YFZVFH4.3B : Diodes

Zener Diode
Datasheet
YFZVFH series
Application
AEC-Q101 Qualified
Land size figure (Unit : mm)
Dimensions (Unit : mm)
Voltage regulation
1.1
0.17 0.10
0.05
2.0
1.40  0.10
0~
0.10
3) By chip-mouter,
automatic mouting is possible.
0.80  0.05
0.20
0.60
0.10
0.8 0.5
2.50  0.20
2) High reliability
N6
1) Small power mold type (TUMD2M)
2.00  0.10
Features
TUMD2M
Cathode
 Structure
ROHM : TUMD2M
Construction
dot (year week factory)  day
EX. YFZVFH3.6B
Silicon epitaxial planar
Taping dimensions (Unit : mm)
0.25±0.05
8.0±0.2
2.75
1.43±0.05
4.0±0.1
1.0
 0.2
φ1.0±0.2
0
2.8±0.05
1.55
 0.1
φ1.55±0.1
0
1.75±0.1
2.0±0.05
3.5±0.05
4.0±0.1
Anode
0.9±0.08
Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits
Unit
Power dissipation ()
P
500
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to 150
°C
Operating temperature
Topr
55 to 150
°C
() Device mounted on glass-epoxy board(50×50mm, t=1.6mm) Solder land (10×10mm)
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1/6
2015.05 - Rev.B
Data Sheet
YFZVFH series
Electrical characteristics (Ta= 25°C)
Symbol
Dynamic Impedance : Reverse current
:
Zener voltage : VZ(V)
TYP.
ZZ()
IR(A)
IZ(mA)
VR(V)
IZ(mA)
MAX.
MAX.
MIN.
MAX.
0.5
YFZV 2.0B
2.020
2.200
20
140
20
120
0.7
YFZV 2.2B
2.220
2.410
20
120
20
120
2.430
2.630
1.0
YFZV 2.4B
20
100
20
120
2.690
2.910
1.0
YFZV 2.7B
20
100
20
100
3.010
3.220
1.0
YFZV 3.0B
20
80
20
50
3.320
3.530
1.0
YFZV 3.3B
20
70
20
20
3.600
3.845
1.0
YFZV 3.6B
20
60
20
10
3.890
4.160
1.0
YFZV 3.9B
20
50
20
5
4.170
4.430
1.0
YFZV 4.3B
20
40
20
5
4.550
4.800
1.0
YFZV 4.7B
20
25
20
5
4.940
5.200
1.5
YFZV 5.1B
20
20
20
5
5.450
5.730
2.5
YFZV 5.6B
20
13
20
5
5.960
6.270
3.0
YFZV 6.2B
20
10
20
5
6.490
6.830
3.5
YFZV 6.8B
20
8
20
2
7.070
7.450
4.0
YFZV 7.5B
20
8
20
0.5
7.780
8.190
5.0
YFZV 8.2B
20
8
20
0.5
8.570
9.010
6.0
YFZV 9.1B
20
8
20
0.5
9.410
9.900
7.0
YFZV 10B
20
8
20
0.2
10.500
11.050
8.0
YFZV 11B
10
10
10
0.2
11.440
12.030
9.0
YFZV 12B
10
12
10
0.2
12.550
13.210
10
YFZV 13B
10
14
10
0.2
13.890
14.620
11
YFZV 15B
10
16
10
0.2
15.250
16.040
12
YFZV 16B
10
18
10
0.2
16.820
17.700
13
YFZV 18B
10
23
10
0.2
18.630
19.590
15
YFZV 20B
10
28
10
0.2
20.640
21.710
17
YFZV 22B
5
30
5
0.2
22.610
23.770
19
YFZV 24B
5
35
5
0.2
24.970
26.260
21
YFZV 27B
5
45
5
0.2
27.700
29.130
23
YFZV 30B
5
55
5
0.2
30.320
31.880
25
YFZV 33B
5
65
5
0.2
32.790
34.490
27
YFZV 36B
5
75
5
0.2
35.360
37.190
30
YFZV 39B
5
85
5
0.2
(1) The zener voltage(VZ) is measured 40ms after power is supplied.
(2) The Dynamic Impedance(ZZ) are measured by superimposing a minute alternating current
on the regulated current(IZ)
MARKING (TYPE NO.)
