AME AME5145 n General Description 1.6 MHz Boost Converter With 30V Internal FET Switch n Typical Application The AME5145 switching regulator is current-mode boost converters operating at fixed frequency of 1.6 MHz. The use of SOT-25/TSOT-25, DFN-8C & MSOP-8 packages, made possible by the minimal power loss of the internal 1.8A switch, and use of small inductor and capacitors result in the industry's highest power density. The 30V internal switch makes these solutions perfect for boosting to voltages up to 30V. These parts have a logic-level shutdown pin that can be used to reduce quiescent current and extend battery life. Protection is provided through cycle-by-cycle current limiting and thermal shutdown. Internal compensation simplifies and reduces component count. L/6.8µH D1 VIN IN EN R3 51K AME5145 EN l 1.6 MHz Switching Frequency l Low RDSON DMOS FET l Switch Current Up to 1.8A R1 43K GND C1 4.7µF R2 13.3K GND CF 680pF C2 22µF Figure 1. 4.2V to 5V Boost Converter L/10µH D1 VIN IN EN R3 51K VOUT SW 12V 400mA 5V AME5145 EN l Wide Input Voltage Range (2.7V-5.5V) FB R1 117K GND l Low Shutdown Current (<1µA) C1 4.7µF l SOT-25/TSOT-25, DFN-8C & MSOP-8 Packages l Uses Tiny Capacitors and Inductor FB VOUT 5V 800mA 4.2V n Features l 30V DMOS FET Switch SW R2 13.3K GND CF 220pF C2 4.7µF l Cycle-by-Cycle Current Limiting l All AME's Lead Free Products Meet RoHS Figure 2. 5V to 12V Boost Converter Standards n Applications l White LED Current Source l PDA's and Palm-Top Computers L/10µH IN SW EN R3 51K AME5145 EN l Local Boost Regulator FB VOUT 18V 250mA 5V l Digital Cameras l Portable Phones and Games D1 V IN R1 183K GND C1 4.7µF GND R2 13.3K CF 160pF C2 4.7µF Figure 3. 5V to 18V Boost Converter Rev.B.01 1 AME 1.6 MHz Boost Converter with 30V Internal FET Switch AME5145 n Function Block Diagram EN SW VIN SHUTDOWN CIRCUITRY R5 THERMAL SHUTDOWN R6 + Q1 Q2X8 - R + Gm RAMP GENERATOR FB Σ - Q R DRIVER R S RC R3 oscillator CURRENT LIMIT COMP CC + R4 - GND Figure 4. Functional Block Diagram 2 Rev.B.01 AME 1.6 MHz Boost Converter With 30V Internal FET Switch AME5145 n Pin Configuration SOT-25/TSOT-25 Top View 5 MSOP-8 Top View AME5145AEEV 4 AME5145 8 7 6 5 1. SW 1. IN 2. GND 2. EN 3. FB 3. GND 4. EN AME5145 5. IN 1 2 AME5145AEQA 4. FB 5. SW 3 6. SW 7. GND 8. GND 1 * Die Attach: Conductive Epoxy 2 3 4 * Die Attach: Conductive Epoxy DFN-8C (3mmx3mmx0.75mm) Top View AME5145AEVA 8 7 6 5 1. NC 2. FB 3. NC 4. SW AME5145 5. NC 6. IN 1 2 3 4 7. EN 8. NC * Die Attach: Conductive Epoxy Note: The trapezoid area enclosed by dashed line represents Exposed Pad and is GND. Rev.B.01 3 AME 1.6 MHz Boost Converter with 30V Internal FET Switch AME5145 n Pin Description (Continued) AME5145AEEV SOT-25/TSOT-25 Pin Number Pin Name Pin Description 1 SW Power Switch input. This is the drain of the internal NMOS power switch. Minimize the metal trace area connected to this pin to minimize EMI. 2 GND Ground. Tie directly to ground plane. Output voltage feedback input. Set the output voltage by selecting values for R1 and R2 using: 3 FB V R 1 = R 2 out − 1 1 . 23 V Connect the ground of the feedback network to a GND plane. 4 EN Enable, active high. The enable pin is an active high control. Tie this pin above 2V to enable the device. Tie this pin below 0.4V to turn off the device. 