SSF20N50UH Main Product Characteristics VDSS 500V RDS(on) 0.2Ω (typ.) ID 20A ① TO-247 Schematic Diagram Assignment Features and Benefits Marking and Pin Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery Description These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. Absolute Max Rating Parameter Max. ID @ TC = 25°C Symbol Continuous Drain Current, VGS @ 10V 20 ① ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 12.6 ① IDM Pulsed Drain Current ② 80 Power Dissipation ③ 250 W Linear Derating Factor 2.0 W/°C VDS Drain-Source Voltage 500 V VGS Gate-to-Source Voltage ± 30 V EAS Single Pulse Avalanche Energy @ L=6.5mH 1433 mJ IAS Avalanche Current @ L=6.5mH 21 A -55 to +150 °C PD @TC = 25°C TJ TSTG Operating Junction and Storage Temperature Range ©Silikron Semiconductor CO.,LTD. 2013.12.20 www.silikron.com Version : 1.0 Units A page 1 of 8 SSF20N50UH Thermal Resistance Symbol Characteristics Typ. Max. Units RθJC Junction-to-case ③ — 0.5 ℃/W RθJA Junction-to-ambient (t ≤ 10s) ④ — 50 ℃/W Electrical Characteristics @TA=25℃ unless otherwise specified Symbol Parameter Min. V(BR)DSS Drain-to-Source breakdown voltage RDS(on) Static Drain-to-Source on-resistance VGS(th) Gate threshold voltage IDSS Drain-to-Source leakage current IGSS Gate-to-Source forward leakage Qg Typ. Max. Units V 500 — — — 0.2 0.27 — 0.47 — 2 — 4 — 1.4 — — — 1 — — 50 — — 100 — — -100 Total gate charge — 48 — Qgs Gate-to-Source charge — 16 — Qgd Gate-to-Drain("Miller") charge — 13 — td(on) Turn-on delay time — 18 — tr Rise time — 64 — td(off) Turn-Off delay time — 51 — tf Fall time — 49 — Ciss Input capacitance — 2778 — Coss Output capacitance — 350 — Crss Reverse transfer capacitance — 3.1 — Ω V μA nA Conditions VGS = 0V, ID = 250μA VGS=10V,ID = 10A TJ = 125°C VDS = VGS, ID = 250μA TJ = 125°C VDS = 500V,VGS = 0V TJ = 125°C VGS = 30V VGS = -30V ID = 20A, nC VDS=400V, VGS = 10V ns VGS=10V, VDS =250V, RGEN=3.9Ω, RL=12Ω VGS = 0V pF VDS = 25V ƒ = 1MHz Source-Drain Ratings and Characteristics Symbol IS ISM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Min. Typ. Max. Units — — 20 ① A — — 80 A Conditions MOSFET symbol showing the integral reverse p-n junction diode. VSD Diode Forward Voltage — 1.0 1.4 V IS=20A, VGS=0V trr Reverse Recovery Time — 570 — nS TJ = 25°C, IF =20A, Qrr Reverse Recovery Charge — 7.35 — μC di/dt = 100A/μs ©Silikron Semiconductor CO.,LTD. 2013.12.20 www.silikron.com Version : 1.0 page 2 of 8 SSF20N50UH Test circuits and Waveforms EAS Test Circuit Gate charge test circuit Switching Time Test Circuit Switching Waveforms Notes: ①Calculated continuous current based on maximum allowable junction temperature. