AME8850\CMOS LDO

AME
AME8850
n General Description
The AME8850 family of positive, linear regulators feature low quiescent current (30µA Typ.) with low dropout
voltage, making them ideal for battery applications. The
space-saving SOT-25/TSOT-25, SOP-8 & DFN-8C packages are attractive for " Pocket " and " Hand Held " applications.
These rugged devices have both Thermal Shutdown,
and Current Fold-back to prevent device failure under the
" Worst " operating conditions.
600mA CMOS LDO
n Functional Block Diagram
IN
OUT
Overcurrent
Shutdown
Thermal
Shutdown
EN
The AME8850 is stable with an output capacitance of
2.2µF or greater.
AMP
ADJ
n Features
V REF =1.2V
l Very Low Dropout Voltage
GND
l Guaranteed 600mA Output
l Typical 30µA Quiescent Current
l Output Voltage Accurate to within 2.5%
l Over-Temperature Shutdown
l Current Limiting
l Short Circuit Current Fold-back
l Power-Saving Shutdown Mode
l Space-Saving SOT-25/TSOT-25, SOP-8 &
DFN-8C Packages
l User Adjustable Output Voltages
n Typical Application
EN
IN
IN
C1
OUT
OUT
AME8850
GND
ADJ
C2
R1
1µF
100p
C3
2.2µF
R2
l Low Temperature Coefficient
l All AME's Lead Free Products Meet RoHS
Standards
n Applications
l Instrumentation
l Portable Electronics
l Wireless Devices
l Cordless Phones
l PC Peripherals
VOUT = 1.2 ( R1/R2 +1 )
C2 is unnecessary if R1 or R2 < 20 K Ohms
R R and R use resistance value within 1% accuracy for
1
2
and correct
VOUT
l Battery Powered Widgets
Rev.B.03
1
AME
AME8850
600mA CMOS LDO
n Pin Configuration
SOP-8
Top View
8
7
6
SOP-8
Top View
AME8850AEHA
5
7
6
5
1. EN
2. GND
2. IN
4. EN
AME8850
伍 豐 明 年 每 股 EPS挑5.戰ADJ
11元
伍豐
6. GND
1
2
3
4
7. GND
6. GND
1
2
3
4
5
* Die Attach:
* Die Attach:
Conductive Epoxy
SOT-25 / TSOT-25
Top View
5
4
3. GND
2. GND
2
3
AME8850
5. OUT
5. OUT
4
3. EN
4. ADJ
4. IN
6. GND
1
AME8850AEEV
1. IN
1. EN
2. GND
AME8850
7. GND
8. GND
AME8850AEVA
6
4. ADJ
8. OUT
DFN-8C
(3mmx3mmx0.75mm)
Top View
7
3. OUT
5. GND
Conductive Epoxy
8
AME8850BEHA
1. IN
3. GND
AME8850
8
1
2
3
7. GND
8. ADJ
* Die Attach:
Conductive Epoxy
* Die Attach:
Conductive Epoxy
Note:
The area enclosed by dashed line represents Exposed Pad and connect to GND.
2
Rev.B.03
AME
AME8850
600mA CMOS LDO
n Ordering Information
AME8850 x x x x xxx x - x
Special Feature2
Special Feature1
Output Voltage
Number of Pins
Package Type
Operating Ambient Temperature Range
Pin Configuration
Pin
Configuration
A: 1. IN
2. GND
3. GND
4. EN
5. ADJ
6. GND
7. GND
8. OUT
(SOP-8)
Operating Ambient
Temperature
Range
Package
Type
E: -40O C to +85O C H: SOP
V: DFN
E: SOT-2X
Number
of
Pins
A: 8
V: 5
Output
Voltage
Special
Feature1
ADJ: Adjustable
Z: Lead Free
Lead Free &
Y:
Low Profile
Special Feature 2
(For DFN package only)
3: 3x3x0.75(mm)(LxWxH)
(For TSOT-25 only)
B: 1. EN
2. IN
3. OUT
4. ADJ
5. GND
6. GND
7. GND
8. GND
(SOP-8)
A: 1. EN
2. GND
3. GND
4. IN
5. OUT
6. GND
7. GND
8. ADJ
(DFN-8C)
A: 1. IN
2. GND
(TSOT-25) 3. EN
4. ADJ
5. OUT
(SOT-25)
Rev.B.03
3
AME
AME8850
600mA CMOS LDO
n Ordering Information
Part Number
Marking*
Output
Voltage
Package
Operating Ambient
Temperature Range
AME8850AEHAADJZ
8850
AEHA
yyww
Adjustable
SOP-8
- 40oC to +85oC
8850
AME8850BEHAADJZ
BEHA
伍 豐 明 年 每 股 EPS挑
戰 11元
yyww
伍豐
Adjustable
SOP-8
- 40oC to +85oC
AME8850AEEVADJZ
BIRww
Adjustable
SOT-25
- 40oC to +85oC
AME8850AEEVADJY
BIRww
Adjustable
TSOT-25
- 40oC to +85oC
AME8850AEVAADJZ-3
BIQ
yyww
Adjustable
DFN-8C
- 40oC to +85oC
Note: yyww & ww represents the date code and pls refer to Date Code Rule.
