EMD12/UMD12N : Transistors

EMD12 / UMD12N
NPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors) Datasheet
lOutline
<For DTr1(NPN)>
Parameter
VCC
IC(MAX.)
R1
R2
Value
EMT6
UMT6
(6)
(6)
(5)
(5)
50V
100mA
47kW
47kW
(4)
(4)
(1)
(1)
(2)
(2)
(3)
(3)
EMD12
(SC-107C)
UMD12N
SOT-353 (SC-88)
<For DTr2(PNP)>
Parameter
Value
VCC
-50V
-100mA
47kW
47kW
IC(MAX.)
R1
R2
lFeatures
lInner circuit
1) Both the DTC144E chip and DTA144E chip
in one package.
2) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit).
3) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
completely eliminating parasitic effects.
4) Only the on/off conditions need to be set for
operation, making the circuit design easy.
5) Lead Free/RoHS Compliant.
OUT
(6)
IN
(5)
R1
R2
DTr1
DTr2
R2
(1)
GND
GND
(4)
R1
(2)
IN
(3)
OUT
lApplication
Inverter circuit, Interface circuit, Driver circuit
lPackaging specifications
Package
Package
size
(mm)
Taping
code
EMD12
EMT6
1616
T2R
180
8
8,000
D12
UMD12N
UMT6
2021
TR
180
8
3,000
D12
Part No.
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1/7
Basic
Reel size Tape width
ordering
(mm)
(mm)
unit (pcs)
Marking
2013.07 - Rev.B
Data Sheet
EMD12 / UMD12N
lAbsolute maximum ratings (Ta = 25C)
Parameter
Symbol
DTr1(NPN)
DTr2(PNP)
Unit
Supply voltage
VCC
50
-50
V
Input voltage
VIN
-10 to +40
-40 to +10
V
Output current
IO
30
-30
mA
IC(MAX.)*1
PD *2
100
-100
mA
*3
mW
Collector current
Power dissipation
Tj
150
°C
Tstg
-55 to +150
°C
Junction temperature
Range of storage temperature
150 (Total)
lElectrical characteristics(Ta = 25°C) <For DTr1(NPN)>
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
VI(off)
VCC = 5V, IO = 100mA
-
-
0.5
VI(on)
VO = 0.3V, IO = 2mA
3.0
-
-
VO(on)
IO / II = 10mA / 0.5mA
-
0.1
0.3
V
VI = 5V
-
-
0.18
mA
IO(off)
VCC = 50V, VI = 0V
-
-
0.5
mA
DC current gain
GI
VO = 5V, IO = 5mA
68
-
-
-
Input resistance
R1
-
32.9
47
61.1
kW
Resistance ratio
R2/R1
-
0.8
1
1.2
-
fT *1
VCE = 10V, IE = -5mA
f = 100MHz
-
250
-
MHz
Unit
Input voltage
Output voltage
Input current
Output current
Transition frequency
II
V
lElectrical characteristics(Ta = 25°C) <For DTr2(PNP)>
Parameter
Symbol
Conditions
Min.
Typ.
Max.
VI(off)
VCC = -5V, IO = -100mA
-
-
-0.5
VI(on)
VO = -0.3V, IO = -2mA
-3.0
-
-
VO(on)
IO / II = -10mA / -0.5mA
-
-0.1
-0.3
V
VI = -5V
-
-
-0.18
mA
IO(off)
VCC = -50V, VI = 0V
-
-
-0.5
mA
DC current gain
GI
VO = -5V, IO = -5mA
68
-
-
-
Input resistance
R1
-
32.9
47
61.1
kW
Resistance ratio
R2/R1
-
0.8
1
1.2
-
VCE = -10V, IE = 5mA
f = 100MHz
-
250
-
MHz
Input voltage
Output voltage
Input current
Output current
Transition frequency
II
fT
*1
V
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
*3 120mW per element must not be exceeded.
