Markets • Satellite television receivers low noise block converters (LNB) • Cellular telephone infrastructure and handsets • Wireless local area networks (WLAN) • Automotive • Remote meter reading for the Smart Grid • Test and measurement • Military communications PIN, Schottky, Varactor Diodes Select diodes available from stock for prototype or high volume production Skyworks Solutions offers a select group of diodes from our diverse diode offering in stock and ready for immediate design into your demanding applications. Select diodes include the most popular PIN, Schottky and tuning varactor diodes, readily available to ship in 3k reels from stock. These devices provide excellent performance and even better value for applications including low noise block converters (LNB), multiswitches, wireless local area networks (WLAN), cellular telephone networks, cable television (CATV), automotive, test and measurement equipment, land mobile radio and more. PIN Diodes for Switch and Attenuator Applications Features Markets Switch PIN Diodes • Cable television (CATV) SMP1345-040LF High isolation General SMP1340-079LF Fast switching General • Point-to-point microwave radios SMP1321-005LF High isolation LNB multiswitch and more SMP1302-085LF High power handling Land mobile radio, WiMAX, more Low distortion, 4 PIN diode configuration CATV, PON and more • Land mobile radio systems • Wireless microwave access (WiMAX) • Passive optical networks (PON) Attenuator PIN Diode SMP1307-027LF Schottky Diodes for Detector and Mixer Applications Detector Diodes Features Markets SMS7630-079LF Lowest barrier height for best sensitivity WLAN and more SMS7621-079LF Excellent sensitivity and low capacitance General SMS7621-006LF Series pair LNB and more SMS3922-079LF Low barrier height with high breakdown voltage General SMS3923-011LF Medium barrier height General Tuning Varactor Diodes for VCO, Voltage Tuned Filters and Phase Shifter Applications Features Markets Hyperabrupt Diodes SMV1234-011LF Low capacitance 6.3 pF @ 1 V, 2 pF @ 6 V, low resistance 0.8 Ω General SMV1247-079LF Low capacitance 7 pF @ 0.3 V, 0.7 pF @ 4.7 V, high Q 1500 General SMV1249-079LF Medium capacitance 31 pF @ 0.3 V, 2.6 pF @ 4.7 V General SMV1255-079LF High capacitance 64 pF @ 0.3 V, 5.2 pF @ 4.7 V General Low resistance 0.35 Ω, high Q 2400 & low capacitance 6.4 pF @ 1 V, 1.75 pF @ 30 V General Abrupt Diode SMV1413-079LF BUY NOW Innovation to GoTM New! Free Designer Kits Select products and sample/designer kits available for purchase online. www.skyworksinc.com PIN Diodes L1 VTUNE Features • Low capacitance for high isolation • Low resistance • Low distortion R2 C1 RF R1 PIN diodes are three layer diodes, comprised of a heavily doped anode (the “P” layer) and a heavily doped cathode (the “N” layer) separated by a virtually undoped intrinsic layer (the “I” layer). Under forward bias, charge carriers from the P and the N layers are forced into the I layer, which reduces its RF impedance. When a reverse bias voltage is applied across the PIN diodes, all free charge carriers are removed from the I layer, thereby causing its RF impedance to increase. This variable RF impedance versus DC or low frequency bias signal allows the diode to be used in RF switching circuits, in which the PIN diode is either heavily forward-biased or reverse biased, or in RF attenuation circuits, in which case the PIN diode is utilized as a continuously-variable RF resistance by controlling the magnitude of the DC bias current through the diode. RF Common L1 C5 RF Skyworks select PIN diodes are some of the most widely used PIN diodes in the world, for applications which range from RF switching in satellite television receiver low noise block converters (LNB) to automotive remote garage door openers to cable television automatic level controls. ICTRL1 C6 C8 R6 SMP1307-027LF R7 C7 C2 R3 R4 R8 C4 R5 VREF C9 Wide Bandwidth PIN Diode Variable Attenuator Bias 1 Bias 1 RF Bypass DC Block RF Bypass ANT RF Choke RF Choke DC Block Tx Rx DC Block DC Block SMP1302-085LF SMP1302-085LF High Power SPDT PIN Switch ICTRL2 L3 C2 C1 C3 J1 J2 D1 SMP1345-040LF SMP1345-079LF D2 L2 SMP1345-040LF SMP1345-079LF Wide Bandwidth Single Pole Double Throw Switch PIN Diodes for Switch and Attenuator Applications Product Description Key Features Package (mm) Part Number High isolation switching PIN diode Very low capacitance 0.14 pF, isolation 40 dB 0402 1 x 0.6 x 0.46 SMP1345-040LF Fast switching/high isolation PIN diode Low capacitance, low series resistance SC-79 1.6 x 0.8 x 0.6 SMP1340-079LF High isolation (LNB/multiswitch) PIN diode Low capacitance, series pair SOT-23 2.37 x 2.92 x 1.0 SMP1321-005LF High power shunt PIN diode Power handling to 50 W CW QFN 2 x 2 x 0.9 SMP1302-085LF Low distortion/high IP3 attenuator PIN diode Low distortion, 4 PIN diode attenuator SOT-5 2.8 x 2.9 x 1.8 SMP1307-027LF Tuning Varactor Diodes Features • Large available change in capacitance for wide bandwidth • Low resistance for low loss Skyworks series of select