5 IN Analog and Power input. Input Supply Pin. Place bypass capacitor as close to VIN as possible. AME5145AEQA MSOP-8 Pin Number Pin Name 1 IN 2 EN 3 GND Pin Description Analog and Power input. Input Supply Pin. Place bypass capacitor as close to VIN as possible. Enable, active high. The enable pin is an active high control. Tie this pin above 2V to enable the device. Tie this pin below 0.4V to turn off the device. Ground. Tie directly to ground plane. Output voltage feedback input. Set the output voltage by selecting values for R1 and R2 using: 4 4 FB V R 1 = R 2 out − 1 1 . 23 V Connect the ground of the feedback network to a GND plane. Power Switch input. This is the drain of the internal NMOS power switch. Minimize the metal trace area connected to this pin to minimize EMI. Power Switch input. This is the drain of the internal NMOS power switch. Minimize the metal trace area connected to this pin to minimize EMI. 5 SW 6 SW 7 GND Ground. Tie directly to ground plane. 8 GND Ground. Tie directly to ground plane. Rev.B.01 AME 1.6 MHz Boost Converter With 30V Internal FET Switch AME5145 n Pin Description AME5145AEVA DFN-8C(3mmx3mmx0.75mm) Pin Number Pin Name 1 NC Pin Description Not Connected Output voltage feedback input. Set the output voltage by selecting values for R1 and R2 using: 2 FB V R 1 = R 2 out − 1 1 . 23 V Connect the ground of the feedback network to a GND plane. 3 Rev.B.01 NC Not Connected 4 SW Power Switch input. This is the drain of the internal NMOS power switch. Minimize the metal trace area connected to this pin to minimize EMI. 5 NC Not Connected 6 IN Analog and Power input. Input Supply Pin. Place bypass capacitor as close to VIN as possible. 7 EN Enable, active high. The enable pin is an active high control. Tie this pin above 2V to enable the device. Tie this pin below 0.4V to turn off the device. 8 NC Not Connected 5 AME 1.6 MHz Boost Converter with 30V Internal FET Switch AME5145 n Ordering Information AME5145 x x x x xxx x - x Special Feature2 Special Feature1 Output Voltage Number of Pins Package Type Operating Ambient Temperature Range Pin Configuration Pin Configuration A (SOT-25) (TSOT-25) A (DFN-8C) A (MSOP-8) 6 1. SW 2. GND 3. FB 4. EN 5. IN Operating Ambient Temperature Range E: -40OC to +85OC Package Type E: SOT-2X V: DFN Q: MSOP Number of Pins V: 5 A: 8 Output Voltage ADJ: Adjustable Special Feature1 Lead free & Y: Low profile Special Feature2 (For DFN package only) 3: 3x3x0.75(mm) (LxWxH) (For TSOT-25 only) Z: Lead free 1. NC 2. FB 3. NC 4. SW 5. NC 6. IN 7. EN 8. NC 1. IN 2. EN 3. GND 4. FB 5. SW 6. SW 7. GND 8. GND Rev.B.01 AME 1.6 MHz Boost Converter With 30V Internal FET Switch AME5145 n Ordering Information Part Number Marking* Output Voltage Package Operating Ambient Temperature Range AME5145AEEVADJZ BLLww ADJ SOT-25 -40OC to +85OC AME5145AEEVADJY BLLww ADJ TSOT-25 -40OC to +85OC AME5145AEVAADJZ-3 BLN yyww ADJ DFN-8C -40OC to +85OC AME5145AEQAADJZ 5145 Ayww ADJ MSOP-8 -40OC to +85OC Note: ww & yyww represents the date code and pls refer to Date Code Rule. * A line on top of the first letter represents lead free plating such as BLLww. Please consult AME sales office or authorized Rep./Distributor for the availability of package type. Rev.B.01 7 AME 1.6 MHz Boost Converter with 30V Internal FET Switch AME5145 n Absolute Maximum Ratings Parameter Input Supply Voltage EN, FB Voltages SW Voltage Symbol Maximum Unit VIN 6 V VEN ,V FB VIN V VSW 30 V B* ESD Classification Caution: Stress above the listed absolute maximum rating may cause permanent damage