SILIKRON BSS138

BSS138
GENERAL FEATURES
● VDS = 50V,ID = 0.22A
RDS(ON) < 6Ω @ VGS=4.5V
RDS(ON) < 3.5Ω @ VGS=10V
ESD Rating:1000V HBM
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Schematic diagram
APPLICATION
●Direct Logic-Level Interface: TTL/CMOS
●Drivers: Relays, Solenoids, Lamps,
Hammers,Display, Memories, Transistors, etc.
●Battery Operated Systems
●Solid-State Relays
Marking and pin Assignment
SOT-23 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
BSS138
BSS138
SOT-23
Tape width
Quantity
8 mm
3000 units
Ø180mm
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
50
V
Gate-Source Voltage
VGS
±20
V
ID
0.22
A
IDM
0.88
A
PD
0.36
W
TJ,TSTG
-55 To 150
℃
RθJA
350
℃/W
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
©Silikron Semiconductor CO.,LTD.
BVDSS
VGS=0V ID=250μA
1
50
http://www.silikron.com
V
v1.0
BSS138
VDS=30V,VGS=0V
100
nA
VDS=50V,VGS=0V
1
μA
IGSS
VGS=±20V,VDS=0V
10
uA
BVGSO
VDS=0V, IG=±250uA
±20
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=1mA
0.8
Drain-Source On-State Resistance
RDS(ON)
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
Gate-Source Breakdown Voltage
V
ON CHARACTERISTICS (Note 3)
Forward Transconductance
gFS
1.5
VGS=10V, ID=0.22A
3.5
VGS=4.5V, ID=0.22A
6
VDS=10V,ID=0.22A
V
Ω
0.1
S
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Clss
30
VDS=25V,VGS=0V,
F=1.0MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
6
Turn-on Delay Time
td(on)
2.6
Turn–On Rise Time
tr
Turn-Off Delay Time
td(off)
PF
15
SWITCHING CHARACTERISTICS (Note 4)
VDD=30V,VGS=10V,
RGEN=6Ω,ID=0.22A
9
Turn–Off Fall Time
tf
6
Total Gate Charge
Qg
1.7
Gate–Source Charge
Qgs
Gate–Drain Charge
Qgd
VDS=25V,ID=0.22A,VGS=10V
nS
20
2.4
nC
0.1
0.4
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=0.44A
1.4
V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
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BSS138
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Vdd
Vgs
Rgen
td(on)
Rl
Vin
D
ton
tr
Vout
90%
VOUT
G
toff
tf
td(off)
90%
INVERTED
10%
10%
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 1:Switching Test Circuit
PD Power(W)
ID- Drain Current (A)
Figure 2:Switching Waveforms
TJ-Junction Temperature(℃)
TJ-Junction Temperature(℃)
Figure 3 Power Dissipation
ID- Drain Current (A)
Rdson On-Resistance(Ω)
Figure 4 Drain Current
ID- Drain Current (A)
Vds Drain-Source Voltage (V)
Figure 5 Output CHARACTERISTICS
©Silikron Semiconductor CO.,LTD.
Figure 6 Drain-Source On-Resistance
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ID- Drain Current (A)
Normalized On-Resistance
BSS138
TJ-Junction Temperature(℃)
Figure 7 Transfer Characteristics
Figure 8 Drain-Source On-Resistance
C Capacitance (pF)
Rdson On-Resistance(Ω)
Vgs Gate-Source Voltage (V)
Vds Drain-Source Voltage (V)
Figure 9 Rdson vs Vgs
Figure 10 Capacitance vs Vds
Is- Reverse Drain Current (A)
Vgs Gate-Source Voltage (V)
Vgs Gate-Source Voltage (V)
Qg Gate Charge (nC)
Vsd Source-Drain Voltage (V)
Figure 11 Gate Charge
©Silikron Semiconductor CO.,LTD.
Figure 12 Source- Drain Diode Forward
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ID- Drain Current (A)
BSS138
Vds Drain-Source Voltage (V)
Safe Operation Area
r(t),Normalized Effective
Transient Thermal Impedance
Figure 13
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
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BSS138
SOT-23 PACKAGE INFORMATION
Dimensions in Millimeters (UNIT:mm)
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
Dimensions in Millimeters
MIN.
MAX.
0.900
1.150
0.000
0.100
0.900
1.050
0.300
0.500
0.080
0.150
2.800
3.000
1.200
1.400
2.250
2.550
0.950TYP
1.800
2.000
0.550REF
0.300
0.500
0°
8°
NOTES
1. All dimensions are in millimeters.
2. Tolerance ±0.10mm (4 mil) unless otherwise specified
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
©Silikron Semiconductor CO.,LTD.
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v1.0
BSS138
SOT 23 Tape and Reel Information
Dimensions in Millimeters (UNIT:mm)
NOTES:
1.
2.
3.
All dimensions are in millimeters.
10 Sprocket hole pitch cumulative tolerance ±0.20MAX
General tolerance ±0.25
©Silikron Semiconductor CO.,LTD.
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BSS138
ATTENTION:
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Any and all Silikron products described or contained herein do not have specifications that can handle applications that require
extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can
be reasonably expected to result in serious physical and/or material damage. Consult with your Silikron
representative nearest you before using any Silikron products described or contained herein in such applications.
Silikron assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in
products specifications of any and all Silikron products described or contained herein.
Specifications of any and all Silikron products described or contained herein stipulate the performance, characteristics, and
functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and
functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that
cannot be evaluated in an independent device, the customer should always evaluate and test devices
mounted in the customer’s products or equipment.
Silikron Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor
products fail with some probability. It is possible that these probabilistic failures could give rise to
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Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the Silikron product
that you intend to use.
This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change without notice.
©Silikron Semiconductor CO.,LTD.
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