0.2A Axial Leaded Schottky Barrier Diodes

BAT86
0.2A Axial Leaded Schottky Barrier Diodes
Features
· For general purpose applications
· This diodes features very low turn-on voltage
and fast switching. This devices are protected
by a PN junction guard ring against excessive
voltage, such as electrostatic discharges
· Metal silicon schottky barrier device which is protected
by a PN junction guard ring. The low forward voltage
drop and fast switching make it ideal for protection of
MOS devices,steering,biasing and coupling diodes for
fast switching and low logic level applications
B
A
A
C
D
DO-35
Dim
Min
Max
A
25.40
¾
· Case:JEDEC DO--35,glass case
B
¾
4.00
· Polarity: Color band denotes cathode end
C
¾
0.60
· Weight: Approx. 0.13 gram
D
¾
2.00
Mechanical Data
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
@ TA = 25°C unless otherwise specified
Symbols
VR
Continuous reverse voltage
Forw ard continuous current
@
IF
TA=25
Repetitive peak forw ard current @ tp<1s,
IFRM
<=0.5,TA=25
P tot
Pow er dissipation @ TA=25
Value
UNITS
50.0
V
200
1)
mA
500
1)
mA
200
1)
mw
Junction temperature
TJ
125
Ambient operating temperature range
TA
c-55 ---+ 125
TSTG
c-55 ---+ 150
Storage temperature range
Reverse breakdow n voltage tested w ith 100
Forw ard voltage
Pulse test tp<300
@ IF=0.1mA
@ IF=1mA
@ IF=10mA
@ IF=30mA
@ IF=100mA
A pulses
Symbols
Min.
VR
50.0
Typ.
Max.
UNITS
V
s, <2%
VF
0.2
0.275
0.365
0.46
0.7
0.3
0.38
0.45
0.6
0.9
Leakage current V R=40V
IR
5.0
Junction capacitance at V R=1V,f=1MHz
CJ
8
Reverse recovery time form IF=10mA to IR=10mA to IR=1mA
trr
5
Thermal resistance junction to ambient air
RθJA
1)Valid provided that leads at a distance of 4mm from case are kept at ambient temperature
1 of 1
300
V
V
V
V
V
A
pF
ns
1)
/W