RFN5BM3S : Diodes

Super Fast Recovery Diode
Datasheet
RFN5BM3S
Serise
Dimensions (Unit : mm)
Land Size Figure (Unit : mm)
6.0
Application
1.6
General rectification
1.6
1
3.0 2.0
6.0
Standard Fast Recovery
2.3 2.3
TO-252
Features
Cathode
1) Low switching loss
2) High current overload capacity
Structure
ROHM : TO-252
JEITA : SC-63
: Manufacture Date
1
Construction
Open
Taping Dimensions (Unit : mm)
Silicon epitaxial planar type
2.0±0.05
φ1.55±0.1
1.550.1
0
8.0±0.1
0.4±0.1
φ3.0±0.1
3.00.1
8.0±0.1
10.1±0.1
10.1±0.1
0～0.5
6.8±0.1
13.5±0.2
TL
16.0±0.2
7.5±0.05
2.5±0.1
4.0±0.1
Anode
2.7±0.2
Absolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
VRM
Duty≦0.5
350
V
Reverse voltage
VR
Direct voltage
350
V
Average rectified foward current
Io
60Hz half sin wave , Resistive load Tc=95°C
5
A
IFSM
60Hz half sin wave ,Non-repetitive at Tj=25°C
50
A
Tj
-
150
°C
Tstg
-
55 to 150
°C
Forward current surge peak
Operating junction temperature
Storage temperature
Electrical Characteristics (Tj = 25°C)
Parameter
Symbol
Conditions
Min.
Forward voltage
VF
IF=5A
-
1.1
1.5
V
Reverse current
IR
VR=350V
-
0.05
10
A
Reverse recovery time
trr
IF=0.5A, IR=1A, Irr=0.25×IR
-
20
30
ns
Rth(j-c)
Junction to case
-
-
Thermal resistance
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1/4
Typ. Max. Unit
6.0 °C / W
2015.01 - Rev.B
Data Sheet
RFN5BM3S
Electrical characteristic curves
100
100000
REVERSE CURRENT : IR(nA)
FORWARD CURRENT : IF(A)
Tj = 150°C
10
1
Tj = 150°C
Tj = 125°C
0.1
Tj = 75°C
Tj = 125°C
10000
1000
Tj = 75°C
100
Tj = 25°C
10
1
Tj = 25°C
0.1
0.01
0
500
1000
1500
0
2000
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
100
150
200
250
300
350
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
1000
1000
f = 1MHz
Ta = 25°C
PEAK SURGE
FORWARD CURRENT : IFSM(A)
CAPACITANCE BETWEEN
TERMINALS : Ct(pF)
50
100
10
IFSM
8.3ms
8.3ms
1cyc.
100
10
Tj = 25°C
1
1
0
5
10
15
20
25
30
1
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
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10
2/4
2015.01 - Rev.B
Data Sheet
RFN5BM3S
Electrical characteristic curves
1000
TRANSIENT
THERMAL IMPEDANCE : Rth (°C/W)
100
PEAK SURGE
FORWARD CURRENT : IFSM(A)
Tj = 25°C
100
10
IFSM
time
1
1
10
Rth(j-a)
10
Rth(j-c)
1
0.1
0.001
100
0.01
TIME : t(ms)
IFSM-t CHARACTERISTICS
0.1
1
10
100
1000
TIME : t(s)
Rth-t CHARACTERISTICS
Io
0A
VR
D.C.
T
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
D = 0.5
D=t/T
VR=VRmax
Tj=150°C
4.0
half sin wave
3.5
D = 0.2
3.0
2.5
2.0
D = 0.1
1.5
1.0
9
T
D=t/T
VR=VRmax
Tj=150°C
8
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
t
4.5
VR
t
0V
5.0
0V
Io
0A
D.C.
7
D = 0.5
6
5
half sin wave
4
3
D = 0.2
2
D = 0.1
1
0.5
0
0.0
0
30
60
90
120
0
150
AMBIENT TEMPERATURE : Ta(°C)
DERATING CURVE (Io-Ta)
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© 2015 ROHM Co., Ltd. All rights reserved.
30
60
90
120
150
CASE TEMPERATURE : Tc(°C)
DERATING CURVE (Io-Tc)
3/4
2015.01 - Rev.B
Data Sheet
RFN5BM3S
Electrical characteristic curves
14
D.C.
FORWARD POWER
DISSIPATION : Pf (W)
12
D = 0.5
10
half sin wave
8
D = 0.2
6
D = 0.1
4
2
Tj = 150°C
0
0
1
2
3
4
5
6
7
8
9
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
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4/4
2015.01 - Rev.B
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications :
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in
this document.
7) The Products specified in this document are not designed to be radiation tolerant.
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below), please contact and consult with a ROHM representative : transportation equipment (i.e.
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equipment, medical systems, servers, solar cells, and power transmission systems.
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equipment, nuclear power control systems, and submarine repeaters.
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the recommended usage conditions and specifications contained herein.
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shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
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R1102A