EMD12 / UMD12N NPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors) Datasheet lOutline <For DTr1(NPN)> Parameter VCC IC(MAX.) R1 R2 Value EMT6 UMT6 (6) (6) (5) (5) 50V 100mA 47kW 47kW (4) (4) (1) (1) (2) (2) (3) (3) EMD12 (SC-107C) UMD12N SOT-353 (SC-88) <For DTr2(PNP)> Parameter Value VCC -50V -100mA 47kW 47kW IC(MAX.) R1 R2 lFeatures lInner circuit 1) Both the DTC144E chip and DTA144E chip in one package. 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit). 3) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of completely eliminating parasitic effects. 4) Only the on/off conditions need to be set for operation, making the circuit design easy. 5) Lead Free/RoHS Compliant. OUT (6) IN (5) R1 R2 DTr1 DTr2 R2 (1) GND GND (4) R1 (2) IN (3) OUT lApplication Inverter circuit, Interface circuit, Driver circuit lPackaging specifications Package Package size (mm) Taping code EMD12 EMT6 1616 T2R 180 8 8,000 D12 UMD12N UMT6 2021 TR 180 8 3,000 D12 Part No. www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 1/7 Basic Reel size Tape width ordering (mm) (mm) unit (pcs) Marking 2013.07 - Rev.B Data Sheet EMD12 / UMD12N lAbsolute maximum ratings (Ta = 25C) Parameter Symbol DTr1(NPN) DTr2(PNP) Unit Supply voltage VCC 50 -50 V Input voltage VIN -10 to +40 -40 to +10 V Output current IO 30 -30 mA IC(MAX.)*1 PD *2 100 -100 mA *3 mW Collector current Power dissipation Tj 150 °C Tstg -55 to +150 °C Junction temperature Range of storage temperature 150 (Total) lElectrical characteristics(Ta = 25°C) <For DTr1(NPN)> Parameter Symbol Conditions Min. Typ. Max. Unit VI(off) VCC = 5V, IO = 100mA - - 0.5 VI(on) VO = 0.3V, IO = 2mA 3.0 - - VO(on) IO / II = 10mA / 0.5mA - 0.1 0.3 V VI = 5V - - 0.18 mA IO(off) VCC = 50V, VI = 0V - - 0.5 mA DC current gain GI VO = 5V, IO = 5mA 68 - - - Input resistance R1 - 32.9 47 61.1 kW Resistance ratio R2/R1 - 0.8 1 1.2 - fT *1 VCE = 10V, IE = -5mA f = 100MHz - 250 - MHz Unit Input voltage Output voltage Input current Output current Transition frequency II V lElectrical characteristics(Ta = 25°C) <For DTr2(PNP)> Parameter Symbol Conditions Min. Typ. Max. VI(off) VCC = -5V, IO = -100mA - - -0.5 VI(on) VO = -0.3V, IO = -2mA -3.0 - - VO(on) IO / II = -10mA / -0.5mA - -0.1 -0.3 V VI = -5V - - -0.18 mA IO(off) VCC = -50V, VI = 0V - - -0.5 mA DC current gain GI VO = -5V, IO = -5mA 68 - - - Input resistance R1 - 32.9 47 61.1 kW Resistance ratio R2/R1 - 0.8 1 1.2 - VCE = -10V, IE = 5mA f = 100MHz - 250 - MHz Input voltage Output voltage Input current Output current Transition frequency II fT *1 V *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference footprint *3 120mW per element must not be exceeded. www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 2/7 2013.07 - Rev.B Data Sheet EMD12 / UMD12N lElectrical characteristic curves (Ta = 25°C) <For DTr1(NPN)> Fig.2 Output current vs. input voltage (OFF characteristics) INPUT VOLTAGE : VI(on) [V] OUTPUT CURRENT : IO [A] Fig.1 Input voltage vs. output current (ON characteristics) OUTPUT CURRENT : IO [A] INPUT VOLTAGE : VI(off)[V] Fig.3 Output current vs. output voltage Fig.4 DC current gain vs. output current II= 30 120mA 110mA 100mA 90mA 20 80mA 70mA 60mA 10 50mA 40mA DC