Transient Voltage Suppressors Array for ESD Protection Low Capacitance ESD05V36T-4L Description SOT-363 The ESD05V36T-4L is designed to protect voltage sensitive components from ESD and transient voltage events. Excellent clamping capability, low leakage, and fast response time, make these parts ideal for ESD protection on designs where board space is at a premium. Feature Functional Diagram u 150 Watts Peak Pulse Power per Line (tp=8/20μs) u Protects four I/O lines u Low clamping voltage u Working voltages : 5V u Low leakage current u IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact) u IEC61000-4-4 (EFT) 40A (5/50ηs) u IEC61000-4-5 (Lightning) 12A (8/20μs) Applications u USB OTG u Video Graphics Cards u Monitors and Flat Panel Displays u High-Definition Multimedia Interface (HDMI) Mechanical Characteristics u 10/100/1000 Ethernet u IEEE 1394 Fire wire Ports u SIM Ports u ATM Interfaces u JEDEC SOT-363 Package u Molding Compound Flammability Rating : UL 94V-0 u Weight 8.0 Milligrams (Approximate) u Quantity Per Reel : 3,000pcs u Reel Size : 7 inch u Lead Finish : Lead Free Mechanical Characteristics Symbol Parameter Value Units 150 W PPP Peak Pulse Power (tp=8/20μs waveform) TL Lead Soldering Temperature 260 (10sec) ºC TSTG Storage Temperature Range -55 to +150 ºC Operating Temperature Range -55 to +150 ºC TJ Air Discharge ±15 Contact Discharge ±8 IEC61000-4-2 (ESD) IEC61000-4-4 (EFT) 40 A IEC61000-4-5 ( Lightning ) 12 A UN Semiconductor Co., Ltd. Revision January 06, 2014 KV www.unsemi.com.tw 1/3 @ UN Semiconductor Co., Ltd. 2014 Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information. Transient Voltage Suppressors Array for ESD Protection Low Capacitance ESD05V36T-4L Electrical Characteristics (@ 25℃ Unless Otherwise Specified ) Part Number Device Marking VRWM (V) (Max.) VB (V) (Min.) IT (mA) VC @1A (Max.) (Max.) B54 5.0 6.0 1 15.0 25.0 ESD05V36T-4L (@A) IR (μA) (Max.) C (pF) (Typ.) 6 1 2 VC Characteristic Curves Fig1. 8/20μs Pulse Waveform Fig2. ESD Pulse Waveform (according to IEC 61000-4-2) 120 IPP - Peak Pulse Current - % of IPP 100 100% TEST WAVEFORM PARAMETERS tr=8μs td=20μs Peak Value IPP 80 Percent of Peak Pulse Current % tr 60 40 td=t IPP/2 20 0 0 5 10 15 20 25 10% tr = 0.7~1ns Time (ns) 30ns 30 60ns t - Time (μs) Fig3. 90% Power Derating Curve % of Rated Power 110 100 90 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 Ambient Temperature – TA (ºC) UN Semiconductor Co., Ltd. Revision January 06, 2014 www.unsemi.com.tw 2/3 @ UN Semiconductor Co., Ltd. 2014 Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information. Transient Voltage Suppressors Array for ESD Protection Low Capacitance ESD05V36T-4L Characteristic Curves Fig4. Fig5. Normalized Capacitance Vs. Reverse Voltage Clamping Voltage Vs. Peak Pulse Current 2.0 Clamping Voltage (V) Junction Capacitance (pF) 25 1.5 1.0 0.5 0 0 1 2 3 4 VBR, Reverse Voltage (V) 20 10 5 3 0 5 0 2 4 6 8 Peak Pulse Current (A) 10 SOT-363 Package Outline & Dimensions Inches Symbol Min. A 0.031 0.037 0.043 0.80 0.95 1.10 A1 0.000 0.002 0.004 0.00 0.05 0.10 A3 UN Semiconductor Co., Ltd. Revision January 06, 2014 0.08 REF 0.2 REF b 0.004 0.008 0.012 0.10 0.21 0.30 C 0.004 0.005 0.010 0.10 0.14 0.25 D 0.070 0.078 0.086 1.80 2.00 2.20 E 0.045 0.049 0.053 1.15 1.25 1.35 e Soldering Footprint Millimeters Nom. Max. Min. Nom. Max. 0.026 BSC 0.65 BSC L 0.004 0.008 0.012 0.10 0.20 0.30 HE 0.078 0.082 0.086 2.00 2.10 2.20 Symbol Inches Millimeters C 0.0748 1.9 G 0.055 1.40 P 0.025 0.65 X 0.0157 0.40 Y 0.019 0.50 Z 0.0945 2.4 www.unsemi.com.tw 3/3 @ UN Semiconductor Co., Ltd. 2014 Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information.