* A line on top of the first letter represents lead free plating such as 8850.
Please consult AME sales office or authorized Rep./Distributor for package type availability.
4
Rev.B.03
AME
AME8850
600mA CMOS LDO
n Absolute Maximum Ratings
Parameter
Maximum
Unit
Input Voltage
-0.3 to 8
V
EN Voltage
-0.3 to 8
V
Output Voltage
-0.3 to VIN + 0.3
V
Output Current
PD / (VIN - VOUT)
mA
B*
ESD Classification
Caution: Stress above the listed absolute maximum rating may cause permanent damage to the device.
*HBM B:2000V~3999V
n Recommended Operating Conditions
Parameter
Symbol
Rating
Ambient Temperature Range
TA
- 40 to +85
o
Junction Temperature Range
TJ
- 40 to +125
o
Storage Temperature Range
TSTG
- 65 to +150
o
Rev.B.03
Unit
C
C
C
5
AME
AME8850
600mA CMOS LDO
n Thermal Information
Parameter
Package
Die Attach
Symbol
SOP-8
Thermal Resistance*
(Junction to Case)
θJC
SOT-25 / TSOT-25
DFN-8C
Internal Power Dissipation
SOT-25 / TSOT-25
Unit
60
81
17
伍 豐 明 年 每 股 EPS挑 戰 11元
伍豐
SOP-8
Thermal Resistance
(Junction to Ambient)
Maximum
o
C/W
150
Conductive
Epoxy
θJA
260
DFN-8C
125
SOP-8
810
SOT-25 / TSOT-25
DFN-8C
Solder Iron (10 Sec)**
PD
400
mW
800
350
o
C
* Measure θJC on center of molding compound if IC has no tab. O
** MIL-STD-202G 210F F
6
Rev.B.03
AME
AME8850
600mA CMOS LDO
n Electrical Specifications
TA = 25OC unless otherwise noted
Parameter
Input Voltage
Output Voltage Accuracy
Dropout Voltage
Test Condition
Symbol
Min
VIN
VOUT
VDROP
IOUT = 1mA
Typ
Max
Units
Note 1
7
V
-2.5
2.5
%
1.2V < VOUT(nom) <= 2.0V
IOUT = 600mA
VOUT = VOUT(nom) -2.0%
1400
See
chart
2.0V < VOUT(nom) <= 2.8V
2.8V < VOUT(nom)
800
mV
600
Output Current
IOUT
VOUT > 1.2V
600
Current Limit
ILIM
VOUT >= 1.2V
600
Short Circuit Current
ISC
VOUT < 0.8V
300
600
mA
Quiescent Current
IQ
IOUT = 0mA
30
50
µA
IGND
IOUT = 1mA to 600mA
30
Ground Pin Current
Line Regulation
REGLINE
Load Regulation
REGLOAD
Over Temperature Shutdown
Over Temperature Hysterisis
VO Temperature Coefficient
Power Supply Ripple Rejection
Output Voltage Noise
ADJ Reference Voltage
EN Input Threshold
EN Input Bias Current
Shutdown Current
IOUT=1mA
VOUT < 2.0V
VIN =VOUT+1 to VOUT+2
VOUT >= 2.0V
IOUT = 1mA to 600mA
mA
800
mA
µA
0.15
%
0.02
0.1
%
0.2
1
%
150
o
C
OTH
30
o
C
TC
30
OTS
PSRR
eN
IOUT = 100mA
CO = 2.2µF
f = 10Hz to 100kHz
IOUT = 10mA
ppm/oC
f = 1kHz
50
f = 10kHz
20
f = 100kHz
15
Co = 2.2µF
30
µVrms
1.176 1.200 1.224
V
VREF
dB
VEH
VIN = 2.7V to 7V
2.0
Vin
V
VEL
VIN = 2.7V to 7V
0
0.4
V
IEH
VEN = VIN, VIN = 2.7V to 7V
0.1
µA
IEL
VEN = 0V, VIN = 2.7V to 7V
0.5
µA
ISHDN
VIN = 5V, VOUT = 0V, V EN < V EL
1
µA
0.5
Note1:VIN(min) =VOUT+VDROPOUT
Rev.B.03
7
AME
AME8850
600mA CMOS LDO
n Detailed Description
n Enable
The AME8850 family of CMOS regulators contain a
PMOS pass transistor, voltage reference, error amplifier,
over-current protection, and thermal shutdown.
