DTD143TK NPN 500mA 40V Digital Transistors Datasheet (Bias Resistor Built-in Transistors) lOutline Parameter Value VCEO IC R 40V 500mA 4.7kW SMT3 Collector Base Emitter DTD143TK SOT-346 (SC-59) lFeatures lInner circuit 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit). 3) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of completely eliminating parasitic effects. 4) Only the on/off conditions need to be set for operation, making the circuit design easy. 5) Complementary PNP Types :DTB143TK 6) Lead Free/RoHS Compliant. lApplication Switching circuit, Inverter circuit, Interface circuit, Driver circuit lPackaging specifications Part No. DTD143TK Package Package size (mm) Taping code SMT3 2928 T146 www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 1/4 Basic Reel size Tape width ordering (mm) (mm) unit (pcs) 180 8 3,000 Marking F03 2012.07 - Rev.C Data Sheet DTD143TK lAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Values Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 40 V Emitter-base voltage VEBO 5 V IC 500 mA PC *2 200 mW Tj 150 °C Tstg -55 to +150 °C Collector current Collector Power dissipation Junction temperature Range of storage temperature lElectrical characteristics(Ta = 25°C) Parameter Symbol Collector-base breakdown voltage BVCBO Collector-emitter breakdown voltage Emitter-base breakdown voltage Min. Typ. Max. Unit IC= 50mA 50 - - V BVCEO IC= 1mA 40 - - V BVEBO IE= 50mA 5 - - V Collector cut-off current ICBO VCB = 50V - - 0.5 mA Emitter cut-off current IEBO VEB = 4V - - 0.5 mA IC / IB= 50mA / 2.5mA - - 0.3 V 100 250 600 - Collector-emitter saturation voltage DC current gain Emitter-base resistance Transition frequency VCE(sat) hFE Conditions VCE= 5V , IC= 50mA R - 3.29 4.7 6.11 kW fT *1 VCE = 10V, IE = -50mA, f = 100MHz - 200 - MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference footprint www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 2/4 2012.07 - Rev.C Data Sheet DTD143TK lElectrical characteristic curves(Ta = 25°C) Fig.2 Grounded emitter output characteristics Fig.1 Grounded emitter propagation characteristics 10 500 Ta=25ºC COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : Ic (mA) VCE=5V 1 0.1 Ta=100ºC 25ºC -40ºC 0.01 II= 5.0mA 400 4.5mA 4.0mA 3.5mA 300 3.0mA 2.5mA 200 2.0mA 1.5mA 1.0mA 100 0.5mA 0A 0 0.001 0 0.5 1 1.5 0 5 10 COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) Fig.4 Collector-emitter saturation voltage vs. Collector Current DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Fig.3 DC Current gain vs. Collector Current COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 3/4 2012.07 - Rev.C Data Sheet DTD143TK lDimensions (Unit : mm) D SMT3 A c Lp L1 E HE Q e A3 b x S A A1 l1 A e1 e S b2 Patterm of terminal position areas DIM A A1 A3 b c D E e HE L1 Lp Q x y MILIMETERS MIN MAX 1.00 1.30 0.00 0.10 0.25 0.35 0.50 0.09 0.25 2.80 3.00 1.50 1.80 0.95 2.60 3.00 0.30 0.60 0.40 0.70 0.20 0.30 0.10 0.10 DIM e1 b2 l1 INCHES MIN 0 MAX 0.051 0.004 0.01 0.014 0.004 0.11 0.059 0.02 0.01 0.118 0.071 0.04 0.102 0.012 0.016 0.008 - MILIMETERS MIN MAX 2.10 0.60 0.90 0.118 0.024 0.028 0.012 0.004 0.004 INCHES MIN MAX 0.08 - 0.024 0.035 Dimension in mm/inches www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 4/4 2012.07 - Rev.C Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). 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