BL GALAXY ELECTRICAL SMALL SIGNAL SCHOTTKY DIODES SD103A - - - SD103C VOLTAGE RANGE: 40 -- 20 V CURRENT: 400 mW FEATURES DO - 35(GLASS) For general purpose applications Metal silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices,steering,biasing and coupling diodes for fast switching and low logic level applications MECHANICAL DATA Case:JEDEC DO--35,glass case Polarity: Color band denotes cathode end Weight: Approx. 0.13 gram ABSOLUTE RATINGS(LIMITING VALUES) Symbols SD103A SD103B SD103C UNITS Peak reverse voltage VRRM 40 30 20 V Pow er dissipation (Infinite Heat Sink) Ptot 4001) Single cycle surge 60Hz sine w ave I FSM 15 A Forward continuous current I(AV) 350 mA Junction tenperature TJ 125 TSTG -55 ---+ 150 Storage temperature range mW 1)Valid provided that leads at a distance of 4mm from case are kept at ambient temperature ELECTRICAL CHARACTERISTICS (Ratings at 25 ambient temperature unless otherw ise specified) Reverse breakdow n voltage @ IR=10 A SD103A SD103B SD103C Leakage current @ VR=50V SD103A,VR=30V SD103B,VR=20V SD103C,VR=10V Forw ard voltage drop @ IF=20mA I F=200mA Junction capacitance @ VR=0V,f=1MHz Reverse recovery time @ IF=IR=50mA to 200mA,recover to 0.1 IR Thermal resistance junction to ambient air Symbols Min. Typ. Max. UNITS VR 40 30 20 - - V IR - - 5 μA VF - - CJ trr - 50 10 RθJA - 250 0.37 0.6 - V pF ns K/W www.galaxycn.com Document Number 0265011 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES FIG.1 -- TYPICAL VARIATION OF FWD. CURRENT VS FWD. XXXXXXXX-VOLTAGE FOR PRIMARY CONDUCTION THROUGH THE XXXXXXXX-SCHOTTKY BARRIER SD103A - - - SD103C FIG.2 -- TYPICAL FORWARD CONDUCTION CURVE OF XXXXX COMBINATION SCHOTTKY BARRIER AND PN XXXXX JUNCTION GUARD RING 5 1000 1000.000 – Forward Current (A) 4 10 10.000 1 1.000 2 F 0.100 0.1 3 1 I I F – Forward Current ( mA) 100 100.000 0.010 0.01 0 0.0 0.001 0 0.5 100 200 300 400 500 600 700 800 900 1000 V F – Forward Voltage ( mV ) FIG.3 -- TYPICAL VARIATION OF REVERSE CURRENT AT XXXXXXXXX VARIATION TEMPERATURES 1.5 2.0 FIG.4 -- TYPICAL CAPACITANCE CURVE AS A JUNCTION OF REVERSE VOLTAGE 10000 30 CD – Diode Capacitance ( pF ) I R – Reverse Current (A ) 1.0 V F – Forward Voltage ( V ) 1000 100 10 1 f=1MHz 25 20 15 10 5 0 0 20 40 60 80 100 120 140 160 Tj – Junction Temperature ( °C ) 0 5 10 15 20 25 30 V R – Reverse Voltage ( V ) www.galaxycn.com Document Number 0265011 BLGALAXY ELECTRICAL 2.