BAT46 150mA Axial Leaded Schottky Barrier Diodes Features · For general purpose applications. · This diode features very low turn-on voltage and B A A fast switching. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges · This diode is also available in the MiniMELF case with type designations LL46. · Pb / RoHS Free C D DO-35 Dim Min A 25.40 ¾ B ¾ 4.00 C ¾ 0.60 D ¾ 2.00 Mechanical Data · Case: DO-35 Glass Case · Weight: approx. 0.13g Max All Dimensions in mm Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified Parameter Symbol Value Unit VRRM 100 V IF 150(1) mA Repetitive Peak Forward Current at tp < 1s, IFRM 350(1) mA Forward Surge Current at tp < 10 ms, IFSM 750(1) mA Power Dissipation ,Ta = 65 °C PD Repetitive Peak Reverse Voltage Continuous Forward Current Thermal Resistance Junction to Ambient Air Junction Temperature Ambient Operating Temperature Range Storage temperature range Parameter Reverse Breakdown Voltage Reverse Current Pulse Test tp <300µs , δ <2% Forward Voltage Pulse Test tp <300µs , δ <2% Diode Capacitance V(BR)R IR VF Cd 0.3(1) °C/W 125 °C Ta TS -65 to + 125 °C IR = 100 µA (pulsed) VR = 10 V VR = 50 V VR = 75 V IF = 10mA IF = 250mA VR = 1V, f = 1MHz Note: (1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature. 1 of2 mW RθJA TJ Test Condition Symbol 150 (1) °C -65 to + 150 Min Typ Max Unit 100 - 6 0.8 2.0 5.0 0.45 1.00 - V µA V pF Typical Forward Characteristics 250 1000 200 100 Forward Current , IF (mA) Power Dissipation , PD (mW) Admissible Power Dissipation vs. Ambient Temperature 150 100 10 1 0.1 50 0 0.01 0 100 200 0 Typical Reverse Characteristics 100 10 TJ = 60°C 1 TJ = 25°C 0.1 0 20 40 60 80 0.2 0.4 0.6 0.8 1.0 Forward Voltage , VF (V) Ambient Temperature , Ta (°C) Reverse Current , IR (µA) TJ = 25°C 100 Percent of Voltage , (%) 2 of 2 1.2