Datasheet - Silikron

SSF2627
D
DESCRIPTION
The SSF2627 uses advanced trench technology to
provide excellent RDS(ON), low gate charge. It has
been optimized for power management applications
requiring a wide range of gave drive voltage ratings
(4.5V – 25V).
G
S
Schematic diagram
GENERAL FEATURES
●VDS = -20V,ID = -5.4A
RDS(ON) < 48mΩ @ VGS=-2.5V
RDS(ON) < 33mΩ @ VGS=-4.5V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Marking and pin Assignment
Application
●Battery protection
●Load switch
●Power management
SOP-8 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
SSF2627
SSF2627
SOP-8
Ø330mm
8mm
2500 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
-20
V
Gate-Source Voltage
VGS
±10
V
ID
-5.4
A
IDM
-28
A
PD
1.47
W
TJ,TSTG
-55 To 150
℃
RθJA
85
℃/W
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
Zero Gate Voltage Drain Current
IDSS
VDS=-20V,VGS=0V
-1
μA
Gate-Body Leakage Current
IGSS
VGS=±10V,VDS=0V
±100
nA
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SSF2627
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
VGS(th)
VDS=VGS, ID =-250μA
RDS(ON)
gFS
-0.40
-0.7
-1.50
V
VGS=-4.5V, ID =-5.4A
27
33
VGS=-2.5V, ID =-2.7A
38
48
VDS=-5V, ID =-5.4A
8
S
1350
PF
510
PF
mΩ
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Clss
VDS=-16V,VGS=0V,
F=1.0MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
200
PF
Turn-on Delay Time
td(on)
18
nS
Turn-on Rise Time
tr
25
nS
70
nS
55
nS
16
nC
3.5
nC
4
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn-Off Delay Time
VDD=-16V, ID =-1A
VGS=-4.5V,RGEN=6Ω
td(off)
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS=-16V,
ID=-5.4A,VGS=-4.5V
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=-1A
-0.8
-1
V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
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SSF2627
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ton
tr
td(on)
toff
tf
td(off)
90%
VOUT
90%
INVERTED
10%
10%
90%
VIN
50%
50%
10%
PULSE WIDTH
Figure 2:Switching Waveforms
PD Power(W)
-ID- Drain Current (A)
Figure 1:Switching Test Circuit
TJ-Junction Temperature(℃)
TJ-Junction Temperature(℃)
Figure 3 Power Dissipation
-ID- Drain Current (A)
Rdson On-Resistance(mΩ)
Figure 4 Drain Current
-ID- Drain Current (A)
-Vds Drain-Source Voltage (V)
Figure 5 Output CHARACTERISTICS
©Silikron Semiconductor CO.,LTD.
Figure 6 Drain-Source On-Resistance
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-ID- Drain Current (A)
Normalized On-Resistance
SSF2627
TJ-Junction Temperature(℃)
Figure 7 Transfer Characteristics
Figure 8 Drain-Source On-Resistance
C Capacitance (pF)
Rdson On-Resistance(mΩ)
-Vgs Gate-Source Voltage (V)
-Vds Drain-Source Voltage (V)
Figure 9 Rdson vs Vgs
Figure 10 Capacitance vs Vds
-Is- Reverse Drain Current (A)
-Vgs Gate-Source Voltage (V)
-Vgs Gate-Source Voltage (V)
Qg Gate Charge (nC)
-Vsd Source-Drain Voltage (V)
Figure 11 Gate Charge
©Silikron Semiconductor CO.,LTD.
Figure 12 Source- Drain Diode Forward
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-ID- Drain Current (A)
SSF2627
Vds Drain-Source Voltage (V)
Safe Operation Area
R(t),Normalized Effective
Transient Thermal Impedance
Figure 13
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
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SSF2627
SOP-8 PACKAGE INFORMATION
NOTES:
1. Dimensions are inclusive of plating
2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils.
3. Dimension L is measured in gauge plane.
4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
©Silikron Semiconductor CO.,LTD.
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SSF2627
ATTENTION:
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Any and all Silikron products described or contained herein do not have specifications that can handle applications that require
extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can
be reasonably expected to result in serious physical and/or material damage. Consult with your Silikron
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exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in
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This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change without notice.
©Silikron Semiconductor CO.,LTD.
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