SSBD10100CTD Main Product Characteristics: IF 2×5A VRRM 100V Tj(max) 150℃ Vf(max) 0.8V Features and Benefits: High Junction Temperature High ESD Protection High Forward & Reverse Surge capability Description: TO252 SSBD10100CTD Schottky Barrier Rectifier designed for high frequency switch model power supplies such as adaptors and DC/DC convertors; this product special design for high forward and reverse surge capability Absolute Rating: Symbol VRRM VR(RMS) Characterizes Value Unit Peak Repetitive Reverse Voltage 100 V RMS Reverse Voltage 70 V Per diode 5 A Per device 10 A IF(AV) Average Forward Current IFSM Non Repetitive Surge Forward Current(tp=8.3ms sinusoidal) 90 A IRRM Peak Repetitive Reverse Surge Current(Tp=2us) 0.5 A TJ Maximum operation Junction Temperature Range -50~150 ℃ Tstg Storage Temperature Range -50~150 ℃ Value Unit 5.5 ℃/W Thermal Resistance Symbol RθJC Characterizes Maximum Thermal Resistance Junction To Case TO252 Electrical Characterizes @TA=25℃ unless otherwise specified Symbol Characterizes VR Reverse Breakdown Voltage VF Forward Voltage Drop IR Leakage Current ©Silikron Semiconductor CO., LTD. Min Typ Max 100 V 0.8 0.75 0.1 5 2011.4.19 www.silikron.com Unit V mA Version: 1.0 Test Condition IR=0.5mA IF=5A, TJ=25℃ IF=5A, TJ=125℃ VR=100V, TJ=25℃ VR=100V, TJ=125℃ page 1of3 SSBD10100CTD I-V Curves： Figure 1：Typical Forward Characteristics Figure 2：Typical Reverse Characteristics ©Silikron Semiconductor CO., LTD. 2011.4.19 www.silikron.com Version: 1.0 page 2of3 SSBD10100CTD Mechanical Data： TO252: ©Silikron Semiconductor CO., LTD. 2011.4.19 www.silikron.com Version: 1.0 page 3of3