Markets • Smart energy • Cellular telephone infrastructure and handsets • Wireless local area networks (WLAN) • Automotive • Remote meter reading for the Smart Grid • Test and measurement • Military communications • Cable television (CATV) PIN, Limiter, Schottky, Varactor Diodes Select diodes available from stock for prototype or high-volume production Skyworks Solutions offers a select group of diodes from our diverse diode offering in stock and ready for immediate design into your demanding applications. Select diodes include the most popular PIN, limiter, Schottky, and tuning varactor diodes, readily available to ship in 3k reels from stock. These devices provide excellent performance and even better value for applications including smart energy, multiswitches, wireless local area networks (WLAN), cellular telephone networks, cable television (CATV), automotive, test and measurement equipment, land mobile radio, and more. PIN Diodes for Switch and Attenuator Applications Part Number • Point-to-point microwave radios Switching PIN Diodes • Land mobile radio systems • Wireless microwave access (WiMAX) • Passive optical networks (PON) Features Markets SMP1345-040LF High isolation, fast switching WLAN, infrastructure, general SMP1320-040LF Fast switching, high isolation, low insertion loss WLAN, infrastructure, general SMP1352-079LF Large signal Infrastructure, general SMP1302-085LF High power (50 W) handling, shunt Land mobile radio, LTE base station, and more SMP1325-087LF High Power (35 W) handling, series Land mobile radio, LTE base station, and more SMP1307-004LF Low distortion / high IP3, dual CATV, PON, base station, and more SMP1307-027LF Low distortion / high IP3, quad CATV, PON, base station, and more Attenuator PIN Diodes Limiter Diodes for Receiver Protection Applications Part Number Features Markets SMP1330-005LF Clean-up limiter, +30 dBm input power, +13 dBm flat leakage power, up to 2.5 GHz Land mobile radio, military, infrastructure, and more SMP1330-085LF Low loss, high power, +30 dBm input power, +13 dBm flat leakage power, up to 4 GHz Land mobile radio, military, infrastructure, and more CLA4603-085LF Medium power, low loss, +33 dBm input power, +13 dBm flat leakage power, up to 10 GHz Land mobile radio, military, infrastructure, and more CLA4606-085LF Medium power, low loss, +35 dBm input power, +18 dBm flat leakage power, up to 10 GHz Land mobile radio, military, infrastructure, and more CLA4609-086LF Course limiter, high power handling, +43 dBm input power, +41 dBm flat leakage power, up to 6 GHz Land mobile radio, military, infrastructure, and more BUY NOW Innovation to GoTM New! Free Designer Kits Select products and sample/designer kits available for purchase online. www.skyworksinc.com Schottky Diodes for Detector and Mixer Applications Part Number Features Markets Detector Diodes SMS7621-060 Excellent sensitivity, low capacitance, 0201 WLAN, military, infrastructure, and more SMS7621-040LF Excellent sensitivity, low capacitance, 0402 WLAN, military, infrastructure, and more SMS7621-005LF Excellent sensitivity, low capacitance, series pair Infrastructure, smart energy, infrastructure, and more SMS7630-061 Best sensitivity, zero bias, 0201 WLAN, military, infrastructure, and more SMS7630-040LF Best sensitivity, zero bias, 0402 WLAN, military, infrastructure, and more SMS3922-079LF Medium barrier, high breakdown voltage Infrastructure and more Tuning Varactor Diodes for VCO, Voltage Tuned Filters, and Phase Shifter Applications Part Number Features Markets Hyperabrupt Diodes SMV1234-040LF Low capacitance (6.5 pF @1 V, 2 pF @ 6 V), low resistance (0.8 Ω) Automotive, smart energy, WLAN, test and measurement, infrastructure, and more SMV1232-040LF High capacitance ratio at low reverse voltage: CT1/CT3 = 1.7 typical Automotive, smart energy, WLAN, test and measurement, infrastructure, and more SMV1247-040LF Low capacitance (7 pF @ 0.3 V, 0.7 pF @ 4.7 V), high Q (1500) Automotive, smart energy, WLAN, test and measurement, infrastructure, and