The Enable pin normally floats high. When actively,
pulled low, the PMOS pass transistor shuts off, and all
internal circuits are powered down. In this state, the quiescent current is less than 1µA. This pin behaves much
like an electronic switch.
The P-channel pass transistor receives data from the
error amplifier, over-current shutdown, and thermal protection circuits. During normal operation, the error amplifier compares the output voltage to a precision reference.
Over-current
Thermal
become ac伍and
豐明
年 每 shutdown
股 EPS挑circuits
戰 11元
tive when the junction temperature
exceeds 150oC, or
伍豐
the current exceeds 600mA. During thermal shutdown,
the output voltage remains low. Normal operation is restored when the junction temperature drops below 120oC.
The AME8850 switches from voltage mode to current
mode when the load exceeds the rated output current.
This prevents over-stress. The AME8850 also incorporates current fold-back to reduce power dissipation when
the output is short circuited. This feature becomes active
when the output drops below 0.8 volts, and reduces the
current flow by 65%. Full current is restored when the
voltage exceeds 0.8 volts.
n ADJ
The ADJ pin is the positive input to the error amplifier
which, due to the PMOS pass element inversion, means
it is actually the negative input of the LDO feedback loop.
The feedback works to keep the voltage at the ADJ pin
1.2V with respect to ground. Since the internal circuitry
at the ADJ pin is essentially an ESD protected CMOS
gate the input current at the ADJ pin is virtually zero.
n External Capacitors
The AME8850 is stable with an output capacitor to
ground of 2.2µF or greater. Ceramic capacitors have the
lowest ESR, and will offer the best AC performance. Conversely, Aluminum Electrolytic capacitors exhibit the highest ESR, resulting in the poorest AC response. Unfortunately, large value ceramic capacitors are comparatively
expensive. One option is to parallel a 0.1µF ceramic capacitor with a 10µF Aluminum Electrolytic. The benefit is
low ESR, high capacitance, and low overall cost.
A second capacitor is recommended between the input and ground to stabilize Vin. The input capacitor should
be at least 0.1µF to have a beneficial effect.
All capacitors should be placed in close proximity to
the pins. A "Quiet" ground termination is desirable. This
can be achieved with a "Star" connection.
8
Rev.B.03
AME
AME8850
600mA CMOS LDO
n External Resistor Divider Table (contd.)
