WSP10D100 Power Schottky Rectifier Features ■ 10A(1×5A),100V ■ VF(max)=0.60V(@TJ=125℃) ■ Low power loss, high efficiency ■ Common cathode structure ■ Guard ring for over voltage protection, High reliability ■ Maximum Junction Temperature Range(175℃) K General Description Dual center tap Schottky rectifiers suited for High frequency switch power supply and Free wheeling diodes, polarity protection A1 K applications. A2 TO220 Absolute Maximum Ratings Symbol Parameter Value Units VDRM Repetitive peak reverse voltage 100 V VDC Maximum DC blocking voltage 100 V IF(RMS) RMS forward current 10 A IF(AV) Average forward current IFSM Surge non repetitive forward current IRRM Repetitive peak reverse current dv/dt Critical rate of rise of reverse voltage TJ, Tstg per diode 5 per device 10 A 150 A 1 A 10000 V/ns Junction Temperature 175 ℃ Storage Temperature -40~150 ℃ Thermal Characteristics Symbol Parameter RQJC Thermal Resistance, Junction-to-Case RQCS Thermal Resistance, Case-to-Sink Value Units Min Typ Max - - 1.3 ℃/W 0.3 - - ℃/W Rev. C Nov.2008 Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved. T02-2 WSP10D100 Electrical Characteristics (per diode) Characteristics Reverse leakage current Symbol IR Test Condition VR = VRRM IF= 5A Forward voltage drop VF IF= 210A Tj = 25°C Min Typ. Max Unit - - 10 μA - 5 mA Tj = 125°C Tj = 25°C - 0.71 0.75 Tj = 125°C - 0.56 0.60 Tj = 25°C - 0.78 0.85 Tj = 125°C - 0.65 0.7 V Note :tp = 380 μs, δ < 2% 2/4 Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved. WSP10D100 Fig.1 Forward voltage drop versus forward current (maximum values, per diode). Fig.3 Junction capacitance versus reverse voltage applied (typical values, per diode). Fig.2 Average current versus ambient temperature (d=0.5) (per diode) Fig.4 Reverse leakage current versus reverse voltage applied (typical values, per diode).. 3/4 Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved. WSP10D100 TO-220 Package Dimension Unit: mm 4/4 Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved.