Zener Diode Datasheet EDZV series Dimensions (Unit : mm) Application 0.8±0.05 0.12±0.05 0.8 0.6 Constant voltage control Land size figure (Unit : mm) 1.2±0.05 1) Compact,2-pin mini-mold type for high-density mounting. (EMD2) 1.6±0.1 1.7 Features EMD2 2) High reliability. 3) Can be mounted automatically, 0.3±0.05 0.6±0.1 using chip mounter. Structure Cathode ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79 Construction EX. EDZV3.6B Anode Silicon epitaxial planar Taping specifications (Unit : mm) Absolute maximum ratings (Ta = 25°C) Parameter Symbol Limits Unit Power dissipation P 150 mW Junction temperature Tj 150 °C Storage temperature Tstg 55 to 150 °C Operating temperature Topr 55 to 150 °C www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1/5 2015.01 - Rev.B Data Sheet EDZV series Electical characteristics (Ta=25°C) Symbol TYP. Zener voltage :Vz(V) Operating resistance :Zz(Ω) Rising operataing resistance :Zz(Ω) Reverse current : IR(A) MIN. MAX. Iz(mA) MAX. Iz(mA) MAX. Iz(mA) MAX. VR(V) EDZV 3.6B 3.600 3.845 5.0 100 5.0 1000 1.0 10.0 1.0 EDZV 3.9B 3.890 4.160 5.0 100 5.0 1000 1.0 5.0 1.0 EDZV 4.3B 4.170 4.430 5.0 100 5.0 1000 1.0 5.0 1.0 100 5.0 800 0.5 2.0 1.0 80 5.0 500 0.5 2.0 1.5 200 0.5 1.0 2.5 100 0.5 1.0 3.0 3.5 EDZV 4.7B 4.550 4.750 5.0 EDZV 5.1B 4.980 5.200 5.0 60 5.0 60 5.0 60 0.5 0.5 60 0.5 0.5 4.0 5.0 EDZV 5.6B 5.490 5.730 5.0 EDZV 6.2B 6.060 6.330 5.0 40 5.0 30 5.0 60 0.5 0.5 60 0.5 0.5 6.0 7.0 8.0 EDZV 6.8B 6.650 6.930 5.0 EDZV 7.5B 7.280 7.600 5.0 30 5.0 30 5.0 60 0.5 0.1 60 0.5 0.1 9.0 EDZV 8.2B 8.020 8.360 5.0 EDZV 9.1B 8.850 9.230 5.0 30 5.0 30 5.0 EDZV 10B 9.770 10.210 5.0 EDZV 11B 10.760 11.220 5.0 EDZV 12B 11.740 12.240 5.0 30 5.0 80 0.5 0.1 EDZV 13B 12.910 13.490 5.0 37 5.0 80 0.5 0.1 10.0 EDZV 15B 14.340 14.980 5.0 42 5.0 80 0.5 0.1 11.0 EDZV 16B 15.850 16.510 5.0 50 5.0 80 0.5 0.1 12.0 EDZV 18B 17.560 18.350 5.0 80 0.5 0.1 13.0 19.520 20.390 5.0 65 85 5.0 EDZV 20B 5.0 100 0.5 0.1 15.0 EDZV 22B 21.540 22.470 5.0 100 5.0 100 0.5 0.1 17.0 EDZV 24B 23.720 24.780 5.0 120 5.0 120 0.5 0.1 19.0 EDZV 27B 26.190 27.530 2.0 150 2.0 150 0.5 0.1 21.0 EDZV 30B 29.190 30.690 2.0 200 2.0 200 0.5 0.1 23.0 EDZV 33B 32.150 35.070 33.790 36.870 2.0 250 2.0 300 2.0 250 300 0.5 0.5 0.1 2.0 0.1 25.0 27.0 EDZV 36B (1) The zener voltage(Vz) is measured 40ms after power is supplied. (2) The operating resistances(Zz,Zzk) are measured by superimposing a minute alternating current on the regulated current(Iz) MARKING (Type No.) TYPE TYPE TYPE NO. TYPE NO. EDZV 3.6B 6 2 EDZV 12B 2 5 EDZV 3.9B 7 2 EDZV 13B 3 5 EDZV 4.3B 8 2 EDZV 15B 4 5 EDZV 4.7B 9 2 EDZV 16B 5 5 EDZV 5.1B A 2 EDZV 18B 6 5 EDZV 5.6B C 2 EDZV 20B 7 5 EDZV 6.2B E 2 EDZV 22B 8 5 EDZV 6.8B