R1
(K Ohm)
0
1
2
3
1.30
1.35
1.40
1.45
1.50
1.55
1.60
1.65
1.70
1.75
1.80
1.85
1.90
1.95
2.00
2.05
2.10
2.15
2.20
2.25
2.30
2.35
2.40
2.45
2.50
2.55
2.60
2.65
2.70
2.75
2.80
2.85
2.90
2.95
3.00
3.05
3.10
Rev.B.03
5
6
7
8
9
10
192.00
96.00
64.00
48.00
38.40
32.00
27.43
24.00
21.33
19.20
17.45
16.00
14.77
13.71
12.80
12.00
11.29
10.67
10.11
9.60
9.14
8.73
8.35
8.00
7.68
7.38
7.11
6.86
6.62
6.40
6.19
6.00
5.82
5.65
5.49
5.33
5.19
5.05
216.00
108.00
72.00
54.00
43.20
36.00
30.86
27.00
24.00
21.60
19.64
18.00
16.62
15.43
14.40
13.50
12.71
12.00
11.37
10.80
10.29
9.82
9.39
9.00
8.64
8.31
8.00
7.71
7.45
7.20
6.97
6.75
6.55
6.35
6.17
6.00
5.84
5.68
240.00
120.00
80.00
60.00
48.00
40.00
34.29
30.00
26.67
24.00
21.82
20.00
18.46
17.14
16.00
15.00
14.12
13.33
12.63
12.00
11.43
10.91
10.43
10.00
9.60
9.23
8.89
8.57
8.28
8.00
7.74
7.50
7.27
7.06
6.86
6.67
6.49
6.32
R2(K Ohm)=(1.2*R1(K Ohm))/(Vout-1.2)
Vout
1.20
1.25
4
330
N/A
N/A
24.00
12.00
8.00
6.00
4.80
4.00
3.43
3.00
2.67
2.40
2.18
2.00
1.85
1.71
1.60
1.50
1.41
1.33
1.26
1.20
1.14
1.09
1.04
1.00
0.96
0.92
0.89
0.86
0.83
0.80
0.77
0.75
0.73
0.71
0.69
0.67
0.65
0.63
48.00
24.00
16.00
12.00
9.60
8.00
6.86
6.00
5.33
4.80
4.36
4.00
3.69
3.43
3.20
3.00
2.82
2.67
2.53
2.40
2.29
2.18
2.09
2.00
1.92
1.85
1.78
1.71
1.66
1.60
1.55
1.50
1.45
1.41
1.37
1.33
1.30
1.26
72.00
36.00
24.00
18.00
14.40
12.00
10.29
9.00
8.00
7.20
6.55
6.00
5.54
5.14
4.80
4.50
4.24
4.00
3.79
3.60
3.43
3.27
3.13
3.00
2.88
2.77
2.67
2.57
2.48
2.40
2.32
2.25
2.18
2.12
2.06
2.00
1.95
1.89
96.00
48.00
32.00
24.00
19.20
16.00
13.71
12.00
10.67
9.60
8.73
8.00
7.38
6.86
6.40
6.00
5.65
5.33
5.05
4.80
4.57
4.36
4.17
4.00
3.84
3.69
3.56
3.43
3.31
3.20
3.10
3.00
2.91
2.82
2.74
2.67
2.59
2.53
120.00
60.00
40.00
30.00
24.00
20.00
17.14
15.00
13.33
12.00
10.91
10.00
9.23
8.57
8.00
7.50
7.06
6.67
6.32
6.00
5.71
5.45
5.22
5.00
4.80
4.62
4.44
4.29
4.14
4.00
3.87
3.75
3.64
3.53
3.43
3.33
3.24
3.16
144.00
72.00
48.00
36.00
28.80
24.00
20.57
18.00
16.00
14.40
13.09
12.00
11.08
10.29
9.60
9.00
8.47
8.00
7.58
7.20
6.86
6.55
6.26
6.00
5.76
5.54
5.33
5.14
4.97
4.80
4.65
4.50
4.36
4.24
4.11
4.00
3.89
3.79
168.00
84.00
56.00
42.00
33.60
28.00
24.00
21.00
18.67
16.80
15.27
14.00
12.92
12.00
11.20
10.50
9.88
9.33
8.84
8.40
8.00
7.64
7.30
7.00
6.72
6.46
6.22
6.00
5.79
5.60
5.42
5.25
5.09
4.94
4.80
4.67
4.54
4.42
9
AME
AME8850
600mA CMOS LDO
n External Resistor Divider Table (contd.)
Note: If VOUT=1.2V then R1=0 Ω and max value of R2 is 300KΩ .
