SSF3626 DESCRIPTION The SSF3626 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. Schematic diagram GENERAL FEATURES ● VDS = 30V,ID =6.9A RDS(ON) < 51mΩ @ VGS=4.5V RDS(ON) < 35mΩ @ VGS=10V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Marking and pin Assignment Application ●PWM applications ●Load switch ●Power management SOP-8 top view PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Pcs/Tube Tube/Carton Box Pcs/Carton Box SSF3626 SSF3626 SOP-8 100 units 100 units 10000 units ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V ID(25℃) 6.9 A ID(70℃) 5.5 A IDM 30 A PD 2.8 W TJ,TSTG -55 To 150 ℃ RθJA 62.5 ℃/W Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage ©Silikron Semiconductor CO.,LTD. VGS=0V ID=250μA BVDSS 1 30 http://www.silikron.com V v1.0 SSF3626 Zero Gate Voltage Drain Current IDSS VDS=30V,VGS=0V 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 3 V Drain-Source On-State Resistance RDS(ON) ON CHARACTERISTICS (Note 3) Forward Transconductance gFS 1.5 VGS=4.5V, ID=4.9A 41 51 mΩ VGS=10V, ID=5.9A 25 35 mΩ VDS=10V,ID=5.9A 5 S 550 PF 100 PF DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Clss VDS=15V,VGS=0V, F=1.0MHz Output Capacitance Coss Reverse Transfer Capacitance Crss 50 PF Turn-on Delay Time td(on) 5 nS Turn-on Rise Time tr 25 nS 12 nS SWITCHING CHARACTERISTICS (Note 4) Turn-Off Delay Time td(off) VDS=15V,VGS=10V,RGEN=3..2Ω ID=4.7A Turn-Off Fall Time tf 10 nS Total Gate Charge Qg 9 nC Gate-Source Charge Qgs 1.8 nC Gate-Drain Charge Qgd 1.7 nC Body Diode Reverse Recovery Time Trr 20 nS 12 nC Body Diode Reverse Recovery Charge VDS=15V,ID=5.9A,VGS=10V IF=4.7A, dI/dt=100A/µs Qrr DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD VGS=0V,IS=4.7A 1 1.2 V NOTES: 1. 2. 3. 4. Repetitive Rating: Pulse width limited by maximum junction temperature. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. Guaranteed by design, not subject to production testing. ©Silikron Semiconductor CO.,LTD. 2 http://www.silikron.com v1.0 SSF3626 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Vdd Vgs R gen td(on) Rl V in D ton tr td(off) Vout 90% VOUT G toff tf 90% INVERTED 10% 10% 90% S VIN 50% 50% 10% PULSE WIDTH Figure 1: Switching Test Circuit ZthJA Normalized Transient Thermal Resistance Figure 2:Switching Waveforms Square Wave Pluse Duration(sec) Figure 3: Normalized Maximum Transient Thermal Impedance ©Silikron Semiconductor CO.,LTD. 3 http://www.silikron.com v1.0 SSF3626 SOP-8 PACKAGE INFORMATION NOTES： 1. 2. 3. 4. Dimensions are inclusive of plating Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. Dimension L is measured in gauge plane. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. ©Silikron Semiconductor CO.,LTD. 4 http://www.silikron.com v1.0 SSF3626 ATTENTION: ■ ■ ■ ■ ■ ■ ■ ■ Any and all Silikron products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your Silikron representative nearest you before using any Silikron products described or contained herein in such applications. Silikron assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all Silikron products described or contained herein. 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