EMD30 - Rohm

EMD30
PNP + NPN Complex Digital Transistors (Bias Resistor Built-in Transistors) Datasheet
Outline
<For DTr1(PNP)>
Parameter
Value
VCC
30V
200mA
1k
10k
IC(MAX.)
R1
R2
EMT6
(6)
(5)
(4)
(1)
(2)
(3)
EMD30
(SC-107C)
<For DTr2(NPN)>
Parameter
Value
VCC
50V
100mA
10k
10k
IC(MAX.)
R1
R2
Features
Inner circuit
1) Both the DTB713Z chip and DTC114E chip
in one package.
2) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit).
3) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
completely eliminating parasitic effects.
4) Only the on/off conditions need to be set for
operation, making the circuit design easy.
5) Lead Free/RoHS Compliant.
OUT
(6)
IN
(5)
R1
R2
DTr1
DTr2
R2
(1)
GND
GND
(4)
R1
(2)
IN
(3)
OUT
Application
Inverter circuit, Interface circuit, Driver circuit
Packaging specifications
Part No.
EMD30
Package
Package
size
(mm)
Taping
code
EMT6
1616
T2R
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1/6
Basic
Reel size Tape width
ordering
(mm)
(mm)
unit (pcs)
180
8
8,000
Marking
D30
2013.11 - Rev.C
Data Sheet
EMD30
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
DTr1(PNP)
DTr2(NPN)
Unit
Supply voltage
VCC
30
50
V
Input voltage
VIN
10 to 5
10 to 40
V
Output current
IO

50
mA
IC(MAX.)*1
PD *2
200
100
mA
Collector current
Power dissipation
mW
Tj
150
°C
Tstg
55 to 150
°C
Junction temperature
Range of storage temperature
150 (Total)
*3
Electrical characteristics(Ta = 25°C) <For DTr1(PNP)>
Parameter
Input voltage
Output voltage
Input current
Output current
Symbol
Conditions
Min.
Typ.
Max.
VI(off)
VCC = 5V, IO = 100A
-
-
0.3
VI(on)
VO = 0.3V, IO = 20mA
2.5
-
-
VO(on)
IO / II = 50mA / 2.5mA
-
0.07
0.3
V
VI = 5V
-
-
6.4
mA
VCC = 30V, VI = 0V
-
-
0.5
A
II
IO(off)
Unit
V
DC current gain
GI
VO = 2V, IO = 100mA
140
-
-
-
Input resistance
R1
-
0.7
1
1.3
k
Resistance ratio
R2/R1
-
8
10
12
-
VCE = 10V, IE = 5mA
f = 100MHz
-
260
-
MHz
Min.
Typ.
Max.
Unit
Transition frequency
fT
*1
Electrical characteristics(Ta = 25°C) <For DTr2(NPN)>
Parameter
Symbol
Conditions
VI(off)
VCC = 5V, IO = 100A
-
-
0.5
VI(on)
VO = 0.3V, IO = 2mA
3.0
-
-
VO(on)
IO / II = 10mA / 0.5mA
-
0.1
0.3
V
VI = 5V
-
-
880
A
IO(off)
VCC = 50V, VI = 0V
-
-
0.5
A
DC current gain
GI
VO = 5V, IO = 5mA
30
-
-
-
Input resistance
R1
-
7
10
13
k
Resistance ratio
R2/R1
-
0.8
1.0
1.2
-
fT *1
VCE = 10V, IE = 5mA
f = 100MHz
-
250
-
MHz
Input voltage
Output voltage
Input current
Output current
Transition frequency
II
V
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
*3 120mW per element must not be exceeded.
