BAT86 0.2A Axial Leaded Schottky Barrier Diodes Features · For general purpose applications · This diodes features very low turn-on voltage and fast switching. This devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges · Metal silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices,steering,biasing and coupling diodes for fast switching and low logic level applications B A A C D DO-35 Dim Min Max A 25.40 ¾ · Case:JEDEC DO--35,glass case B ¾ 4.00 · Polarity: Color band denotes cathode end C ¾ 0.60 · Weight: Approx. 0.13 gram D ¾ 2.00 Mechanical Data All Dimensions in mm Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified Symbols VR Continuous reverse voltage Forw ard continuous current @ IF TA=25 Repetitive peak forw ard current @ tp<1s, IFRM <=0.5,TA=25 P tot Pow er dissipation @ TA=25 Value UNITS 50.0 V 200 1) mA 500 1) mA 200 1) mw Junction temperature TJ 125 Ambient operating temperature range TA c-55 ---+ 125 TSTG c-55 ---+ 150 Storage temperature range Reverse breakdow n voltage tested w ith 100 Forw ard voltage Pulse test tp<300 @ IF=0.1mA @ IF=1mA @ IF=10mA @ IF=30mA @ IF=100mA A pulses Symbols Min. VR 50.0 Typ. Max. UNITS V s, <2% VF 0.2 0.275 0.365 0.46 0.7 0.3 0.38 0.45 0.6 0.9 Leakage current V R=40V IR 5.0 Junction capacitance at V R=1V,f=1MHz CJ 8 Reverse recovery time form IF=10mA to IR=10mA to IR=1mA trr 5 Thermal resistance junction to ambient air RθJA 1)Valid provided that leads at a distance of 4mm from case are kept at ambient temperature 1 of 1 300 V V V V V A pF ns 1) /W