RFN1L6S : Diode

Super Fast Recovery Diode
Data Sheet
RFN1L6S
lSeries
lDimensions (Unit : mm)
lLand Size Figure (Unit : mm)
Standard Fast Recovery
2.0
2.0
6
8
General rectification
4.2
lApplication
46
1
2
PMDS
lFeatures
Cathode
1) Low forward voltage
2) Low switching loss
lConstruction
lStructure
ROHM : PMDS
JEDEC : SOD-106
1
2
: Manufacture Date
Anode
lTaping Dimensions (Unit : mm)
Silicon epitaxial planar type
2.0±0.05
fφ 1.55±0.05
0.3
12±0.2
5.5±0.05
5.3±0.1
0.05
9.5±0.1
1.75±0.1
4.0±0.1
fφ 1.55
2.9±0.1
4.0±0.1
2.8MAX
lAbsolute Maximum Ratings (Tl= 25°C)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
VRM
Duty≦0.5
600
V
Reverse voltage
VR
Direct voltage
600
V
Average current
Io
Tl=115ºC
0.8
A
IFSM
60Hz half sin wave, Non-repetitive at Tj=25ºC
15
A
Tj
-
150
°C
Tstg
-
-55 to +150
°C
Non-repetitive forward surge current
Operating junction temperature
Storage temperature
On glass epoxy substrate,
60Hz half sin wave , Resistive load
lElectrical Characteristics (Tj= 25°C)
Parameter
Symbol
Conditions
Min.
Forward voltage
VF
IF=0.8A
-
1.15 1.45
V
Reverse current
IR
VR=600V
-
0.01
1
mA
Reverse recovery time
trr
IF=0.5A, IR=1A, Irr=0.25×IR
-
25
35
ns
Rth(j-l)
Junction to Lead
-
-
23
°C/W
Thermal resistance
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1/4
Typ. Max. Unit
2015.07 - Rev.A
Data Sheet
RFN1L6S
lElectrical Characteristic Curves
10000
REVERSE CURRENT : IR(nA)
FORWARD CURRENT : IF(A)
10
1
0.1
Tj = 150°C
Tj = 125°C
0.01
Tj = 75°C
Tj = 150°C
Tj = 125°C
1000
Tj = 75°C
100
Tj = 25°C
10
Tj = 25°C
0.001
1
0
500
1000
1500
2000
0
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
200
300
400
500
600
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
100
100
f = 1MHz
Ta = 25°C
PEAK SURGE
FORWARD CURRENT : IFSM(A)
CAPACITANCE BETWEEN
TERMINALS : Ct(pF)
100
10
IFSM
8.3ms
8.3ms
1cyc.
10
Tj = 25°C
1
1
0
5
10
15
20
25
1
30
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
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© 2015 ROHM Co., Ltd. All rights reserved.
10
2/4
2015.07 - Rev.A
Data Sheet
RFN1L6S
lElectrical characteristic curves
1000
TRANSIENT
THERMAL IMPEDANCE : Rth (°C/W)
PEAK SURGE
FORWARD CURRENT : IFSM(A)
100
IFSM
time
10
Tj = 25°C
1
1
10
Rth(j-a)
100
10
Rth(j-l)
1
0.1
0.001
100
0.01
TIME : t(ms)
IFSM-t CHARACTERISTICS
0.1
1
10
100
1000
TIME : t(s)
Rth-t CHARACTERISTICS
Io
0A
0V
0A
0V
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
T
D = 0.5
1
1.4
VR
t
D.C.
D=t/T
VR=VRmax
Tj=150°C
half sin wave
0.8
0.6
D = 0.2
0.4
D = 0.1
0.2
T
D.C.
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
1.2
VR
t
Io
D=t/T
VR=VRmax
Tj=150°C
1.2
1.0
D = 0.5
0.8
half sin wave
0.6
D = 0.2
0.4
D = 0.1
0.2
0.0
0
0
30
60
90
120
0
150
AMBIENT TEMPERATURE : Ta(°C)
DERATING CURVE (Io-Ta)
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© 2015 ROHM Co., Ltd. All rights reserved.
30
60
90
120
150
LEAD TEMPERATURE : Tl(°C)
DERATING CURVE (Io-Tl)
3/4
2015.07 - Rev.A
Data Sheet
RFN1L6S
lElectrical characteristic curves
2.5
D.C.
FORWARD POWER
DISSIPATION : Pf (W)
2
D = 0.5
1.5
half sin wave
D = 0.2
1
D = 0.1
0.5
Tj = 150°C
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
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© 2015 ROHM Co., Ltd. All rights reserved.
4/4
2015.07 - Rev.A
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications :
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in
this document.
7) The Products specified in this document are not designed to be radiation tolerant.
8) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, servers, solar cells, and power transmission systems.
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equipment, nuclear power control systems, and submarine repeaters.
10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
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document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
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such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
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R1102A