TYPE
YFZV 2.0B
YFZV 2.2B
YFZV 2.4B
YFZV 2.7B
YFZV 3.0B
YFZV 3.3B
YFZV 3.6B
YFZV 3.9B
YFZV 4.3B
YFZV 4.7B
YFZV 5.1B
YFZV 5.6B
YFZV 6.2B
YFZV 6.8B
YFZV 7.5B
YFZV 8.2B
TYPE NO.
N1
N4
N5
N3
N4
N5
N6
N7
N8
N9
NA
NB
NC
ND
NE
NF
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TYPE
YFZV 9.1B
YFZV 10B
YFZV 11B
YFZV 12B
YFZV 13B
YFZV 15B
YFZV 16B
YFZV 18B
YFZV 20B
YFZV 22B
YFZV 24B
YFZV 27B
YFZV 30B
YFZV 33B
YFZV 36B
YFZV 39B
2/6
TYPE NO.
NG
NH
NJ
NK
NL
NM
NN
NP
NQ
NR
NS
NT
NU
NV
NW
NX
2015.05 - Rev.B
Data Sheet
YFZVFH series
Electrical characteristic curves
100
3.6 3.9 4.7
5.6
4.3 5.1
6.2
3.3
3.0
6.8
7.5 8.2 9.1 10 11 12
13
15
2.7
2.4
10
2.2
16
18
20
22
24
27
30
33
36
39
ZENER CURRENT : IZ(mA)
2.0
1
0.1
0.01
0.001
0
5
10
15
20
25
30
35
40
ZENER VOLTAGE : VZ(V)
VZ -IZ CHARACTERISTICS
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3/6
2015.05 - Rev.B
Data Sheet
YFZVFH series
Electrical characteristic curves
10000
500
REVERS SURGE MAXIMUM
POWER : PRSM(W)
POWER DISPERSION : Pd(mW)
600
400
300
200
100
0
0
50
100
150
t
1pulse
100
10
1
0.001
200
0.01
0.1
1
10
TIME : t(ms)
PRSM-TIME CHARACTERISTICS
AMBIENT TEMPERATURE : Ta(°C)
Pd-Ta CHARACTERISTICS
0.08
35
%/°C
0.06
30
0.04
25
0.02
20
mV/°C
0
15
-0.02
10
-0.04
5
-0.06
0
-0.08
-5
TEMP.COEFFICIENCE : Z(mV/°C)
40
0.1
TEMP.COEFFICIENCE : Z(%/°C)
PRSM
1000
-10
-0.1
0
5
10
15
20
25
30
35
40
ZENER VOLTAGE : VZ(V)
Z -VZ CHARACTERISTICS
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4/6
2015.05 - Rev.B
Data Sheet
YFZVFH4.3B
Electrical Characteristic Curves
100
REVERSE CURRENT : IR(nA)
ZENER CURRENT : IZ(mA)
100
10
Ta = 125°C
Ta = 75°C
1
Ta = 25°C
0.1
Ta = 25°C
0.01
1
0.1
Ta = 75°C
0.01
Ta = 25°C
0.001
0.001
0
1
2
3
4
0
5
ZENER VOLTAGE : VZ(V)
VZ -IZ CHARACTERISTICS
0.2
0.4
0.6
0.8
1
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
1000
4.5
ZENER VOLTAGE : VZ(V)
f = 1MHz
CAPACITANCE BETWEEN
TERMINALS : Ct(pF)
Ta = 125°C
10
100
10
1
4.4
Ta=25°C
IZ=20mA
n=30pcs
4.3
AVE. : 4.31V
4.2
4.1
4
0
0.2
0.4
0.6
0.8
1
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
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VZ DISPERSION MAP
5/6
2015.05 - Rev.B
Data Sheet
YFZVFH4.3B
Electrical Characteristic Curves
400
Ta=25°C
VR=1.0V
n=30pcs
40
CAPACITANCE BETWEEN
TERMINALS : Ct(pF)
REVERSE CURRENT : IR(nA)
50
AVE. : 27.7nA
30
20
10
0
Ta=25°C
f=1MHz
VR=0V
n=10pcs
380
360
AVE. : 342.9pF
340
320
300
IR DISPERSION MAP
Ct DISPERSION MAP
DYNAMIC IMPEDANCE : ZZ()
10000
1000
100
10
0.1
1
10
ZENER CURRENT : IZ(mA)
ZZ -IZ CHARACTERISTICS
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© 2015 ROHM Co., Ltd. All rights reserved.
6/6
2015.05 - Rev.B
Notice
Notes
1) The information contained herein is subject to change without notice.
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Therefore, in order to prevent personal injury or fire arising from failure, please take safety
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ROHM.
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provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
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R1102A