Transient Voltage Suppressors for ESD Protection ESDXXV52D-C Series Description SOD-523 The ESDXXV52D-C is designed to protect voltage sensitive components from ESD and transient voltage events. Excellent clamping capability, low leakage, and fast response time, make these parts ideal for ESD protection on designs where board space is at a premium. Feature Functional Diagram u 100 Watts Peak Pulse Power per Line (tp=8/20μs) u Protects one I/O line u Low clamping voltage u Working voltages : 3.3V, 5V, 8V u Low leakage current u IEC61000-4-2 (ESD) ±30kV (air), ±30kV (contact) u IEC61000-4-4 (EFT) 40A (5/50ηs) Applications u Cell Phone Handsets and Accessories u Microprocessor based equipment u Personal Digital Assistants (PDA's) u Notebooks, Desktops, and Servers u Portable Instrumentation u Peripherals u Pagers Mechanical Characteristics u SOD-523 Package u Molding Compound Flammability Rating : UL 94V-0 u Weight 2 Milligrams (Approximate) u Quantity Per Reel : 3,000pcs u Reel Size : 7 inch u Lead Finish : Lead Free Mechanical Characteristics Symbol Parameter Value Units 100 W PPP Peak Pulse Power (tp=8/20μs waveform) TL Lead Soldering Temperature 260 (10sec) ºC TSTG Storage Temperature Range -55 to +150 ºC Operating Temperature Range -55 to +150 ºC TJ IEC61000-4-2 (ESD) Air Discharge ±30 Contact Discharge ±30 KV IEC61000-4-4 (EFT) 40 UN Semiconductor Co., Ltd. Revision January 06, 2014 A www.unsemi.com.tw 1/3 @ UN Semiconductor Co., Ltd. 2014 Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information. Transient Voltage Suppressors for ESD Protection ESDXXV52D-C Series I-V Curve Characteristics Symbol Bi-directional Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage VRWM IR I IPP @ IPP Working Peak Reverse Voltage Maximum Reverse leakage Current VC @ VRWM IT VBR VRW R IT IT Test Current VB Breakdown Voltage V IR IR VRW VBR VC R @ IT IPP Electrical Characteristics (@ 25℃ Unless Otherwise Specified ) Device Marking VRWM (V) (Max.) VB (V) (Min.) IT (mA) VC @1A (Max.) (Max.) ESD3.3V52D-C CT 3.3 4 1 7 ESD05V52D-C DT 5 6 1 ESD08V52D-C GT 8 8.5 1 Part Number (@A) IR (μA) (Max.) C (pF) (Typ.) 12 8 1 10 9.8 20 5 1 10 17.5 25 3 1 7 VC Characteristic Curves Fig1. 8/20μs Pulse Waveform Fig2. ESD Pulse Waveform (according to IEC 61000-4-2) tr 100 Peak Value IPP 80 100% TEST WAVEFORM PARAMETERS tr=8μs td=20μs Percent of Peak Pulse Current % IPP - Peak Pulse Current - % of IPP 120 60 40 td=t IPP/2 20 0 0 5 10 15 20 25 10% tr = 0.7~1ns Time (ns) 30ns 30 60ns t - Time (μs) UN Semiconductor Co., Ltd. Revision January 06, 2014 90% www.unsemi.com.tw 2/3 @ UN Semiconductor Co., Ltd. 2014 Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information. Transient Voltage Suppressors for ESD Protection ESDXXV52D-C Series Characteristic Curves Fig3. ESD Clamping (+8KV Contac per IEC61000-4-2) Fig4. ESD Clamping (-8KV Contac per IEC61000-4-2) SOD-523 Package Outline & Dimensions Millimeters Inches Symbol Soldering Footprint Min. Nom. Max. Min. Nom. Max. A 1.10 1.20 1.30 0.043 0.047 0.051 B 0.70 0.80 0.90 0.028 0.032 0.035 C 0.50 0.60 0.70 0.020 0.024 0.028 D 0.25 0.30 0.35 0.010 0.012 0.014 J 0.07 0.14 0.20 0.0028 0.0055 0.0079 K 0.15 0.20 0.25 0.006 0.008 0.010 S 1.50 1.60 1.70 0.059 0.063 0.067 Symbol Millimeters Inches E 1.40 0.0547 F 0.40 0.0157 G 0.40 0.0157 UN Semiconductor Co., Ltd. Revision January 06, 2014 www.unsemi.com.tw 3/3 @ UN Semiconductor Co., Ltd. 2014 Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information.