SSF6401 D DESCRIPTION The SSF6401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -0.4V. This device is suitable for use as a load switch or in PWM applications. G S Schematic diagram GENERAL FEATURES ● VDS = -20V,ID = -4.3A RDS(ON) < 85mΩ @ VGS=-2.5V RDS(ON) < 50mΩ @ VGS=-4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Marking and pin Assignment Application ●PWM applications ●Load switch ●Power management SOT-23 top view PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape width Quantity 6401 SSF6401 SOT-23 Ø180mm 8 mm 3000 units ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±12 V ID -4.3 A IDM -34 A PD 1.3 W TJ,TSTG -55 To 150 ℃ RθJA 100 ℃/W Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA -20 V Zero Gate Voltage Drain Current IDSS VDS=-20V,VGS=0V -1 μA Gate-Body Leakage Current IGSS VGS=±12V,VDS=0V ±100 nA ON CHARACTERISTICS (Note 3) ©Silikron Semiconductor CO.,LTD. 1 http://www.silikron.com v2.1 SSF6401 Gate Threshold Voltage VGS(th) Drain-Source On-State Resistance RDS(ON) Forward Transconductance VDS=VGS,ID=-250μA gFS -0.4 -1 VGS=-4.5V, ID=-4.3A 50 VGS=-2.5V, ID=-2.5A 85 VDS=-5V,ID=-4.3A V mΩ 7 S 740 PF 290 PF DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Clss VDS=-4V,VGS=0V, F=1.0MHz Output Capacitance Coss Reverse Transfer Capacitance Crss 190 PF Turn-on Delay Time td(on) 27 nS Turn-on Rise Time tr 60 nS 110 nS nS SWITCHING CHARACTERISTICS (Note 4) Turn-Off Delay Time VDD=-10V,ID=-1A RL=10Ω ,RGEN=6Ω td(off) Turn-Off Fall Time tf 80 Total Gate Charge Qg 7.8 Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=-4V,ID=-4.3A,VGS=-4.5V 15 nC 1.2 nC 1.6 nC DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD Diode Forward Current (Note 2) IS VGS=0V,IS=-3.3A -1.2 V -1.4 A NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. ©Silikron Semiconductor CO.,LTD. 2 http://www.silikron.com v2.1 SSF6401 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ton tr Vdd td(on) Rl Vin Vgs Rgen D 90% Vout toff tf td(off) VOUT 90% INVERTED G 10% 10% 90% VIN S 50% 50% 10% PULSE WIDTH Figure 2:Switching Waveforms PD Power(W) ID- Drain Current (A） Figure 1:Switching Test Circuit TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) Figure 3 Power Dissipation ID- Drain Current (A) Rdson On-Resistance(mΩ) Figure 4 Drain Current ID- Drain Current (A) Vds Drain-Source Voltage (V) Figure 6 Drain-Source On-Resistance Figure 5 Output CHARACTERISTICS ©Silikron Semiconductor CO.,LTD. 3 http://www.silikron.com v2.1 ID- Drain Current (A) Normalized On-Resistance SSF6401 TJ-Junction Temperature(℃) Figure 7 Transfer Characteristics Figure 8 Drain-Source On-Resistance C Capacitance (pF) Rdson On-Resistance(mΩ) Vgs Gate-Source Voltage (V) Vds Drain-Source Voltage (V) Figure 9 Rdson vs Vgs Figure 10 Capacitance vs Vds Is- Reverse Drain Current (A) Vgs Gate-Source Voltage (V) Vgs Gate-Source Voltage (V) Qg Gate Charge (nC) Vsd Source-Drain Voltage (V) Figure 11 Gate Charge ©Silikron Semiconductor CO.,LTD. Figure 12 Source- Drain Diode Forward 4 http://www.silikron.com v2.1 ID- Drain Current (A) SSF6401 Vds Drain-Source Voltage (V) Safe Operation Area r(t),Normalized Effective Transient Thermal Impedance Figure 13 Square Wave Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance ©Silikron Semiconductor CO.,LTD. 5 http://www.silikron.com v2.1 SSF6401 SOT-23 PACKAGE INFORMATION Dimensions in Millimeters (UNIT:mm) Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions in Millimeters MIN. MAX. 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950TYP 1.800 2.000 0.550REF 0.300 0.500 0° 8° NOTES 1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. ©Silikron Semiconductor CO.,LTD. 6 http://www.silikron.com v2.1 SSF6401 ATTENTION: ■ ■ ■ ■ ■ ■ ■ ■ Any and all Silikron products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your Silikron representative nearest you before using any Silikron products described or contained herein in such applications. Silikron assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all Silikron products described or contained herein. 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