Datasheet - Silikron

 SSBD1045D Main Product Characteristics:
IF
10A
VRRM
45V
Tj(max)
150C
Vf(max)
0.55V
TO252 SSBD1045D Features and Benefits:
„
„
„
High Junction Temperature
High ESD Protection,
High Forward & Reverse Surge capability
Description:
Schottky Barrier Rectifier designed for high frequency
switch model power supplies such as adaptors and
DC/DC convertors; this product special design for high
forward and reverse surge capability
Absolute Rating:
Symbol
VRRM
VR(RMS)
Characterizes
Value
Unit
Peak Repetitive Reverse Voltage
45
V
RMS Reverse Voltage
31
V
10
A
150
A
2
A
IF(AV)
Average Forward Current
Per diode
IFSM
Non Repetitive Surge Forward Current(tp=8.3ms sinusoidal)
IRRM
Peak Repetitive Reverse Surge Current(Tp=2us/1KHZ)
TJ
Maximum operation Junction Temperature Range
-50~150
℃
Tstg
Storage Temperature Range
-50~150
℃
Value
Unit
TO220
2
℃/W
TO220F
4
℃/W
Thermal Resistance
Symbol
RθJC
RθJC
Characterizes
Maximum Thermal Resistance Junction To
Case
Electrical Characterizes @TA=25℃ unless otherwise specified
Symbol
Characterizes
Min
VR
Reverse Breakdown Voltage
VF
Forward Voltage Drop
IR
Leakage Current
Typ
Max
45
Unit
V
0.55
0.5
0.1
10
V
mA
Test Condition
IR=0.5mA
IF=10A, TJ=25℃
IF=10A, TJ=125℃
VR=45V, TJ=25℃
VR=45V, TJ=125℃
I-V Curves;
©Silikron Semiconductor CO.,LTD.
2009.12.1
www.silikron.com Version : 1.0
page
1of2
SSBD1045D Figure 1:Typical Forward Characteristics
Figure 2:Typical Reverse Characteristics
©Silikron Semiconductor CO.,LTD.
2009.12.1
www.silikron.com Version : 1.0
page
2of2