CURRENT GAIN : GI OUTPUT CURRENT : IO [mA] Ta=25ºC 30mA 0A 0 0 5 10 OUTPUT CURRENT : IO [A] OUTPUT VOLTAGE : VO [V] www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 3/7 2013.07 - Rev.B Data Sheet EMD12 / UMD12N lElectrical characteristic curves (Ta = 25°C) <For DTr1(NPN)> OUTPUT VOLTAGE : VO(on) [V] Fig.5 Output voltage vs. output current OUTPUT CURRENT : IO [A] lElectrical characteristic curves (Ta = 25°C) <For DTr2(PNP)> Fig.7 Output current vs. input voltage (OFF characteristics) INPUT VOLTAGE : VI(on) [V] OUTPUT CURRENT : IO [A] Fig.6 Input voltage vs. output current (ON characteristics) OUTPUT CURRENT : IO [A] www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. INPUT VOLTAGE : VI(off)[V] 4/7 2013.07 - Rev.B Data Sheet EMD12 / UMD12N lElectrical characteristic curves (Ta = 25°C) <For DTr2(PNP)> Fig.9 DC current gain vs. output current Fig.8 Output current vs. output voltage -30 II= -130mA -25 -120mA -110mA -20 -100mA -90mA -80mA -15 -70mA -60mA -10 -50mA -40mA -5 DC CURRENT GAIN : GI OUTPUT CURRENT : IO [mA] Ta=25ºC -30mA 0 0A 0 -5 -10 OUTPUT CURRENT : IO [A] OUTPUT VOLTAGE : VO [V] OUTPUT VOLTAGE : VO(on) [V] Fig.10 Output voltage vs. output current OUTPUT CURRENT : IO [A] www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 5/7 2013.07 - Rev.B Data Sheet EMD12 / UMD12N lDimensions (Unit : mm) D b x c S A Lp Lp HE L E L EMT6 A A1 y S l1 A e1 e S b2 e Pattern of terminal position areas [Not a recommended pattern of soldering pads] DIM A A1 b c D E e HE L Lp x y DIM b2 e1 l1 MILIMETERS MIN MAX 0.45 0.55 0.00 0.10 0.17 0.27 0.08 0.18 1.50 1.70 1.10 1.30 0.50 1.50 1.70 0.10 0.30 0.35 0.10 0.10 INCHES MIN 0.018 0.000 0.007 0.003 0.059 0.043 MAX 0.022 0.004 0.011 0.007 0.067 0.051 0.020 0.059 0.004 - MILIMETERS MIN MAX 0.37 1.25 0.45 0.067 0.012 0.014 0.004 0.004 INCHES MIN - MAX 0.015 0.049 - 0.018 Dimension in mm / inches www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 6/7 2013.07 - Rev.B Data Sheet EMD12 / UMD12N lDimensions (Unit : mm) D A e c x Lp L1 A3 S A e e1 l1 y S A1 A b HE Q E UMT6 S b2 Pattern of terminal position areas [Not a recommended pattern of soldering pads] DIM A A1 A3 b c D E e HE L1 Lp Q x y DIM b2 e1 l1 MILIMETERS MIN MAX 0.80 1.00 0.00 0.10 0.25 0.15 0.30 0.10 0.20 1.90 2.10 1.15 1.35 0.65 2.00 2.20 0.20 0.50 0.25 0.55 0.10 0.30 0.10 0.10 INCHES MIN 0.031 0.000 MAX 0.039 0.004 0.010 0.006 0.004 0.075 0.045 0.012 0.008 0.083 0.053 0.026 0.079 0.008 0.010 0.004 - MILIMETERS MIN MAX 0.40 1.55 0.65 0.087 0.020 0.022 0.012 0.004 0.004 INCHES MIN - MAX 0.016 0.061 - 0.026 Dimension in mm / inches www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 7/7 2013.07 - Rev.B Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications : 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document. 7) The Products specified in this document are not designed to be radiation tolerant. 8) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. 9) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 11) ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 12) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 13) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. 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