to the device. * HBM B:2000V~3999V n Recommended Operating Conditions Parameter Symbol Rating Ambient Temperature Range TA -40 to +85 Junction Temperature Range TJ -40 to +125 Storage Temperature Range TSTG -65 to +150 Unit o C n Thermal Information Parameter Package Die Attach Symbol SOT-25 / TSOT-25 Thermal Resistance* (Junction to Case) Maximum Unit 81 θ JC MSOP-8 DFN-8C 100 17 o SOT-25 / TSOT-25 Thermal Resistance (Junction to Ambient) MSOP-8 Conductive Epoxy θJA 206 DFN-8C 125 SOT-25 / TSOT-25 400 Internal Power Dissipation C/W 260 MSOP-8 DFN-8C PD 625 mW 800 Maximum Junction Temperature 150 Solder Iron (10 Sec)** 350 o C * Measure θJC on backside center of molding compund if IC has no tab. 8 ** MIL-STD-202G 210F Rev.B.01 AME 1.6 MHz Boost Converter With 30V Internal FET Switch AME5145 n Electrical Specifications VIN = 5V, EN = VIN, TA= 25oC, I L = 0A, unless otherwise noted. Parameter Input Voltage Symbol Test Condition Min VIN 2.7 O Switch Current Limit ICL TA = 25 C TA = -40 to +85 C 0.4 TA = -40 to +85 C TA = 25 C 0.5 TA = -40 to +85oC Ω 0.8 2 1.23 1.255 V 60 500 nA Feedback Pin Bias Current IFB VFB = 1.23V 1.205 TA = 25oC FB = 1.15V (Switching) 3 o TA = -40 to +85 C IQ TA = 25oC 500 o TA = -40 to +85 C EN = 0V UVP Rising Edge Over Temperature Protection OTP VIN =2.7V to 5.5V mA 400 VIN = 5V Undervoltage Lockout µA 2 VIN = 5V FB = 1.3V (Not Switching) 2.15 OTP Hysteresis Temperature 1 µA 2.35 2.55 V 160 o C 20 o C 2.7V <= VIN <= 5.5V Switching Frequency fSW VIN =3V, TA = -40 to +85oC 1 1.6 Maximum Duty Cycle DMAX VIN =3V, TA = -40 to +85oC 86 93 ISW EN = 0V 0.02 0.1 TA = -40 to +85oC µA 0.01 ∆VFB ∆VIN Rev.B.01 0.7 0 VIN = 3V EN Threshold 0.6 EN = 5V VFB EN Input Threshold (Low) (Shutdown) EN Input Threshold (High) (Enable the device) A 0 Feedback Pin Reference Voltage Switch Leakage V EN = 0V IEN FB Voltage Line Regulation 5.5 0.7 O EN Pin Bias Current Shutdown Current Units 1.8 o RDSON Max 1.2 TA = 25OC VIN = 3.3V Quiescent Current 1.5 o VIN = 5V Switch ON Resistance Typ %V 1.85 MHz % 2 µA 0.4 V TA = -40 to +85oC 2 9 AME AME5145 1.6 MHz Boost Converter with 30V Internal FET Switch n Detailed Description n Application Hints The AME5145 is a switching converter IC that operates at a fixed frequency (1.6MHz) for fast transient response over a wide input voltage range and incorporates pulse-bypulse current limiting protection. Operation can be best understood by referring to Figure 4. Because this is current mode control, a 33mΩ sense resistor in series with the switch FET is used to provide a voltage (which is proportional to the FET current) to both the input of the pulse width modulation (PWM) comparator and the current limit amplifier. Selecting The External Capacitors At the beginning of each cycle, the S-R latch turns on the FET. As the current through the FET increases, a voltage (proportional to this current) is summed with the ramp coming from the ramp generator and then fed into the input of the PWM comparator. When this voltage exceeds the voltage on the other input (coming from the Gm amplifier), the latch resets and turns the FET off. Since the signal coming from the Gm amplifier is derived from the feedback (which samples the voltage at the output), the action of the PWM comparator constantly sets the correct peak current through the FET to keep the output voltage in regulation. Q1 and Q2 align with R3 - R6 form a bandgap voltage reference