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C ©Silikron Semiconductor CO.,LTD. 2013.12.20 www.silikron.com Version : 1.0 page 3 of 8 SSF20N50UH Typical electrical and thermal characteristics Figure 2. Gate to source cut-off voltage Figure 1.Typical Output Characteristics Figure 3. Drain-to-Source Breakdown Voltage Vs. Case Temperature ©Silikron Semiconductor CO.,LTD. Figure 4.Normalized On-Resistance Vs. Case Temperature 2013.12.20 www.silikron.com Version : 1.0 page 4 of 8 SSF20N50UH Typical electrical and thermal characteristics Figure 5. Maximum Drain Current Vs. Case Figure 6. Typical Capacitance Vs. Drain-to-Source Temperature Voltage Figure7. Drain-to-Source Voltage Vs. Gate-to-Source Voltage Figure8. Maximum Effective Transient Thermal Impedance, Junction-to-Case ©Silikron Semiconductor CO.,LTD. 2013.12.20 www.silikron.com Version : 1.0 page 5 of 8 SSF20N50UH Mechanical Data: TO247 PACKAGE OUTLINE DIMENSION Symbol A A1 A2 b b2 b4 c D D1 D2 E E1 E2 E3 e h L L1 ΦP ΦP1 ΦP2 Q S R T T1 T2 T3 U θ1 θ2 θ3 θ4 Min 4.900 2.310 1.900 1.160 1.960 2.960 0.590 20.900 16.250 1.050 15.700 13.100 4.900 2.400 Dimension In Millimeters Nom 5.000 2.410 2.000 1.210 2.010 3.010 0.610 21.000 16.550 1.200 15.800 13.300 5.000 2.500 5.44BSC Max 5.100 2.510 2.100 1.260 2.060 3.060 0.660 21.100 16.850 1.350 15.900 13.500 5.100 2.600 Min 0.193 0.091 0.075 0.046 0.077 0.117 0.023 0.823 0.640 0.041 0.618 0.516 0.193 0.094 Dimension In Inches Nom 0.197 0.095 0.079 0.048 0.079 0.119 0.024 0.827 0.652 0.047 0.622 0.524 0.197 0.098 0.214BSC Max 0.201 0.099 0.083 0.050 0.081 0.120 0.026 0.831 0.663 0.053 0.626 0.531 0.201 0.102 0.050 19.800 - 0.100 19.920 - 0.150 20.100 4.300 0.002 0.780 - 0.004 0.784 - 0.006 0.791 0.169 3.500 2.400 5.600 3.600 2.500 5.800 6.15BSC 0.50BSC 3.700 7.300 2.600 6.000 0.138 0.094 0.220 0.142 0.098 0.228 0.242BSC 0.020BSC 0.146 0.287 0.102 0.236 9.800 1.65REF 8.00REF 12.80REF 10.200 0.386 0.065REF 0.315REF 0.504REF 0.402 6.000 6° 4° 1° 14° 7° 5° 15° 6.400 8° 6° 1.5° 16° 0.236 6° 4° 1° 14° 7° 5° 15° 0.252 8° 6° 1.5° 16° ©Silikron Semiconductor CO.,LTD. 2013.12.20 www.silikron.com Version : 1.0 page 6 of 8 SSF20N50UH Ordering and Marking Information Device Marking: SSF20N50UH Package (Available) TO-247 Operating Temperature Range C : -55 to 150 ºC Devices per Unit Package Type Units/ Tube Tubes/Inner Box Units/Inner Inner Box Boxes/Carton Box Units/Carton Box TO-247 30 11 330 1980 6 Reliability Test Program Test Item Conditions Duration Sample Size High Temperature Reverse Bias(HTRB) High Temperature Gate Bias(HTGB) Tj=125℃ to 150℃ @ 80% of Max VDSS/VCES/VR 168 hours 500 hours 1000 hours 3 lots x 77 devices Tj=150℃ @ 100% of Max VGSS 168 hours 500 hours 1000 hours 3 lots x 77 devices ©Silikron Semiconductor CO.,LTD. 2013.12.20 www.silikron.com Version : 1.0 page 7 of 8 SSF20N50UH ATTENTION: ■ ■ ■ ■ ■ ■ ■ ■ Any and all Silikron products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. 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Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Suzhou Silikron Semiconductor Corp. 11A, 428 Xinglong Street, Suzhou Industrial Park, P.R.China TEL: (86-512) 62560688 FAX: (86-512) 65160705 E-mail: [email protected] ©Silikron Semiconductor CO.,LTD. 2013.12.20 www.silikron.com Version : 1.0 page 8 of 8