低ノイズタイプ シングルインライン型 Bridge Diode Low Noise type Single In-line Package ■外観図 OUTLINE D6SB60L Unit : mm Weight : 6.3g （typ.） Package：5S 600V 6A 特長 • 薄型 SIP パッケージ • UL E142422 • 低ノイズ • 高 IFSM D6SB 60L 0264 Feature • • • • Thin-SIP UL E142422 Low Noise Large IFSM 外形図については新電元 Web サイト又は〈半導体製品一覧表〉をご参照下 さい。捺印表示については捺印仕様をご確認下さい。 For details of outline dimensions, refer to our web site or the Semiconductor Short Form Catalog. As for the marking, refer to the specification “Marking, Terminal Connection”. ■定格表 RATINGS Absolute Maximum Ratings Type No. Symbol Conditions Item Storage Temperature Operation Junction Temperature Maximum Reverse Voltage 50Hz sine wave, Resistance load Average Rectified Forward Current With heatsink Without heatsink 50Hz sine wave, Non-repetitive 1cycle peak value, Tj = 25 Peak Surge Forward Current Current Squared Time Dielectric Strength Terminals to Case, AC 1 minute Recommended torque : 0.5 N m Mounting Torque Electrical Characteristics Forward Voltage Pulse measurement, per diode Reverse Current Pulse measurement, per diode Reverse Recovery Time Junction to Case, With heatsink Thermal Resistance l Junction to Lead, Without heatsink Junction to Ambient, Without heatsink 88 （J534-1） D6SB60L Unit Thin SIP UL Bridge D6SB60L ■特性図 CHARACTERISTIC DIAGRAMS ＊ Sine wave は 50Hz で測定しています。 ＊ 50Hz sine wave is used for measurements. ＊半導体製品の特性は一般的にバラツキを持っております。 Typical は統計的な実力を表しています。 ＊ Semiconductor products generally have characterristic variation. Typical is a statistical average of the device’s ability. （J534-1） 89