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2/6
2013.11 - Rev.C
Data Sheet
EMD30
Electrical characteristic curves (Ta = 25°C) <For DTr1(NPN)>
Fig.2 Output current vs. input voltage
(OFF characteristics)
INPUT VOLTAGE : VI(on) [V]
OUTPUT CURRENT : IO [A]
Fig.1 Input voltage vs. output current
(ON characteristics)
OUTPUT CURRENT : IO [A]
INPUT VOLTAGE : VI(off)[V]
Fig.3 Output current vs. output voltage
Fig.4 DC current gain vs. output current
II= 260A
50
220A
40
200A
180A
30
160A
20
140A
120A
10
DC CURRENT GAIN : GI
OUTPUT CURRENT : IO [mA]
240A
Ta=25ºC
100A
0A
0
0
5
10
OUTPUT CURRENT : IO [A]
OUTPUT VOLTAGE : VO [V]
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3/6
2013.11 - Rev.C
Data Sheet
EMD30
Electrical characteristic curves (Ta = 25°C) <For DTr1(PNP)>
OUTPUT VOLTAGE : VO(on) [V]
Fig.5 Output voltage vs. output current
OUTPUT CURRENT : IO [A]
Electrical characteristic curves (Ta = 25°C) <For DTr2(PNP)>
Fig.7 Output current vs. input voltage
(OFF characteristics)
Fig.6 Input voltage vs. output current
(ON characteristics)
-100
-100
-10
Ta= 40ºC
25ºC
85ºC
125ºC
-1
-0.1
-0.1
VCC= 5V
OUTPUT CURRENT : IO [mA]
INPUT VOLTAGE : VI(on) [V]
VO= 0.3V
-10
-1
Ta= 125ºC
85ºC
25ºC
40ºC
-0.1
-1
-10
-100
-1000
-0
OUTPUT CURRENT : IO [mA]
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© 2013 ROHM Co., Ltd. All rights reserved.
-0.5
-1
-1.5
INPUT VOLTAGE : VI(off)[V]
4/6
2013.11 - Rev.C
Data Sheet
EMD30
Electrical characteristic curves (Ta = 25°C) <For DTr2(NPN)>
Fig.9 DC current gain vs. output current
Fig.8 Output current vs. output voltage
1.0mA
0.9mA
OUTPUT CURRENT : IO [mA]
Ta=25ºC
0.8mA
-150
0.7mA
0.6mA
0.5mA
-100
0.4mA
0.3mA
-50
0.2mA
0.1mA
0A
0
0
-2
-4
-6
-8
-10
1000
DC CURRENT GAIN : GI
II=
-200
VO= 2V
Ta= 125ºC
85ºC
25ºC
40ºC
100
10
1
-0.1
-1
-10
-100
-1000
OUTPUT CURRENT : IO [mA]
OUTPUT VOLTAGE : VO [V]
Fig.10 Output voltage vs. output current
-1
OUTPUT VOLTAGE : VO(on) [V]
IC/II=20
Ta= 125ºC
85ºC
25ºC
40ºC
-0.1
-0.01
-1
-10
-100
-1000
OUTPUT CURRENT : IO [mA]
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5/6
2013.11 - Rev.C
Data Sheet
EMD30
Dimensions (Unit : mm)
D
x
c
S A
Lp
HE
L
E
L
EMT6
A
Lp
b
A1
y S
l1
A
e1
e
S
b2
e
Pattern of terminal position areas
[Not a recommended pattern of soldering pads] DIM
A
A1
b
c
D
E
e
HE
L
Lp
x
y
DIM
b2
e1
l1
MILIMETERS
MIN
MAX
0.45
0.55
0.00
0.10
0.17
0.27
0.08
0.18
1.50
1.70
1.10
1.30
0.50
1.50
1.70
0.10
0.30
0.35
0.10
0.10
INCHES
MIN
0.018
0.000
0.007
0.003
0.059
0.043
MAX
0.022
0.004
0.011
0.007
0.067
0.051
0.020
0.059
0.004
-
MILIMETERS
MIN
MAX
0.37
1.25
0.45
0.067
0.012
0.014
0.004
0.004
INCHES
MIN
-
MAX
0.015
0.049
-
0.018
Dimension in mm / inches
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2013.11 - Rev.C
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications :
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in
this document.
7) The Products specified in this document are not designed to be radiation tolerant.
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below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, servers, solar cells, and power transmission systems.
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equipment, nuclear power control systems, and submarine repeaters.
10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
11) ROHM has used reasonable care to ensur the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
12) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
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R1102A