RF1001T2D : Diodes

Fast recovery diodes
Datasheet
RF1001T2D
Applications
General rectification
Dimensions (Unit : mm)
Structure
4.5±0.3
0.1
Features
1) Cathode common type.
(TO-220)
2) Ultra Low VF
3) Very fast recovery
4) Low switching loss
8.0
13.5MIN
5.0±0.2
8.0±0.2
12.0±0.2
15.0±0.4
0.2
(1) (2) (3)
1.2
Construction
Silicon epitaxial planar
2.8±0.2
0.1
10.0±0.3
0.1
1.3
0.8
0.7±0.1
0.05
(1) (2) (3)
2.6±0.5
ROHM : TO220FN
Manufacture Date
Absolute maximum ratings (Ta=25C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current (*1)
Forward current surge peak (60Hz/1cyc)
Junction temperature
Storage temoerature
Limits
Symbol
200
VRM
200
VR
10
Io
80
IFSM
150
Tj
55 to 150
Tstg
(*1)Business frequencies, Rating of R-load, Tc=126 C. 1/2 Io per diode
Electrical characteristic (Ta=25C)
Parameter
Forward voltage
Reverse current
Reverse recovery time
Thermal impedance
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© 2012 ROHM Co., Ltd. All rights reserved.
Unit
V
V
A
A
C
C
Symbol
VF
Min.
-
Typ.
0.87
Max.
0.93
Unit
V
IR
-
0.01
10
μA
trr
-
15
-
30
2.5
C/W
Rth(j-c)
1/4
ns
Conditions
IF=5A
VR=200V
IF=0.5A, IR=1A, Irr=0.25*IR
JUNCTION TO CASE
2012.12 - Rev.E
Data Sheet
RF1001T2D
Electrical characteristics curves
10
10000
Ta=150C
Ta=150C
Ta=125C
Ta=25C
1000
REVERSE CURRENT:IR(nA)
FORWARD CURRENT:IF(A)
1
Ta=125C
Ta=-25C
Ta=75C
0.1
0.01
Ta=75C
100
Ta=25C
10
Ta=-25C
1
0.001
0.1
0 100 200 300 400 500 600 700 800 900 100011001200
0
50
100
150
200
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
1000
890
FORWARD VOLTAGE:VF(mV)
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
f=1MHz
100
10
Ta=25C
IF=5A
n=30pcs
880
870
860
850
AVE:857.4mV
840
1
0
5
10
15
20
25
30
VF DISPERSION MAP
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
100
200
Ta=25C
VR=200V
n=30pcs
90
190
70
60
50
40
AVE:10.7nA
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE CURRENT:IR(nA)
80
30
Ta=25C
f=1MHz
VR=0V
n=10pcs
195
185
180
175
170
165
20
160
10
155
0
150
Ct DISPERSION MAP
IR DISPERSION MAP
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© 2012 ROHM Co., Ltd. All rights reserved.
AVE:174.9pF
2/4
2012.12 - Rev.E
Data Sheet
RF1001T2D
Electrical characteristics curves
300
REVERSE RECOVERY TIME:trr(ns)
30
PEAK SURGE
FORWARD CURRENT:IFSM(A)
250
200
150
100
50
Ta=25C
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
25
20
15
10
AVE:14.5ns
5
AVE:167.0A
0
0
IFSM DISPERSION MAP
trr DISPERSION MAP
1000
1000
t
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
Ifsm
100
10
Ifsm
8.3ms
8.3ms
100
1cyc
10
1
0.1
1
10
1
100
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
20
100
IF=5A
IM=100mA
DC
15
10
1ms
Rth(j-a)
time
300s
Rth(j-c)
1
FORWARD POWER
DISSIPATION:Pf(W)
TRANSIENT
THAERMAL IMPEDANCE:Rth (C/W)
Mounted on epoxy board
D=1/2
Sin(θ=180)
10
5
0.1
0.0001
0
0.01
1
0
100
10
15
20
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
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© 2012 ROHM Co., Ltd. All rights reserved.
5
3/4
2012.12 - Rev.E
30
25
0A
Io
0V
VR
t
20
Tj=150C
T
DC
15
D=t/T
VR=100V
D=1/2
10
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
30
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Data Sheet
RF1001T2D
25
0A
Io
0V
VR
t
DC
20
15
D=t/T
T
Tj=150C
D=1/2
10
Sin(=180)
Sin(=180)
5
5
0
0
0
25
50
75
100
125
150
0
AMBIENT TEMPERATURE:Ta(C)
Derating Curve"(Io-Ta)
25
50
75
100
125
150
CASE TEMPARATURE:Tc(C)
Derating Curve"(Io-Tc)
30
No break at 30kV
No break at 30kV
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
25
20
15
10
5
C=200pF
R=0
C=100pF
R=1.5k
0
ESD DISPERSION MAP
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© 2012 ROHM Co., Ltd. All rights reserved.
4/4
2012.12 - Rev.E
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications :
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
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4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
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this document.
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R1102A