R1
(K Ohm)
Vout
1.25
1
2
3
4
6
7
8
9
10
192.00
96.00
64.00
48.00
38.40
32.00
27.43
24.00
21.33
19.20
17.45
16.00
14.77
13.71
12.80
12.00
11.29
10.67
10.11
9.60
9.14
8.73
8.35
8.00
7.68
7.38
7.11
6.86
6.62
6.40
6.19
6.00
5.82
5.65
5.49
5.33
5.19
5.05
216.00
108.00
72.00
54.00
43.20
36.00
30.86
27.00
24.00
21.60
19.64
18.00
16.62
15.43
14.40
13.50
12.71
12.00
11.37
10.80
10.29
9.82
9.39
9.00
8.64
8.31
8.00
7.71
7.45
7.20
6.97
6.75
6.55
6.35
6.17
6.00
5.84
5.68
240.00
120.00
80.00
60.00
48.00
40.00
34.29
30.00
26.67
24.00
21.82
20.00
18.46
17.14
16.00
15.00
14.12
13.33
12.63
12.00
11.43
10.91
10.43
10.00
9.60
9.23
8.89
8.57
8.28
8.00
7.74
7.50
7.27
7.06
6.86
6.67
6.49
6.32
R2(K Ohm)=(1.2*R1(K Ohm))/(Vout-1.2)
24.00
48.00
72.00
96.00
1.30
12.00
24.00
36.00
48.00
1.35伍 豐 明
8.00
年 每 16.00
股 EPS挑24.00
戰 11元32.00
1.40
6.00
伍
12.00
豐
18.00
24.00
1.45
4.80
9.60
14.40
19.20
1.50
4.00
8.00
12.00
16.00
1.55
3.43
6.86
10.29
13.71
1.60
3.00
6.00
9.00
12.00
1.65
2.67
5.33
8.00
10.67
1.70
2.40
4.80
7.20
9.60
1.75
2.18
4.36
6.55
8.73
1.80
2.00
4.00
6.00
8.00
1.85
1.85
3.69
5.54
7.38
1.90
1.71
3.43
5.14
6.86
1.95
1.60
3.20
4.80
6.40
2.00
1.50
3.00
4.50
6.00
2.05
1.41
2.82
4.24
5.65
2.10
1.33
2.67
4.00
5.33
2.15
1.26
2.53
3.79
5.05
2.20
1.20
2.40
3.60
4.80
2.25
1.14
2.29
3.43
4.57
2.30
1.09
2.18
3.27
4.36
2.35
1.04
2.09
3.13
4.17
2.40
1.00
2.00
3.00
4.00
2.45
0.96
1.92
2.88
3.84
2.50
0.92
1.85
2.77
3.69
2.55
0.89
1.78
2.67
3.56
2.60
0.86
1.71
2.57
3.43
2.65
0.83
1.66
2.48
3.31
2.70
0.80
1.60
2.40
3.20
2.75
0.77
1.55
2.32
3.10
2.80
0.75
1.50
2.25
3.00
2.85
0.73
1.45
2.18
2.91
2.90
0.71
1.41
2.12
2.82
2.95
0.69
1.37
2.06
2.74
3.00
0.67
1.33
2.00
2.67
3.05
0.65
1.30
1.95
2.59
3.10
0.63
1.26
1.89
2.53
10
5
120.00
60.00
40.00
30.00
24.00
20.00
17.14
15.00
13.33
12.00
10.91
10.00
9.23
8.57
8.00
7.50
7.06
6.67
6.32
6.00
5.71
5.45
5.22
5.00
4.80
4.62
4.44
4.29
4.14
4.00
3.87
3.75
3.64
3.53
3.43
3.33
3.24
3.16
144.00
72.00
48.00
36.00
28.80
24.00
20.57
18.00
16.00
14.40
13.09
12.00
11.08
10.29
9.60
9.00
8.47
8.00
7.58
7.20
6.86
6.55
6.26
6.00
5.76
5.54
5.33
5.14
4.97
4.80
4.65
4.50
4.36
4.24
4.11
4.00
3.89
3.79
168.00
84.00
56.00
42.00
33.60
28.00
24.00
21.00
18.67
16.80
15.27
14.00
12.92
12.00
11.20
10.50
9.88
9.33
8.84
8.40
8.00
7.64
7.30
7.00
6.72
6.46
6.22
6.00
5.79
5.60
5.42
5.25
5.09
4.94
4.80
4.67
4.54
4.42
Rev.B.03
AME
AME8850
600mA CMOS LDO
n External Resistor Divider Table