used by the IC to hold the output in regulation. The currents flowing through Q1 and Q2 will be equal, and the feedback loop will adjust the regulated output to maintain this. Because of this, the regulated output is always maintained at a voltage level equal to the voltage at the FB node "multiplied up" by the ratio of the output resistive divider. The current limit comparator feeds directly into the flipflop that drives the switch FET. If the FET current reaches the limit threshold, the FET is turned off and the cycle terminated until the next clock pulse. The current limit input terminates the pulse regardless of the status of the output of the PWM comparator. 10 The best capacitors for use with the AME5145 are multilayer Ceramic capacitors. They have the lowest ESR (equivalent series resistance) and highest resonance frequency, which makes them optimum for use with high frequency switching Converters. When selecting a ceramic capacitor, only X5R and X7R dielectric types should be used. Other types such as Z5U and Y5F have such severe loss of capacitance due to effects of temperature variation and applied voltage, they may provide as little as 20% of rated capacitance in many typical applications. Always consult capacitor manufacturer’ s data curves before selecting a capacitor. High-quality ceramic capacitors can be obtained from Taiyo-Yuden, AVX, and Murata. Selecting The Output Capacitor A single ceramic capacitor of value 4.7µF to 10µF will provide sufficient output capacitance for most applications. If larger amounts of capacitance are desired for improved line support and transient response, tantalum capacitors can be used. Aluminum electrolytic with ultra low ESR such as Sanyo Oscon can be used, but are usually prohibitively expensive. Typical AI electrolytic capacitors are not suitable for switching frequencies above 500kHz due to significant ringing and temperature rise due to self-heating from ripple current. An output capacitor with excessive ESR can also reduce phase margin and cause instability. In general, if electrolytic are used, it is recommended that. They be paralleled with ceramic capacitors to reduce ringing, switching losses, and output voltage ripple. Selecting The Input Capacitor An input capacitor is required to serve as an energy reservoir for the current which must flow into the coil each time the switch turns ON. This capacitor must have extremely low ESR, so ceramic is the best choice. We recommend a nominal value of 4.7µF, but larger values can be used. Since this capacitor reduces the amount of voltage ripple seen at the input pin, it also reduces the amount of EMI passed back along that line to other circuitry. Rev.B.01 AME 1.6 MHz Boost Converter With 30V Internal FET Switch AME5145 n Application Hints Feed-Forward Compensation Layout Hints Although internally compensated, the feed-forward capacitor Cf is required for stability. Adding this capacitor puts a zero in the loop response of the Converter. The recommended frequency for the zero fz should be approximately 6kHz. Cf can be calculated using the formula: Cf = 1 / (2 x π x R1 x fz) Selecting Diodes The external diode used in the typical application should be a Schottky diode. A 20V diode such as the MBR0520 is recommended. The MBR05XX series of diodes are designed to handle a maximum average current of 0.5A. For applications exceeding 0.5A average but less than 1A, a Microsemi UPS5817 can be used. Layout Hints High frequency switching regulators require very careful layout of components in order to get stable operation and low noise. All components must be as close as possible to the AME5145 device. It is recommended that a 4-layer PCB be used so that internal ground planes are available. As an example, a recommended layout of components is shown: Recommended PCB Component Layout (Bottom) Some additional guidelines to be observed: 1. Keep the path between L1, D1, and C2 extremely short. Parasitic trace inductance in series with D1 and C2 will increase noise and ringing. 2. The feedback components R1, R2 and CF must be kept close to the FB pin of U1 to prevent noise injection on the FB pin trace. 3. If internal ground planes are available use vias to connect directly to ground at pin 2 of U1, as well as the negative sides of capacitors C1 and C2. Duty Cycle The maximum duty cycle of the switching regulator determines the maximum boost ratio of output-to-input voltage that the converter can attain in mode of operation. The duty cycle for a given boost application is defined as: This applies for continuous mode operation. D= VOUT + VDIODE - V IN VOUT + VDIODE - VSW Recommended PCB Component Layout (Top) Rev.B.01 11 AME 1.6 MHz Boost Converter with 30V Internal FET Switch AME5145 n Application Hints Calculating Load Current Shutdown Pin Operation The load current is related to the average inductor current by the relation: The device is turned off by pulling the shutdown pin low. If this function is not going to be used, the pin should be tied directly to V IN. If the SHDN function will be needed, a pull-up resistor must be used to VIN (approximately 50k100k recommended). The EN pin must not be left unterminated. ILOAD = IIND (AVG) x (1 - D) Where “ D” is the duty cycle of the application. The switch current can be found by: ISW = IIND (AVG) + 1 /2 (IRIPPLE) Inductor ripple current is dependent on inductance, duty cycle, input voltage and frequency: IRIPPLE = D x (V IN-V SW) / (f x L) Combining all terms, we can develop an expression which allows the maximum available load current to be calculated: ILOAD = ( 1-D ) x ( ISW (max) - D ( VIN-VSW ) ) 2fL Thermal Consuderations At higher duty cycles, the increased ON time of the FET means the maximum output current will be determined by power dissipation within the AME5145 FET switch. The switch power dissipation from ON-state conduction is calculated by: P(SW) = D x IIND(AVE)2 x RDS(ON) There will be some switching losses as well, so some derating needs to be applied when calculating IC power dissipation. Inductor Suppliers Recommended suppliers of inductors for this product include, but are not limited to Sumida, Coilcraft, Panasonic, TDK and Murata. When selecting an inductor, make certain that the continuous current rating is high enough to avoid saturation at peak currents. A suitable core type must be used to minimize core (switching) losses, and wire power losses must be considered when selecting the current rating. 12 Rev.B.01 AME 1.6 MHz Boost Converter With 30V Internal FET Switch AME5145 IQ VIN(Active) vs Temperature Feedback Voltage vs Temperature 1.240 3. 50 1.235 Feedback Voltage (V) IQ VIN Active (mA) 3. 00 2. 50 2. 