Schottky Barrier Diode RBQ10NS45A Datasheet lDimensions (Unit : mm) lApplication lLand size figure (Unit : mm) General rectification BQ10NS 45A lFeatures 1 1) Cathode common dual type (LPDS) LPDS 2) Low IR lStructure lConstruction Silicon epitaxial planar Cathode ROHM : LPDS JEITA : TO263S 1 Manufactuare Year, Week and Day Anode Anode lTaping specifications (Unit : mm) lAbsolute maximum ratings (Tc= 25°C) Parameter Symbol Limits Unit Reverse voltage (repetitive) VRM 45 V Reverse voltage (DC) VR 45 V Average rectified forward current (*1) Io 10 A IFSM 50 A Tj 150 °C Forward current surge peak (60Hz・1cyc) (*2) Junction temperature -40 to +150 Storage temperature Tstg (*1) 60Hz half sin wave, 1/2 Io per diode. (*2) 60Hz half sin wave, one cycle, non-repetitive at Tj=25°C. °C lElectrical characteristics (Tj = 25°C) Parameter Symbol Min. Typ. Max. Unit Forward voltage VF - - 0.65 V Reverse current IR - - 0.15 mA www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 1/5 Conditions IF=5A VR=45V 2013.06 - Rev.B Data Sheet RBQ10NS45A lElectrical characteristic curves 100000 Ta = 150°C REVERSE CURRENT : IR(mA) FORWARD CURRENT : IF(A) 10 Ta = 125°C 1 Ta = 75°C Ta = 25°C 0.1 Ta = -25°C 0.01 0 1000 1 Ta = 25°C 0.1 Ta = -25°C 0 10 20 30 FORWARD VOLTAGE : VF(mV) f = 1MHz 100 10 0 5 10 15 20 25 50 Ta=25°C IF=5A n=30pcs 590 580 570 560 AVE : 551.5mV 550 540 530 520 510 500 30 REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 40 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS 600 1000 CAPACITANCE BETWEEN TERMINALS : Ct(pF) Ta = 75°C 10 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS 1 Ta = 125°C 100 0.01 100 200 300 400 500 600 700 800 Ta = 150°C 10000 VF DISPERSION MAP 2/5 2013.06 - Rev.B Data Sheet RBQ10NS45A lElectrical characteristic curves Ta=25°C VR=45V n=30pcs 25 20 15 AVE : 12.2mA 10 5 550 530 520 510 500 490 480 470 450 IR DISPERSION MAP Ct DISPERSION MAP 300 30 IFSM 8.3ms 1cyc. AVE : 127.5A 100 REVERSE RECOVERY TIME : trr(ns) PEAK SURGE FORWARD CURRENT : IFSM(A) AVE : 489.8pF 460 0 200 Ta=25°C f=1MHz VR=0V n=10pcs 540 CAPACITANCE BETWEEN TERMINALS : Ct(pF) REVERSE CURRENT : IR(mA) 30 0 IFSM DISPERSION MAP www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. Ta=25°C IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 15 AVE : 10.8ns 10 5 0 trr DISPERSION MAP 3/5 2013.06 - Rev.B Data Sheet RBQ10NS45A lElectrical characteristic curves 300 IFSM 250 8.3ms PEAK SURGE FORWARD CURRENT : IFSM(A) PEAK SURGE FORWARD CURRENT : IFSM(A) 300 8.3ms 1cyc. 200 150 100 50 0 1 10 250 time 200 150 100 50 0 100 IFSM 1 1000 10 100 8 10 Rth(j-a) 1 Rth(j-c) 0.1 0.01 0.001 0.01 0.1 1 10 100 D = 1/2 6 Sin(θ=180) 4 DC 2 0 1000 0 5 10 15 20 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS TIME : t(s) Rth-t CHARACTERISTICS www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 100 TIME : t(ms) IFSM-t CHARACTERISTICS FORWARD POWER DISPERSION : PF (W) TRANSIENT THERMAL IMPEDANCE : Rth (°C/W) NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 10 4/5 2013.06 - Rev.B Data Sheet RBQ10NS45A lElectrical characteristic curves 30 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) REVERSE POWER DISPERSION : PR (W) 2 1.5 DC 1 D = 1/2 0.5 0 Sin(θ=180) 0 10 20 30 40 VR D=t/T VR=20V Tj=150°C T D = 1/2 10 Sin(θ=180) 5 0 25 50 75 100 125 150 AMBIENT TEMPERATURE : Ta(°C) DERATING CURVE (Io-Ta) 30 30 Io 0A 25 0V 20 DC 15 t T ELECTROSTATIC DISCHARGE TEST ESD(kV) AVERAGE RECTIFIED FORWARD CURRENT : Io(A) t DC 15 REVERSE VOLTAGE : VR(V) VR-PR CHARACTERISTICS VR D=t/T VR=20V Tj=150°C D = 1/2 10 Sin(θ=180) 5 0 0V 20 0 50 Io 0A 25 0 25 50 75 100 125 CASE TEMPERATURE : Tc(°C) DERATING CURVE (Io-Tc) www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 20 15 10 AVE : 4.9kV 5 0 150 AVE : 23.3kV 25 C=200pF R=0W C=100pF R=1.5kW ESD DISPERSION MAP 5/5 2013.06 - Rev.B Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications : 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document. 7) The Products specified in this document are not designed to be radiation tolerant. 8) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. 9) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 11) ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 12) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 13) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. 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