R1
(K Ohm)
1
2
3
Rev.B.03
5
6
7
8
9
10
4.92
4.80
4.68
4.57
4.47
4.36
4.27
4.17
4.09
4.00
3.92
3.84
3.76
3.69
3.62
3.56
3.49
3.43
3.37
3.31
3.25
3.20
3.15
3.10
3.05
3.00
2.95
2.91
2.87
2.82
2.78
2.74
2.70
2.67
2.63
2.59
2.56
2.53
5.54
5.40
5.27
5.14
5.02
4.91
4.80
4.70
4.60
4.50
4.41
4.32
4.24
4.15
4.08
4.00
3.93
3.86
3.79
3.72
3.66
3.60
3.54
3.48
3.43
3.37
3.32
3.27
3.22
3.18
3.13
3.09
3.04
3.00
2.96
2.92
2.88
2.84
6.15
6.00
5.85
5.71
5.58
5.45
5.33
5.22
5.11
5.00
4.90
4.80
4.71
4.62
4.53
4.44
4.36
4.29
4.21
4.14
4.07
4.00
3.93
3.87
3.81
3.75
3.69
3.64
3.58
3.53
3.48
3.43
3.38
3.33
3.29
3.24
3.20
3.16
R2(K Ohm)=(1.2*R1(K Ohm))/(Vout-1.2)
Vout
3.15
3.20
3.25
3.30
3.35
3.40
3.45
3.50
3.55
3.60
3.65
3.70
3.75
3.80
3.85
3.90
3.95
4.00
4.05
4.10
4.15
4.20
4.25
4.30
4.35
4.40
4.45
4.50
4.55
4.60
4.65
4.70
4.75
4.80
4.85
4.90
4.95
5.00
4
0.62
0.60
0.59
0.57
0.56
0.55
0.53
0.52
0.51
0.50
0.49
0.48
0.47
0.46
0.45
0.44
0.44
0.43
0.42
0.41
0.41
0.40
0.39
0.39
0.38
0.37
0.37
0.36
0.36
0.35
0.35
0.34
0.34
0.33
0.33
0.32
0.32
0.32
1.23
1.20
1.17
1.14
1.12
1.09
1.07
1.04
1.02
1.00
0.98
0.96
0.94
0.92
0.91
0.89
0.87
0.86
0.84
0.83
0.81
0.80
0.79
0.77
0.76
0.75
0.74
0.73
0.72
0.71
0.70
0.69
0.68
0.67
0.66
0.65
0.64
0.63
1.85
1.80
1.76
1.71
1.67
1.64
1.60
1.57
1.53
1.50
1.47
1.44
1.41
1.38
1.36
1.33
1.31
1.29
1.26
1.24
1.22
1.20
1.18
1.16
1.14
1.13
1.11
1.09
1.07
1.06
1.04
1.03
1.01
1.00
0.99
0.97
0.96
0.95
2.46
2.40
2.34
2.29
2.23
2.18
2.13
2.09
2.04
2.00
1.96
1.92
1.88
1.85
1.81
1.78
1.75
1.71
1.68
1.66
1.63
1.60
1.57
1.55
1.52
1.50
1.48
1.45
1.43
1.41
1.39
1.37
1.35
1.33
1.32
1.30
1.28
1.26
3.08
3.00
2.93
2.86
2.79
2.73
2.67
2.61
2.55
2.50
2.45
2.40
2.35
2.31
2.26
2.22
2.18
2.14
2.11
2.07
2.03
2.00
1.97
1.94
1.90
1.87
1.85
1.82
1.79
1.76
1.74
1.71
1.69
1.67
1.64
1.62
1.60
1.58
3.69
3.60
3.51
3.43
3.35
3.27
3.20
3.13
3.06
3.00
2.94
2.88
2.82
2.77
2.72
2.67
2.62
2.57
2.53
2.48
2.44
2.40
2.36
2.32
2.29
2.25
2.22
2.18
2.15
2.12
2.09
2.06
2.03
2.00
1.97
1.95
1.92
1.89
4.31
4.20
4.10
4.00
3.91
3.82
3.73
3.65
3.57
3.50
3.43
3.36
3.29
3.23
3.17
3.11
3.05
3.00
2.95
2.90
2.85
2.80
2.75
2.71
2.67
2.62
2.58
2.55
2.51
2.47
2.43
2.40
2.37
2.33
2.30
2.27
2.24
2.21
11
AME
AME8850
600mA CMOS LDO
Ground Current vs. Input Voltage
Load Step (1mA-600mA)
Vo(10mV/DIV)
45
85 OC
35
30
25
Output
C L=2.2µF
CIN=2.2µF
O
25 C
20
15
伍 豐 明 年 每 股 EPS挑 戰 11元
伍豐
10
5
0
0
1
2
3
4
5
6
