BAT47 350mA Axial Leaded Schottky Barrier Diodes Features · For general purpose applications · These diodes features very low turn-on voltage and fast switching. · These devices are protected by a PN junction guard ring against B A A excessive voltage, such as electrostatic discharges. · This diode is also available in the MiniMELF case with the type designation Ll47. ·High temperature soldering guaranteed:260℃/10 seconds at terminals ·Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC C D Mechanical Data DO-35 · Case: DO-35 glass case · Polarity: Color band denotes cathodes end · Weight: Approx. 0.13 gram Dim Min Max A 25.40 ¾ B ¾ 4.00 C ¾ 0.60 D ¾ 2.00 All Dimensions in mm Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified Value Symbols Repetitive Peak Reverse Voltage VRRM IF IFRM IFSM Ptot TJ TA TSTG Forward Continuous Current at TA=25 C Repetitive Peak Forward Current at tp 1s, d<0.5 Surge forward current at tp 10ms , Power Dissipation at TA=25 C TA=25 C TA=65 C Junction temperature Ambient Operating temperature Range Storage Temperature Range Symbols Reverse breakdown voltage Tested with 10mA Pulses Forward voltage Pulse Test tp<300ms,d< 2% at IF=0.1mA, at IF=10mA, at IF=300mA Leakage current pulse test tp 300ms ,d 2% at VR=10V at VR=10V, TJ=60℃ at VR=20V at VR=20V, TJ=60°C Capacitance at VR=1V ,f=1MHz Thermal resistance junction to ambient Air Min. V(BR)R Units V mA 20 350 1) 1 1) A A mW 7.5 1) 3301) 125 C -65 to+125 C -65 to+150 C Typ. Max. Unis V 20 VF VF VF 0.25 0.40 1.0 V V V IR IR IR IR CJ RqJA 4 20 10 30 mA mA mA mA 300 1) K/W pF 12 1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature(DO-35) 1 of 1