F 2 EDZV 24B 9 5 EDZV 7.5B H 2 EDZV 27B A 5 EDZV 8.2B J 2 EDZV 30B C 5 EDZV 9.1B L 2 EDZV 33B E 5 EDZV 10B 0 5 EDZV 36B EDZV 11B 1 5 www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. F 5 2/5 2015.01 - Rev.B Data Sheet EDZV series 10 ZENER CURRENT:Iz(mA) 1 0.1 4.7 0.01 7.5 5.1 5.6 4.3 8.2 6.8 3.9 9.1 10 6.2 11 3.6 12 15 13 16 18 22 20 24 33 30 27 36 0.001 0 5 10 15 20 25 30 35 40 ZENER VOLTAGE:Vz(V) Vz-Iz CHARACTERISTICS POWER DISSIPATION:Pd(mW) 200 150 100 50 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta(°C) Pd-Ta CHARACTERISTICS 40 0.1 %/°C 1000 Mounted on epoxy board 0.06 30 0.04 25 0.02 20 0 15 mV/°C -0.02 10 -0.04 5 -0.06 0 -5 -0.08 0 10 20 30 Rth(j-a) Rth(j-c) 100 10 0.001 40 ZENER VOLTAGE:Vz(V) γz-Vz CHARACTERISTICS www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. TRANSIENT THAERMAL IMPEDANCE:Rth (°C/W) 35 TEMP.COEFFICIENCE:γz(mV/°C) TEMP.COEFFICIENCE:γz(%/°C) 0.08 0.01 0.1 1 10 100 1000 TIME:t(s) Rth-t CHARACTERISTICS 3/5 2015.01 - Rev.B Data Sheet EDZV9.1B 1000 10 Ta=25°C 1 REVERSE CURRENT:IR (pA) ZENER CURRENT:Iz(mA) Ta=125°C 100 Ta=125°C Ta=25°C 0.1 Ta=75°C 0.01 Ta=75°C 10 Ta=25°C 1 0.1 0.001 0.01 7 8 9 10 11 0 ZENER VOLTAGE:Vz(V) VzIz CHARACTERISTICS 1 2 3 4 5 6 7 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS 9.3 100 f=1MHz Ta=25°C IZ=5mA n=30pcs ZENER VOLTAGE:Vz(V) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 9.2 10 9.1 9.0 AVE:9.092V 8.9 1 8.8 0 1 2 3 4 5 6 Vz DISRESION MAP REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 8 25 REVERSE CURRENT:IR(pA) 7 6 5 4 AVE:1.967pA 3 2 24 CAPACITANCE BETWEENTERMINALS:Ct(pF) Ta=25°C VR=6.0V n=30pcs 1 Ta=25°C f=1MHz VR=0V n=10pcs 23 22 21 20 19 18 AVE:19.38pF 17 16 0 15 Ct DISRESION MAP IR DISRESION MAP www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 4/5 2015.01 - Rev.B Data Sheet EDZV9.1B 30 1000 No break at 30kV No break at 30kV ELECTROSTATIC DISCHARGE TEST ESD [kV] DYNAMIC IMPEDANCE:Zz(Ω) 25 100 10 1 20 AVE:15.9kV 15 10 5 0 0.1 1 10 C=200pF R=0Ω ZENER CURRENT(mA) ZzIz CHARACTERISTICS www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. C=150pF R=330Ω C=100pF R=1.5kΩ ESD DISPERSION MAP 5/5 2015.01 - Rev.B Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications : 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document. 7) The Products specified in this document are not designed to be radiation tolerant. 8) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. 9) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 11) ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 12) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 13) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. 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