7
8
IL(200mA/DIV)
Ground Current (µ A)
40
I Load
0
Input Voltage (V)
TIME (20mS/DIV)
Drop Out Voltage vs. Output Voltage
Power Supply Rejection Ratio
0
1400
Top to Bottom
ILOAD=600mA
ILOAD=500mA
ILOAD=400mA
ILOAD=300mA
ILOAD=200mA
ILOAD=100mA
1000
800
600
-10
-40
-50
10mA
100mA
-60
-70
1
2
3
4
5
6
10
1mA
1K
100K
10M
Frequency (Hz)
Safe Operating Area
Noise Measurement
8850AEHA
8850AEVA
600
Vo (1mV DIV)
8850AEEV
100
10
0.1
100 µ A
100 µ A
-80
Output Voltage (V)
Output Current (mA)
-30
400
200
1.0
Input-Output Voltage Differential (V)
12
100mA
CL=2.2µF Tantalum
Tantalum
C BYP=0
-20
PSRR (dB)
Dr op Out Voltage (mV)
1200
C L=2.2µF
No Filter
8.0
TIME (20ms/DIV)
Rev.B.03
AME
AME8850
600mA CMOS LDO
Current Limit Response
I OU T (200mA/DIV)
VOUT (1V/DIV)
Overtemperature Shutdown
0
IOUT (200mA/DIV)
VOUT (1V/D IV)
RLOAD=6.6 Ω
0
TIME (0.5Sec/DIV)
TIME (2mS/DIV)
C L=2µF
R L=10Ω
0
VOUT (1V/DIV)
Output (1V/DIV)
C LOAD=2.2µF
C IN=1µF
R LOAD <100mΩ
Chip Enable Transient Response
Enable (2V/DIV)
Short Circuit Response
IOUT (200mV/DIV)
C LOAD =2.2µF
C IN=1.0µF
RLOAD=3.3Ω
VOUTNOM =3.3V
TIME (2mS/DIV)
0
TIME (1mS/DIV)
VOUT (10mV/DIV)
V IN (1V/DIV)
Line Transient Response
C LOAD=2.2µF
ILOAD =1mA
VOUTDC=3.3V
VINDC=4.5V
TIME (200mS/DIV)
Rev.B.03
13
AME
AME8850
600mA CMOS LDO
n Date Code Rule
Marking
Date Code
Year
A
A
A
W
W
xxx0
A
A
A
W
W
xxx1
A
A
A
W
W
xxx2
A
W
W
伍 豐A明 年 每A股 EPS
挑 戰 11
元
伍豐 W
A
A
A
W
xxx3
A
A
A
W
W
xxx5
A
A
A
W
W
xxx6
A
A
A
W
W
xxx7
A
A
A
W
W
xxx8
A
A
A
W
W
xxx9
xxx4
n Tape and Reel Dimension
DFN-8C
(3mmx3mmx0.75mm)
P
PIN 1
W
AME
AME
Carrier Tape, Number of Components Per Reel and Reel Size
14
Package
Carrier Width (W)
Pitch (P)
Part Per Full Reel
Reel Size
DFN-8C
(3x3x0.75mm)
12.0±0.1 mm
4.0±0.1 mm
3000pcs
330±1 mm
Rev.B.03
AME
AME8850
600mA CMOS LDO
n Tape and Reel Dimension
SOT-25
P
W
AME
AME
PIN 1
Carrier Tape, Number of Components Per Reel and Reel Size
Package
Carrier Width (W)
Pitch (P)
Part Per Full Reel
Reel Size
SOT-25
8.0±0.1 mm
4.0±0.1 mm
3000pcs
180±1 mm
TSOT-25
P
W
AME
AME
PIN 1
Carrier Tape, Number of Components Per Reel and Reel Size
Rev.B.03
Package
Carrier Width (W)
Pitch (P)
Part Per Full Reel
Reel Size
TSOT-25
8.0±0.1 mm
4.0±0.1 mm
3000pcs
180±1 mm
15
AME
AME8850
600mA CMOS LDO
n Tape and Reel Dimension
SOP-8
P
PIN 1
伍 豐 明 年 每 股 EPS挑 戰 11元
伍豐
W
AME
AME
Carrier Tape, Number of Components Per Reel and Reel Size
Package
Carrier Width (W)