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2/7
2013.07 - Rev.B
Data Sheet
EMD12 / UMD12N
lElectrical characteristic curves (Ta = 25°C) <For DTr1(NPN)>
Fig.2 Output current vs. input voltage
(OFF characteristics)
INPUT VOLTAGE : VI(on) [V]
OUTPUT CURRENT : IO [A]
Fig.1 Input voltage vs. output current
(ON characteristics)
OUTPUT CURRENT : IO [A]
INPUT VOLTAGE : VI(off)[V]
Fig.3 Output current vs. output voltage
Fig.4 DC current gain vs. output current
II=
30
120mA
110mA
100mA
90mA
20
80mA
70mA
60mA
10
50mA
40mA
DC CURRENT GAIN : GI
OUTPUT CURRENT : IO [mA]
Ta=25ºC
30mA
0A
0
0
5
10
OUTPUT CURRENT : IO [A]
OUTPUT VOLTAGE : VO [V]
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3/7
2013.07 - Rev.B
Data Sheet
EMD12 / UMD12N
lElectrical characteristic curves (Ta = 25°C) <For DTr1(NPN)>
OUTPUT VOLTAGE : VO(on) [V]
Fig.5 Output voltage vs. output current
OUTPUT CURRENT : IO [A]
lElectrical characteristic curves (Ta = 25°C) <For DTr2(PNP)>
Fig.7 Output current vs. input voltage
(OFF characteristics)
INPUT VOLTAGE : VI(on) [V]
OUTPUT CURRENT : IO [A]
Fig.6 Input voltage vs. output current
(ON characteristics)
OUTPUT CURRENT : IO [A]
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© 2013 ROHM Co., Ltd. All rights reserved.
INPUT VOLTAGE : VI(off)[V]
4/7
2013.07 - Rev.B
Data Sheet
EMD12 / UMD12N
lElectrical characteristic curves (Ta = 25°C) <For DTr2(PNP)>
Fig.9 DC current gain vs. output current
Fig.8 Output current vs. output voltage
-30
II=
-130mA
-25
-120mA
-110mA
-20
-100mA
-90mA
-80mA
-15
-70mA
-60mA
-10
-50mA
-40mA
-5
DC CURRENT GAIN : GI
OUTPUT CURRENT : IO [mA]
Ta=25ºC
-30mA
0
0A
0
-5
-10
OUTPUT CURRENT : IO [A]
OUTPUT VOLTAGE : VO [V]
OUTPUT VOLTAGE : VO(on) [V]
Fig.10 Output voltage vs. output current
OUTPUT CURRENT : IO [A]
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5/7
2013.07 - Rev.B
Data Sheet
EMD12 / UMD12N
lDimensions (Unit : mm)
D
b
x
c
S A
Lp
Lp
HE
L
E
L
EMT6
A
A1
y S
l1
A
e1
e
S
b2
e
Pattern of terminal position areas
[Not a recommended pattern of soldering pads]
DIM
A
A1
b
c
D
E
e
HE
L
Lp
x
y
DIM
b2
e1
l1
MILIMETERS
MIN
MAX
0.45
0.55
0.00
0.10
0.17
0.27
0.08
0.18
1.50
1.70
1.10
1.30
0.50
1.50
1.70
0.10
0.30
0.35
0.10
0.10
INCHES
MIN
0.018
0.000
0.007
0.003
0.059
0.043
MAX
0.022
0.004
0.011
0.007
0.067
0.051
0.020
0.059
0.004
-
MILIMETERS
MIN
MAX
0.37
1.25
0.45
0.067
0.012
0.014
0.004
0.004
INCHES
MIN
-
MAX
0.015
0.049
-
0.018
Dimension in mm / inches
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6/7
2013.07 - Rev.B
Data Sheet
EMD12 / UMD12N
lDimensions (Unit : mm)
D
A
e
c
x
Lp
L1
A3
S A
e
e1
l1
y S
A1
A
b
HE
Q
E
UMT6
S
b2
Pattern of terminal position areas
[Not a recommended pattern of soldering pads]
DIM
A
A1
A3
b
c
D
E
e
HE
L1
Lp
Q
x
y
DIM
b2
e1
l1
MILIMETERS
MIN
MAX
0.80
1.00
0.00
0.10
0.25
0.15
0.30
0.10
0.20
1.90
2.10
1.15
1.35
0.65
2.00
2.20
0.20
0.50
0.25
0.55
0.10
0.30
0.10
0.10
INCHES
MIN
0.031
0.000
MAX
0.039
0.004
0.010
0.006
0.004
0.075
0.045
0.012
0.008
0.083
0.053
0.026
0.079
0.008
0.010
0.004
-
MILIMETERS
MIN
MAX
0.40
1.55
0.65
0.087
0.020
0.022
0.012
0.004
0.004
INCHES
MIN
-
MAX
0.016
0.061
-
0.026
Dimension in mm / inches
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7/7
2013.07 - Rev.B
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications :
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Therefore, in order to prevent personal injury or fire arising from failure, please take safety
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4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
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examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
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R1102A