00 1.50 1.00 0.50 1.230 1.225 1.220 1.215 1.210 1.205 0.00 -50 -25 0 25 50 75 100 125 1.200 -50 150 -25 0 Temperature (°C) VIN = 5V 125 2.5 2.3 2.1 1.9 1.7 -25 0 25 50 75 100 125 1.5 -50 150 -25 0 VIN = 5V 93.1 VIN = 3.3V 92.1 91.1 -25 0 25 50 75 Temperature (°C) 50 75 100 125 150 Feedback Bias Current vs Temperature Feedback Bias Current(µA) 95.1 94.1 25 Temperature(°C) Max. Duty Cycle vs Temperature Max Duty Cycle (%) 100 2.7 V IN = 3.3V 96.1 Rev.B.01 75 2.9 Temperature(°C) 90.1 -50 50 Current Limit vs Temperature Current Limit(A) Osc illa tor Fre quenc y (MH z) Oscillator Frequency vs Temperature 1.59 1.57 1.55 1.53 1.51 1.49 1.47 1.45 1.43 1.41 1.39 1.37 1.35 1.33 1.31 1.29 1.27 1.25 -50 25 Temperature(°C) 100 125 150 0.19 0.18 0.17 0.16 0.15 0.14 0.13 0.12 0.11 0.10 0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0.00 -50 -25 0 25 50 75 100 125 150 Temperature (°C) 13 AME 1.6 MHz Boost Converter with 30V Internal FET Switch AME5145 RDS(on) vs Temperature IQ VIN (Idle) vs Temperature 800 500 600 400 RDS(ON) (mΩ) I Q VIN (Idle) (µA) 700 300 200 500 400 300 200 100 100 0 1 2 3 0 -50 5 4 -25 0 Temperature(°C) 25 75 50 100 125 150 Temperature (°C) RDS(ON) vs VIN RDS(ON) vs Temperature 750 700 650 800 700 600 550 500 450 400 350 300 RDS(ON ) (mΩ) RDS(ON) (mΩ) 600 250 500 400 300 200 150 200 100 50 0 2.5 100 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 0 -50 8 - 25 VIN (V) 90 80 80 70 70 Efficiency (%) Efficiency (%) 100 90 60 50 40 30 20 10 125 150 50 40 30 0 200 Load Current (mA) 14 100 60 250 VIN = 4.2V, VOUT = 5V 10 0 150 75 20 VIN = 2.7V, VOUT = 5V 100 50 Efficiency vs Load Current 100 50 25 Temperature (°C) Efficiency vs Load Current 0 0 300 0 200 400 600 800 1000 1200 1400 Load Current (mA) Rev.B.01 AME 1.6 MHz Boost Converter With 30V Internal FET Switch AME5145 Efficiency vs Load Current Efficiency vs Load Current 100 90 80 80 Efficiency (%) Effi ci en cy (%) 70 60 50 40 30 20 VIN = 3.3V, VOUT = 12V 10 20 40 60 80 100 120 140 60 50 40 30 20 VIN = 3.3V, VOUT = 5V 10 0 0 70 0 160 0 Load Current (mA) 100 200 400 300 500 600 700 Load Current (mA) Efficiency vs Load Current Efficiency vs Load Current 80 90 70 80 Efficiency (%) Effi ciency (%) 90 60 50 40 30 20 10 20 30 40 50 40 30 VIN = 5V, V OUT = 12V 10 0 0 60 20 VIN = 2.7V, VOUT = 12V 10 70 0 50 0 5.20 90 5.15 5.10 Output Voltage (V) Efficiency (%) 80 70 60 50 40 30 20 0 50 100 150 200 Load (mA) Rev.B.01 250 300 400 500 600 300 VIN = 2.7V VIN = 4.2V 5.05 5.00 4.95 4.90 VIN = 3.3V 4.85 4.80 4.75 4.70 VIN= 5V, VOUT =18V 0 200 Output Voltage vs Load Current Efficiency vs Load Current 100 10 100 Load Current (mA) Load Current (mA) VOUT = 12V 4.65 350 4.60 0 100 200 300 400 500 600 700 800 900 1000 1100 1200 IOUT (mA) 15 AME 1.6 MHz Boost Converter with 30V Internal FET Switch AME5145 Output Voltage vs Load Current Output Voltage vs Load Current 19 12.2 Output Voltage (V) Output Voltage (V) 12.4 VIN = 3.3V VIN = 5V 12.0 VIN = 5V 18 17 VIN = 2.7V VOUT = 12V VOUT = 12V 11.8 0 50 100 150 200 250 IOUT (mA) 16 300 350 400 16 0 50 100 150 200 250 300 350 IOUT (mA) Rev.B.01 AME 1.6 MHz Boost Converter With 30V Internal FET Switch AME5145 n Date Code Rule Marking Date Code Year A A A W W xxx0 A A A W W xxx1 A A A W W xxx2 A A A W W xxx3 A A A W W xxx4 A A A W W xxx5 A A A W W xxx6 A A A W W xxx7 A A A W W xxx8 A A A W W xxx9 n Tape and Reel Dimension SOT-25 P W AME AME PIN 1 Carrier Tape, Number of Components Per Reel and Reel Size Rev.B.01 Package Carrier Width (W) Pitch (P) Part Per Full Reel Reel Size SOT-25 8.0±0.1 mm 4.0±0.1 mm 3000pcs 180±1 mm 17 AME 1.6 MHz