RB168L150 : Diode

Schottky Barrier Diode
Data Sheet
RB168L150
lApplication
lDimensions (Unit : mm)
General rectification
lLand Size Figure (Unit : mm)
2.0
1) Small power mold type
(PMDS)
5.0±0.3
4.5±0.2
1.2±0.3
lFeatures
4.2
2.0
2.6±0.15
0.1±0.02
1
2
PMDS
2) High reliability
2.0±0.2
1.5±0.2
3) Super low IR
Cathode
lStructure
ROHM : PMDS
JEDEC : SOD-106
1
lConstruction
2
: Manufacture Date
Anode
lTaping Dimensions (Unit : mm)
Silicon epitaxial planar type
2.0±0.05
f1.550.05
φ
1.55±0.05
0.3
12±0.2
5.5±0.05
5.3±0.1
0.05
9.5±0.1
1.75±0.1
4.0±0.1
f1.55
φ
1.55
2.9±0.1
4.0±0.1
2.8MAX
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
VRM
Duty≦0.5
150
V
Reverse voltage
VR
Direct reverse voltage
150
V
Average forward rectified current
Io
Glass epoxy board mounted, 60Hz half sin wave,
1
A
30
A
Non-repetitive forward current surge peak
IFSM
resistive load, Tc=125ºC Max.
60Hz half sin wave, one cycle,
non-repetitive at Ta=25ºC
Tj
-
150
°C
Tstg
-
-55 to +150
°C
Operating junction temperature
Storage temperature
lElectrical Characteristics (Tj= 25°C)
Parameter
Symbol
Conditions
Min.
Forward voltage
VF
IF=1.0A
-
-
0.84
V
Reverse current
IR
VR=150V
-
-
4.0
mA
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1/5
Typ. Max. Unit
2015.01 - Rev.A
Data Sheet
RB168L150
lElectrical Characteristic Curves
100
Tj = 150°C
REVERSE CURRENT : IR(mA)
FORWARD CURRENT : IF(A)
10
Tj = 125°C
1
Tj = 75°C
0.1
Tj = 25°C
Tj = -25°C
0.01
10
0.1
Tj = 125°C
Tj = 75°C
0.01
Tj = 25°C
0.001
0.0001
Tj = -25°C
0.00001
0.001
0
200
400
600
800
1000
0
1200
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
50
100
150
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
1000
810
Tj = 25°C
f = 1MHz
FORWARD VOLTAGE : VF(mV)
CAPACITANCE BETWEEN
TERMINALS : Ct(pF)
Tj = 150°C
1
100
10
Tj=25°C
IF=1.0A
n=30pcs
800
790
780
770
Ave. : 750.3mV
760
750
740
730
0
5
10
15
20
25
30
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
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VF DISPERSION MAP
2/5
2015.01 - Rev.A
Data Sheet
RB168L150
lElectrical Characteristic Curves
160
100
REVERSE CURRENT : IR(nA)
90
80
70
60
Ave. : 41.2nA
50
40
30
140
130
120
110
90
10
80
IR DISPERSION MAP
Ct DISPERSION MAP
40
IFSM
250
1cyc
8.3ms
Ta=25°C
200
Ave. : 119A
100
50
REVERSE RECOVERY TIME : trr(ns)
PEAK SURGE
FORWARD CURRENT : IFSM(A)
350
150
Ave. : 97pF
100
20
300
Tj=25°C
f=1MHz
VR=0V
n=10pcs
150
CAPACITANCE BETWEEN
TERMINALS : Ct(pF)
Tj=25°C
VR=150V
n=30pcs
Tj=25°C
IF=0.5A
IR=1.0A
Irr / IR=0.25
n=10pcs
35
30
25
20
15
Ave. : 8.2ns
10
5
0
0
IFSM DISPERSION MAP
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© 2015 ROHM Co., Ltd. All rights reserved.
trr DISPERSION MAP
3/5
2015.01 - Rev.A
Data Sheet
RB168L150
lElectrical Characteristic Curves
1000
IFSM
PEAK SURGE
FORWARD CURRENT : IFSM(A)
PEAK SURGE
FORWARD CURRENT : IFSM(A)
1000
8.3 8.3
ms ms
1cyc
Ta=25°C
100
10
1cyc
IFSM
time
Ta=25°C
100
10
1
10
100
1
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
10
100
TIME : t(ms)
IFSM-t CHARACTERISTICS
0.030
1.5
Tj = 150°C
Tj = 150°C
1.0
REVERSE POWER
DISSIPATION : PR (W)
FORWARD POWER
DISSIPATION : PF (W)
0.025
0.020
D = 1/2
0.015
Sin(θ=180)
0.5
Sin(θ=180)
D = 1/2
0.010
DC
DC
0.005
0.000
0.0
0
0.5
1
1.5
0
2
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-PF CHARACTERISTICS
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© 2015 ROHM Co., Ltd. All rights reserved.
50
100
150
REVERSE VOLTAGE : VR(V)
VR-PR CHARACTERISTICS
4/5
2015.01 - Rev.A
Data Sheet
RB168L150
lElectrical Characteristic Curves
3
Rth(j-a)
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
TRANSIENT
THERMAL IMPEDANCE : Rth (°C/W)
1000
100
Rth(j-c)
10
Glass epoxy board mounted
IM=100mA
IF=1.0A
1
time
IO
0A
0V
T
2
DC
D=t/T
VR=VRM/2
Tj=150°C
D = 1/2
1
Sin(θ=180)
1ms 300ms
0.1
0.001
0
0.01
0.1
1
10
100
0
1000
TIME : t(s)
Rth-t CHARACTERISTICS
25
50
75
100
125
150
AMBIENT TEMPERATURE : Ta(°C)
DERATING CURVE (Io-Ta)
8
3
IO
0A
0V
VR
t
T
2
ELECTROSTATIC
DISCHARGE TEST : ESD(kV)
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
t
VR
DC
D=t/T
VR=VRM/2
Tj=150°C
D = 1/2
1
Sin(θ=180)
7
6
5
4
3
AVE. : 1.2kV
2
1
0
0
0
25
50
75
100
125
150
CASE TEMPERATURE : Tc(°C)
DERATING CURVE (Io-Tc)
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© 2015 ROHM Co., Ltd. All rights reserved.
AVE. : 0.6kV
C=200pF
R=0W
C=100pF
R=1.5kW
ESD DISPERSION MAP
5/5
2015.01 - Rev.A
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications :
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in
this document.
7) The Products specified in this document are not designed to be radiation tolerant.
8) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, servers, solar cells, and power transmission systems.
9) Do not use our Products in applications requiring extremely high reliability, such as aerospace
equipment, nuclear power control systems, and submarine repeaters.
10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
11) ROHM has used reasonable care to ensur the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
12) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
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non-compliance with any applicable laws or regulations.
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R1102A