Datasheet - Silikron

SSF3626
DESCRIPTION
The SSF3626 uses advanced trench
technology to provide excellent RDS(ON)
and low gate charge .This device is
suitable for use as a load switch or in
PWM applications.
Schematic diagram
GENERAL FEATURES
● VDS = 30V,ID =6.9A
RDS(ON) < 51mΩ @ VGS=4.5V
RDS(ON) < 35mΩ @ VGS=10V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Marking and pin Assignment
Application
●PWM applications
●Load switch
●Power management
SOP-8 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Pcs/Tube
Tube/Carton Box
Pcs/Carton Box
SSF3626
SSF3626
SOP-8
100 units
100 units
10000 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
V
ID(25℃)
6.9
A
ID(70℃)
5.5
A
IDM
30
A
PD
2.8
W
TJ,TSTG
-55 To 150
℃
RθJA
62.5
℃/W
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
©Silikron Semiconductor CO.,LTD.
VGS=0V ID=250μA
BVDSS
1
30
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SSF3626
Zero Gate Voltage Drain Current
IDSS
VDS=30V,VGS=0V
1
μA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
±100
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
3
V
Drain-Source On-State Resistance
RDS(ON)
ON CHARACTERISTICS (Note 3)
Forward Transconductance
gFS
1.5
VGS=4.5V, ID=4.9A
41
51
mΩ
VGS=10V, ID=5.9A
25
35
mΩ
VDS=10V,ID=5.9A
5
S
550
PF
100
PF
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Clss
VDS=15V,VGS=0V,
F=1.0MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
50
PF
Turn-on Delay Time
td(on)
5
nS
Turn-on Rise Time
tr
25
nS
12
nS
SWITCHING CHARACTERISTICS (Note 4)
Turn-Off Delay Time
td(off)
VDS=15V,VGS=10V,RGEN=3..2Ω
ID=4.7A
Turn-Off Fall Time
tf
10
nS
Total Gate Charge
Qg
9
nC
Gate-Source Charge
Qgs
1.8
nC
Gate-Drain Charge
Qgd
1.7
nC
Body Diode Reverse Recovery Time
Trr
20
nS
12
nC
Body Diode Reverse Recovery Charge
VDS=15V,ID=5.9A,VGS=10V
IF=4.7A, dI/dt=100A/µs
Qrr
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=4.7A
1
1.2
V
NOTES:
1.
2.
3.
4.
Repetitive Rating: Pulse width limited by maximum junction temperature.
Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec.
Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
Guaranteed by design, not subject to production testing.
©Silikron Semiconductor CO.,LTD.
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SSF3626
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Vdd
Vgs
R gen
td(on)
Rl
V in
D
ton
tr
td(off)
Vout
90%
VOUT
G
toff
tf
90%
INVERTED
10%
10%
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 1: Switching Test Circuit
ZthJA Normalized Transient
Thermal Resistance
Figure 2:Switching Waveforms
Square Wave Pluse Duration(sec)
Figure 3: Normalized Maximum Transient Thermal Impedance
©Silikron Semiconductor CO.,LTD.
3
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SSF3626
SOP-8 PACKAGE INFORMATION
NOTES:
1.
2.
3.
4.
Dimensions are inclusive of plating
Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils.
Dimension L is measured in gauge plane.
Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
©Silikron Semiconductor CO.,LTD.
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SSF3626
ATTENTION:
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