more SMV1249-079LF Medium capacitance (31 pF @ 0.3 V, 2.6 pF @ 4.7 V) Automotive, smart energy, WLAN, test and measurement, infrastructure, and more SMV1255-079LF High capacitance (64 pF @ 0.3 V, 5.2 pF@ 4.7 V) Automotive, smart energy, WLAN, test and measurement, infrastructure, and more SMV1405-040LF Ultra high Q (3200) Automotive, smart energy, WLAN, test and measurement, infrastructure, and more SMV1413-079LF Low resistance, high Q Automotive, smart energy, WLAN, test and measurement, infrastructure, and more Abrupt Diodes PIN Diodes L1 VTUNE Features • Low capacitance for high isolation • Low resistance • Low distortion R2 C1 RF R1 PIN diodes are three layer diodes, comprised of a heavily doped anode (the “P” layer) and a heavily doped cathode (the “N” layer) separated by a virtually undoped intrinsic layer (the “I” layer). Under forward bias, charge carriers from the P and the N layers are forced into the I layer, which reduces its RF impedance. When a reverse bias voltage is applied across the PIN diodes, all free charge carriers are removed from the I layer, thereby causing its RF impedance to increase. This variable RF impedance versus DC or low frequency bias signal allows the diode to be used in RF switching circuits, in which the PIN diode is either heavily forward-biased or reverse biased, or in RF attenuation circuits, in which case the PIN diode is utilized as a continuously-variable RF resistance by controlling the magnitude of the DC bias current through the diode. RF Common L1 C5 RF Skyworks select PIN diodes are some of the most widely used PIN diodes in the world, for applications which range from RF switching in satellite television receiver low noise block converters (LNB) to automotive remote garage door openers to cable television automatic level controls. ICTRL1 C6 C8 R6 SMP1307-027LF R7 C7 C2 R3 R4 R8 C4 R5 VREF C9 Wide Bandwidth PIN Diode Variable Attenuator Bias 1 Bias 1 RF Bypass DC Block RF Bypass ANT RF Choke RF Choke DC Block Tx Rx DC Block DC Block SMP1302-085LF SMP1302-085LF High Power SPDT PIN Switch ICTRL2 L3 C2 C1 C3 J1 J2 D1 SMP1345-040LF D2 L2 SMP1345-040LF Wide Bandwidth Single Pole Double Throw Switch PIN Diodes for Switch and Attenuator Applications Part Number Product Description Key Features Package (mm) SMP1345-040LF High isolation, fast switching PIN diode Very low capacitance (0.14 pF), isolation 40 dB 0402 1.0 x 0.60 x 0.46 SMP1320-040LF Fast switching / high isolation, low insertion loss PIN diode Low capacitance, low series resistance, small footprint 0402 1.0 x 0.60 x 0.46 SMP1352-079LF Large signal switching PIN diode Low capacitance, SC-79 SC-79 1.6 x 0.8 x 0.6 SMP1302-085LF High power shunt PIN diode Power handling to 50 W CW QFN 2 x 2 x 0.9 SMP1325-087LF High power series PIN diode Power handling to 34 W CW QFN 2 x 2 x 0.9 SMP1307-004LF Low distortion / high IP3 attenuator PIN diode Low distortion common cathode configuration SOT-23 2.37 x 2.92 x 1.0 SMP1307-027LF Low distortion / high IP3 attenuator PIN diode Low distortion, (4 diode) Pi configuration SOT-5 2.8 x 2.9 x 1.8 Skyworks Green™ products are compliant to all applicable materials legislation and are halogen-free. For additional information, refer to Skyworks Definition of Green™, document number SQ04-0074. Receiver Protection Limiter Diodes Limiter Output Skyworks’ series of silicon limiter diode chips provides passive receiver protection over a wide range of frequencies from 100 MHz to beyond 30 GHz. These devices utilize Skyworks well established silicon technology for high resistivity and tightly controlled thin basewidth PIN limiter diodes. Limiter circuits employing these devices perform with strong limiting action and low loss. The receiver protector function is performed by a specially processed PIN diode, known as a limiter diode. The PIN limiter diode can be described as an incident-powercontrolled, variable resistor. In the case when no large input signal is present, the impedance of the limiter diode is at its maximum, thereby producing minimum insertion loss, typically less than 0.5 dB. The presence of a large input signal temporarily forces the impedance of the diode to a much lower value, producing an impedance mismatch which reflects the majority of the input signal power back towards its source. The input power level at which the limiter diode’s impedance starts to decrease in response to a large input signal amplitude is primarily determined by the diode’s I layer thickness. The diodes which “turn on” at the lowest signal levels have the thinnest I layers. Output Power (dBm) 30 Features • High power, mid-range cleanup designs • Tight control of basewidth Pin-IL Limiting Operation Low Insertion Loss Operation 20 1 dB 10 0 Threshold Level -10 -10 0 10 20 30 Input Power (dBm) Output Power vs. Input Power for Single-Stage Limiter DC Block DC Block Input Output RF Choke Limiter PIN Typical Single-Stage Limiter Circuit Input λ 4 DC Block “Coarse” Limiter PIN DC Block RF Choke Output “Cleanup” Limiter PIN Multistage Limiter Circuit Limiter Diodes for Receiver Protection Part Number Product Description Key Features Package (mm) SMP1330-005LF Clean-up limiter, high power handling +30 dBm input power, +13 dBm flat leakage power, < 2.5 GHz SMP1330-085LF Low loss, high power, high power handling +30 dBm input power, +13 dBm flat leakage power, < 4 GHz QFN 2 x 2 x 0.9 CLA4603-085LF Medium power, low loss, high power handling +33 dBm input power, +13 dBm flat leakage power, < 10 GHz QFN 2 x 2 x 0.9 CLA4606-085LF Medium power, low loss, high power handling +35 dBm input power, +18 dBm flat leakage power, < 10 GHz QFN 2 x 2 x 0.9 CLA4609-086LF Course limiter, high power handling +43 dBm input power, +41 dBm flat leakage power, < 6 GHz QFN 2 x 2 x 0.9 SOT-23 2.37 x 2.92 x 1.0 Skyworks Green™ products are compliant to all applicable materials legislation and are halogen-free. For additional information, refer to Skyworks Definition of Green™, document number SQ04-0074. Tuning Varactor Diodes Features • Large available change in capacitance for wide bandwidth • Low resistance for low loss Skyworks series of select silicon tuning varactor diodes are used as the electrical tuning elements in voltage controlled oscillators (VCOs), voltage variable analog phase shifters and voltage tuned filters (VTFs). This family of diodes includes abrupt junction tuning varactors, useful for low loss, narrow band circuits, and hyperabrupt junction varactors, useful for wide bandwidth VCOs and VTFs and wide phase range variable phase shifters. Tuning varactors are pn junction diodes. The depletion region that forms at the junction of the diode acts as a nearly-ideal insulator, which separates the highly-doped anode from the cathode layer, thus forming a parallel plate capacitor. The thickness of the depletion layer can be increased by applying a reverse bias voltage to the diode. The cathode layer’s doping profile is very carefully designed to produce a tightly-controlled capacitance versus reverse bias voltage performance characteristic. The cathode layer of an abrupt junction diode has uniform dopant concentration throughout its thickness, which results in a low series resistance and moderately large change in capacitance versus bias voltage. By contrast, the doping concentration of cathode layer of hyperabrupt varactor diode is designed to change by several orders of magnitude, typically over the depth of a few microns. This non-constant dopant concentration versus depth of the hyperabrupt diode’s cathode layer produces a much larger available change in capacitance versus reverse voltage, necessary for wide bandwidth or phase shift range applications. RF Input RF Output Varactor VCC Varactor Common Cathode Pair VR RF Choke Varactor VCONTROL Variable Phase Shifter C2 VCONTROL L RF Input Typical Voltage Controlled Oscillator with a Common Cathode Pair of Tuning Varactors RF Output Resonators Voltage Tuned Filter Tuning Varactor Diodes for VCO, Voltage Tuned Filters, and Phase Shifter Applications Key