Pitch (P)
Part Per Full Reel
Reel Size
SOP-8
12.0±0.1 mm
4.0±0.1 mm
2500pcs
330±1 mm
n Package Dimension
SOP-8
Top View
Side View
C
E
H
SYMBOLS
PIN 1
θ
D
Front View
MAX
MIN
MAX
A
1.35
1.75
0.05315
0.0689
A1
0.10
0.30
0.00394 0.01181
A
A2
16
A1
e
B
1.473 REF
0.05799 REF
B
0.33
0.51
0.01299 0.02008
C
0.19
0.25
0.00748 0.00984
D
4.80
5.33
0.18898 0.20984
E
3.80
4.00
0.14961 0.15748
1.27 BSC
e
o
7 (4X)
INCHES
MIN
A2
L
MILLIMETERS
0.05000 BSC
L
0.40
1.27
0.01575 0.05000
H
5.80
6.30
0.22835 0.24803
y
-
0.10
θ
0
o
8
o
0
o
0.00394
8
o
Rev.B.03
AME
AME8850
600mA CMOS LDO
n Package Dimension
SOT-25
Top View
Side View
D
θ1
SYMBOLS
MILLIMETERS
MIN
1.20REF
E
H
A
PIN 1
L
e
0.0472REF
0.15
0.0000
0.0059
b
0.30
0.55
0.0118
0.0217
D
2.70
3.10
0.1063
0.1220
E
1.40
1.80
0.0551
0.0709
1.90 BSC
2.60
θ1
S1
0.07480 BSC
3.00
0.37BSC
L
0
o
10
0.10236 0.11811
0.0146BSC
o
0o
10o
0.95BSC
0.0374BSC
MILLIMETERS
INCHES
A1
A
MAX
0.00
H
Front View
MIN
A1
e
S1
MAX
INCHES
b
TSOT-25
Top View
Side View
D
E
H
θ1
PIN 1
L
S1
SYMBOLS
MIN
MAX
MIN
MAX
A+A1
0.90
1.25
0.0354
0.0492
b
0.30
0.50
0.0118
0.0197
D
2.70
3.10
0.1063
0.1220
E
1.40
1.80
0.0551
0.0709
e
H
e
L
θ1
Front View
2.40
3.00
0.35BSC
0o
10o
0.95BSC
0.07480 BSC
0.09449 0.11811
0.0138BSC
0o
10o
0.0374BSC
b
Rev.B.03
A1
A
S1
1.90 BSC
17
AME
AME8850
600mA CMOS LDO
n Package Dimension
DFN-8C (3mmx3mmx0.75mm)
b
D
e
L
伍 豐 明 年 每 股 EPS挑 戰 11元
伍豐
E
E1
PIN #1
TOP VIEW
D1
BOTTOM VIEW
A
G1
G
REAR VIEW
SYMBOLS
18
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
A
0.700
0.800
0.028
0.031
D
2.900
3.100
0.114
0.122
E
2.900
3.100
0.114
0.122
e
0.600
0.700
0.024
0.028
D1
2.200
2.400
0.087
0.094
E1
1.400
1.600
0.055
0.063
b
0.200
0.320
0.008
0.013
L
0.375
0.575
0.015
0.023
G
0.153
0.253
0.0060
0.010
G1
0.000
0.050
0.0000
0.002
Rev.B.03
www.ame.com.tw
E-Mail: [email protected]
Life Support Policy:
These products of AME, Inc. are not authorized for use as critical components in life-support
devices or systems, without the express written approval of the president
of AME, Inc.
AME, Inc. reserves the right to make changes in the circuitry and specifications of its devices and
advises its customers to obtain the latest version of relevant information.
 AME, Inc. , November 2008
Document: 2095-DS8850-B.03
Corporate Headquarter
AME, Inc.
2F, 302 Rui-Guang Road, Nei-Hu District
Taipei 114, Taiwan, R.O.C.
Tel : 886 2 2627-8687
Fax: 886 2 2659-2989