SSF1341 - Silikron

SSF1341
D
DESCRIPTION
The SSF1341 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 2.5V. This device is suitable
for use as a load switch or in PWM applications.
G
S
GENERAL FEATURES
Schematic diagram
● VDS = -12V,ID = -3.5A
RDS(ON) <85mΩ @ VGS=-2.5V
RDS(ON) <50mΩ @ VGS=-4.5V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Marking and pin Assignment
Application
●PWM applications
●Load switch
●Power management
SOT23 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
S41
SSF1341
SOT23
Tape width
Quantity
8 mm
3000 units
Ø180mm
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
-12
V
Gate-Source Voltage
VGS
±8
V
ID(25℃)
-3.5
A
ID(70℃)
-2.6
A
IDM
-14
A
PD
1.25
W
TJ,TSTG
-55 To 150
℃
RθJA
100
℃/W
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
Zero Gate Voltage Drain Current
IDSS
VDS=-12V,VGS=0V
-1
μA
Gate-Body Leakage Current
IGSS
VGS=±8V,VDS=0V
±100
nA
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SSF1341
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
VGS(th)
Drain-Source On-State Resistance
RDS(ON)
Forward Transconductance
VDS=VGS,ID=-250μA
gFS
-0.4
-1
VGS=-4.5V, ID=-3.5A
41
50
VGS=-2.5V, ID=-3A
51
85
VDS=-5V,ID=-2.8A
8
V
mΩ
S
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Clss
VDS=-8V,VGS=0V,
F=1.0MHz
1000
PF
200
PF
PF
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
150
Turn-on Delay Time
td(on)
20
29
nS
Turn-on Rise Time
tr
19
30
nS
39
58
nS
SWITCHING CHARACTERISTICS (Note 4)
Turn-Off Delay Time
VDD=-10V,ID=-1A
VGS=-4.5V,RGEN=6Ω
td(off)
Turn-Off Fall Time
tf
9
15
nS
Total Gate Charge
Qg
12
17
nC
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS=-8V,ID=-3.5A,VGS=-4.5V
1.5
nC
3
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=-1.7A
-0.8
-1.2
V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
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SSF1341
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ton
tr
td(on)
toff
tf
td(off)
90%
VOUT
90%
INVERTED
10%
10%
90%
VIN
50%
50%
10%
PULSE WIDTH
Figure 2:Switching Waveforms
PD Power(W)
-ID- Drain Current (A)
Figure 1:Switching Test Circuit
TJ-Junction Temperature(℃)
TJ-Junction Temperature(℃)
Figure 3 Power Dissipation
-ID- Drain Current (A)
Rdson On-Resistance(Ω)
Figure 4 Drain Current
-ID- Drain Current (A)
-Vds Drain-Source Voltage (V)
Figure 5 Output CHARACTERISTICS
©Silikron Semiconductor CO.,LTD.
Figure 6 Drain-Source On-Resistance
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-ID- Drain Current (A)
Normalized On-Resistance
SSF1341
TJ-Junction Temperature(℃)
Figure 7 Transfer Characteristics
Figure 8 Drain-Source On-Resistance
C Capacitance (pF)
Rdson On-Resistance(Ω)
-Vgs Gate-Source Voltage (V)
-Vds Drain-Source Voltage (V)
Figure 9 Rdson vs Vgs
Figure 10 Capacitance vs Vds
-Is- Reverse Drain Current (A)
-Vgs Gate-Source Voltage (V)
-Vgs Gate-Source Voltage (V)
Qg Gate Charge (nC)
-Vsd Source-Drain Voltage (V)
Figure 11 Gate Charge
©Silikron Semiconductor CO.,LTD.
Figure 12 Source- Drain Diode Forward
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-ID- Drain Current (A)
SSF1341
Vds Drain-Source Voltage (V)
Safe Operation Area
R(t),Normalized Effective
Transient Thermal Impedance
Figure 13
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
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SSF1341
SOT-23 PACKAGE INFORMATION
Dimensions in Millimeters (UNIT:mm)
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
Dimensions in Millimeters
MIN.
MAX.
0.900
1.150
0.000
0.100
0.900
1.050
0.300
0.500
0.080
0.150
2.800
3.000
1.200
1.400
2.250
2.550
0.950TYP
1.800
2.000
0.550REF
0.300
0.500
0°
8°
NOTES
1. All dimensions are in millimeters.
2. Tolerance ±0.10mm (4 mil) unless otherwise specified
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
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SSF1341
ATTENTION:
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Any and all Silikron products described or contained herein do not have specifications that can handle applications that require
extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can
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exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in
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This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change without notice.
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