Feature Package (mm) SMV1234-040LF Part Number Low capacitance tuning varactor diode Product Description Low capacitance (6.3 pF @ 1 V, 2 pF @ 6 V), low resistance (0.8 Ω) hyperabrupt 0402 1.0 x 0.60 x 0.46 SMV1232-040LF Wide band width tuning varactor diode High capacitance ratio at low reverse voltage: CT1/CT3 = 1.7 typical 0402 1.0 x 0.60 x 0.46 SMV1247-040LF Low capacitance and high Q tuning varactor diode Low capacitance (7 pF @ 0.3 V, 0.7 pF @ 4.7 V), high Q (1500) hyperabrupt 0402 1.0 x 0.60 x 0.46 SMV1249-079LF Medium capacitance and wide tuning range diode Medium capacitance (31 pF @ 0.3 V, 2.6 pF @ 4.7 V) hyperabrupt SC-79 1.6 x 0.8 x 0.6 SMV1255-079LF High capacitance and wide tuning range diode High capacitance (64 pF @ 0.3 V, 5.2 pF @ 4.7 V) hyperabrupt SC-79 1.6 x 0.8 x 0.6 SMV1405-040LF Ultra high Q (3200) varactor for filter and VCO Highest VB: 1.84 pF @ 1 V, 0.63 pF @ 30 V 0 402 1.0 x 0.60 x 0.46 SMV1413-079LF Low resistance and high Q abrupt tuning diode Low resistance (0.35 Ω), high Q (2400) and low capacitance (6.4 pF @ 1 V, 1.75 pF @ 30 V) SC-79 1.6 x 0.8 x 0.6 Skyworks Green™ products are compliant to all applicable materials legislation and are halogen-free. For additional information, refer to Skyworks Definition of Green™, document number SQ04-0074. Schottky Diodes Features • Low capacitance for high frequency operation • Excellent sensitivity • High reverse breakdown voltage Skyworks series of select silicon Schottky diodes are optimized for use as detector and mixer diodes at frequencies from below 10 MHz to higher than 20 GHz. This family of products includes medium, low and zero bias detector (ZBD) barrier height Schottky junctions with low junction capacitance and low series resistance. Schottky junctions are formed by depositing specific metals on either n-type-doped silicon (low or medium barrier height) or on p-type-doped silicon (ZBD barrier height). The characteristics of the diode are determined by the type of metal deposited on the semiconductor material as well as the type of dopant in the semiconductor layer, among other parameters. Schottky Detector Diode RF Input RF Choke Filter Capacitor Detected Output Filter Resistor Single Schottky Diode Detector Schottky Diodes for Detector and Mixer Applications Part Number Product Description Key Features Package (mm) SMS7621-060 Mixer applications up to 100 GHz and detector applications up to 40 GHz Low barrier height, low inductance 0.15 nH, 0201 footprint 0201 0.60 x 0.30 x 0.27 SMS7621-040LF Detector Schottky diode Low barrier height and low capacitance 0402 1.0 x 0.60 x 0.46 SMS7621-005LF Series pair detector Schottky diodes Low barrier height and low capacitance SOT-23 2.37 x 2.92 x 1.0 SMS7630-061 Detector applications up to 40 GHz Lowest barrier height, low inductance 0.15 nH, 0201 footprint 0201 0.60 x 0.30 x 0.27 SMS7630-040LF Zero biased detector Schottky diode Lowest barrier height for best sensitivity 0402 1.0 x 0.60 x 0.46 SMS3922-079LF Medium barrier detector Schottky diode Medium barrier height with high breakdown voltage (>8 volts) SC-79 1.6 x 0.8 x 0.6 Skyworks Green™ products are compliant to all applicable materials legislation and are halogen-free. For additional information, refer to Skyworks Definition of Green™, document number SQ04-0074. Green Initiative™ Through our Green Initiative,™ we are committed to manufacturing products that comply with global government directives and industry requirements. Skyworks is continuously innovating RF, analog and mixed-signal ICs. For the latest product introductions and information about Skyworks, visit our Web site at www.skyworksinc.com For additional information on our broad overall product portfolio, please contact your local sales office or email us at [email protected]. Skyworks Solutions, Inc. 20 Sylvan Road, Woburn, MA 01801 USA: (781) 376-3000 • Asia: 886 2 2735 0399 Europe: 33 (0)1 43548540 • Fax: (781) 376-3100 Email: [email protected] • www.skyworksinc.com BRO387-11B 10/11 Printed on Recycled Paper.