silicon tuning varactor diodes are used as the electrical tuning elements in voltage controlled oscillators (VCOs), voltage variable analog phase shifters and voltage tuned filters (VTFs). This family of diodes includes abrupt junction tuning varactors, useful for low loss, narrow band circuits, and hyperabrupt junction varactors, useful for wide bandwidth VCOs and VTFs and wide phase range variable phase shifters. Tuning varactors are pn junction diodes. The depletion region that forms at the junction of the diode acts as a nearly-ideal insulator, which separates the highly-doped anode from the cathode layer, thus forming a parallel plate capacitor. The thickness of the depletion layer can be increased by applying a reverse bias voltage to the diode. VR RF Input RF Output VCC Varactor Common Cathode Pair RF Choke The cathode layer’s doping profile is very carefully designed to produce a tightly-controlled capacitance versus reverse bias voltage performance characteristic. The cathode layer of an abrupt junction diode has uniform dopant concentration throughout its thickness, which results in a low series resistance and moderately large change in capacitance versus bias voltage. By contrast, the doping concentration of cathode layer of hyperabrupt varactor diode is designed to change by several orders of magnitude, typically over the depth of a few microns. This non-constant dopant concentration versus depth of the hyperabrupt diode’s cathode layer produces a much larger available change in capacitance versus reverse voltage, necessary for wide bandwidth or phase shift range applications. Varactor Varactor VCONTROL C2 Variable Phase Shifter L Typical Voltage Controlled Oscillator with a Common Cathode Pair of Tuning Varactors VCONTROL RF Input RF Output Resonators Voltage Tuned Filter Tuning Varactor Diodes for VCO, Voltage Tuned Filters and Phase Shifter Applications Product Description Key Features Package (mm) Part Number Low capacitance tuning varactor diode Low capacitance 6.3 pF @ 1 V, 2 pF @ 6 V, low resistance 0.8 Ω SMV1234-011LF SOD-323 2.52 x 1.25 x 1.04 Low capacitance & high Q tuning varactor diode Low capacitance 7 pF @ 0.3 V, 0.7 pF @ 4.7 V, high Q 1500 SC-79 1.6 x 1.8 x 0.6 SMV1247-079LF Medium capacitance & wide tuning range diode Medium capacitance 31 pF @ 0.3 V, 2.6 pF @ 4.7 V SC-79 1.6 x 1.8 x 0.6 SMV1249-079LF High capacitance & wide tuning range diode High capacitance 64 pF @ 0.3 V, 5.2 pF @ 4.7 V SC-79 1.6 x 1.8 x 0.6 SMV1255-079LF Low resistance & high Q abrupt tuning diode Low resistance 0.35 Ω, high Q 2400 & low capacitance 6.4 pF. @ 1 V, 1.75 pF @ 30 V SC-79 1.6 x 1.8 x 0.6 SMV1413-079LF Schottky Diodes Features • Low capacitance for high frequency operation • Excellent sensitivity • High reverse breakdown voltage Skyworks series of select silicon Schottky diodes are optimized for use as detector and mixer diodes at frequencies from below 10 MHz to higher than 20 GHz. This family of products includes medium, low and zero bias detector (ZBD) barrier height Schottky junctions with low junction capacitance and low series resistance. Schottky junctions are formed by depositing specific metals on either n-type-doped silicon (low or medium barrier height) or on p-type-doped silicon (ZBD barrier height). The characteristics of the diode are determined by the type of metal deposited on the semiconductor material as well as the type of dopant in the semiconductor layer, among other parameters. Schottky Detector Diode Detected Output RF Input RF choke Filter Capacitor Filter Resistor Single Schottky Diode Detector Schottky Diodes for Detector and Mixer Applications Product Description Key Features Package (mm) Part Number Zero biased detector Schottky diode Lowest barrier height for best sensitivity SC-79 1.6 x 1.8 x 0.6 SMS7630-079LF Detector Schottky diode Low barrier height and low capacitance SC-79 1.6 x 1.8 x 0.6 SMS7621-079LF Series pair detector Schottky diode Low barrier height and low capacitance, for voltage doubler detectors SOT-23 2.37 x 2.92 x 1.0 SMS7621-006LF Low barrier detector Schottky diode Low barrier height with breakdown voltage >8 V SC-79 1.6 x 1.8 x 0.6 SMS3922-079LF Detector or mixer Schottky diode Medium barrier height with voltage breakdown >20 V SOT-23 2.37 x 2.92 x 1.0 SMS3923-011LF Green Initiative™ Through our Green Initiative,™ we are committed to manufacturing products that comply with global government directives and industry requirements. Skyworks is continuously innovating RF, analog and mixed-signal ICs. For the latest product introductions and information about Skyworks, visit our Web site at www.skyworksinc.com For additional information on our broad overall product portfolio, please contact your local sales office or email us at [email protected]. Skyworks Solutions, Inc. 20 Sylvan Road, Woburn, MA 01801 USA: (781) 376-3000 • Asia: 886 2 2735 0399 x 990 Europe: 33 (0)1 41443660 • Fax: (781) 376-3100 Email: [email protected] • www.skyworksinc.com BRO387-10A Printed on Recycled Paper.