Boost Converter with 30V Internal FET Switch AME5145 n Tape and Reel Dimension TSOT-25 P W AME AME PIN 1 Carrier Tape, Number of Components Per Reel and Reel Size Package Carrier Width (W) Pitch (P) Part Per Full Reel Reel Size TSOT-25 8.0±0.1 mm 4.0±0.1 mm 3000pcs 180±1 mm DFN-8C (3mmx3mmx0.75mm) P PIN 1 W AME AME Carrier Tape, Number of Components Per Reel and Reel Size 18 Package Carrier Width (W) Pitch (P) Part Per Full Reel Reel Size DFN-8C (3x3x0.75mm) 12.0±0.1 mm 4.0±0.1 mm 3000pcs 330±1 mm Rev.B.01 AME 1.6 MHz Boost Converter With 30V Internal FET Switch AME5145 n Tape and Reel Dimension MSOP-8 P PIN 1 W AME AME Carrier Tape, Number of Components Per Reel and Reel Size Rev.B.01 Package Carrier Width (W) Pitch (P) Part Per Full Reel Reel Size MSOP-8 12.0±0.1 mm 4.0±0.1 mm 4000pcs 330±1 mm 19 AME 1.6 MHz Boost Converter with 30V Internal FET Switch AME5145 n Package Dimension SOT-25 Top View Side View SYMBOLS D MILLIMETERS MIN θ1 1.20REF E H A PIN 1 L S1 0.0472REF 0.15 0.0000 0.0059 b 0.30 0.55 0.0118 0.0217 D 2.70 3.10 0.1063 0.1220 E 1.40 1.80 0.0551 0.0709 1.90 BSC e θ1 2.60 0.07480 BSC 3.00 0.37BSC 0 o 0.10236 0.11811 0.0146BSC 10 o 0o 10o 0.95BSC 0.0374BSC MILLIMETERS INCHES S1 A1 A MAX 0.00 L Front View MIN A1 H e MAX INCHES b TSOT-25 Top View Side View D E H θ1 PIN 1 L S1 SYMBOLS MIN MAX MIN MAX A+A1 0.90 1.25 0.0354 0.0492 b 0.30 0.50 0.0118 0.0197 D 2.70 3.10 0.1063 0.1220 E 1.40 1.80 0.0551 0.0709 H e 1.90 BSC e 2.40 θ1 0 o 10 0.95BSC 0.09449 0.11811 0.0138BSC o 0 o 10 o 0.0374BSC b 20 A1 A S1 3.00 0.35BSC L Front View 0.07480 BSC Rev.B.01 AME 1.6 MHz Boost Converter With 30V Internal FET Switch AME5145 n Package Dimension DFN-8C (3mmx3mmx0.75mm) b D e L E E1 PIN #1 TOP VIEW D1 BOTTOM VIEW A G1 G REAR VIEW SYMBOLS Rev.B.01 MILLIMETERS INCHES MIN MAX MIN MAX A 0.700 0.800 0.028 0.031 D 2.900 3.100 0.114 0.122 E 2.900 3.100 0.114 0.122 e 0.600 0.700 0.024 0.028 D1 2.200 2.400 0.087 0.094 E1 1.400 1.600 0.055 0.063 b 0.200 0.320 0.008 0.013 L 0.375 0.575 0.015 0.023 G 0.153 0.253 0.0060 0.010 G1 0.000 0.050 0.0000 0.002 21 AME 1.6 MHz Boost Converter with 30V Internal FET Switch AME5145 n Package Dimension MSOP-8 Top View DETAIL A SYMBOLS D e1 TOP PKG. BTM PKG. E1 E θ L2 L L1 PIN 1 I. D (SHINNY SURFACE) R0.127(0. 005) TYP ALL CORNER & EDGES Front View A1 e INCHES MIN MAX MIN MAX A - 1.10 - 0.04330 A1 0.00 0.20 0.000 0.008 A2 0.75 0.95 0.029 0.037 b 0.28 0.38 0.011 0.015 b1 0.28 0.33 0.011 0.013 c 0.13 0.23 0.005 0.009 c1 0.13 0.17 0.005 0.006 D 2.90 3.10 0.114 0.122 E 4.77 4.98 0.188 0.196 E1 2.90 3.10 0.114 0.122 e 0.65 TYP 0.0255 TYP e1 1.95 TYP 0.0767 TYP L A A2 MILLIMETERS 0.40 0.80 0.01574 0.03149 L1 0.94 REF 0.037 REF L2 0.254 TYP 0.010 TYP θ 0 o 8 o 0 o 8 o b End View SECTION BB b b1 BASE METAL B c B E1 c1 WITH PLATING See Detail A 22 Rev.B.01 www.ame.com.tw E-Mail: [email protected] Life Support Policy: These products of AME, Inc. are not authorized for use as critical components in life-support devices or systems, without the express written approval of the president of AME, Inc. AME, Inc. reserves the right to make changes in the circuitry and specifications of its devices and advises its customers to obtain the latest version of relevant information. AME, Inc. , March 2010 Document: 1049-DS5145-B.01 Corporate Headquarter AME, Inc. 2F, 302 Rui-Guang Road, Nei-Hu District Taipei 114, Taiwan, R.O.C. Tel: 886 2 2627-8687 Fax: 886 2 2659-2989