BL817S 0.05A , 80V , 150mW High Density Mounting Type Photocoupler Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DIP4L DIP4L DESCRIPTION The BL817S Series of devices each consist of an infrared Emitting diodes, optically coupled to a phototransistor detector. They are packaged in a 4-pin DIP package and available in Wide-lead spacing and SMD option. A B FEATURES Current transfer ratio (CTR：50%~600% @ IF=5mA, VCE=5V) High isolation voltage between input and output (Viso = 5000V rms) Creepage distance > 7.62mm Pb free and ROHS compliant G C F D H J L K APPLICATIONS REF. Programmable controllers System appliances, measuring instruments Telecommunication equipments Home appliances, such as fan heaters, etc. Signal transmission between circuits of different potentials and impedances A B C D F M Millimeter Min. Max. REF. 6.40 6.60 4.50 4.70 7.39 7.59 3.28 3.68 1.25 TYP. G H J K M Millimeter Min.. Max 0.25 TYP 0.3 TYP 1.1 1.3 9.8 10.3 2.49 2.69 Top View RANK TABLE OF CURRENT TRANSFER RATIO CTR Product-Rank BL817S-L BL817S-A BL817S-B BL817S-C BL817S-D BL817S Range(%) 50~100 80~160 130~260 200~400 300~600 50~600 Note： 1. Conditions：IF=5mA, VCE=5V, TA=25°C http://www.SeCoSGmbH.com/ 09-Jul-2014 Rev. C Any changes of specification will not be informed individually. Page 1 of 4 BL817S 0.05A , 80V , 150mW High Density Mounting Type Photocoupler Elektronische Bauelemente ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Forward Current IF 50 mA Reverse Voltage VR 6 V Power Dissipation P 70 mW Collector-Emitter Voltage VCEO 80 Emitter-Collector Voltage VECO 6 Collector Current IC 50 mA Collector Power Dissipation PC 150 mW Total Power Dissipation Ptot 200 mW Isolation Voltage Viso 5000 V rms Rated impulse isolation voltage VIOTM 6000 V Rated repetitive peak isolation voltage VIORM 630 V Operating Temperature Topr -40~125 Storage Temperature Tstg -55~125 Soldering Temperature Tsol 260 Input Output V °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Input Output Symbol Min. Typ. Max. Unit Forward Voltage VF - 1.2 1.4 V IF=20mA Reverse Current IR - - 10 µA VR=4V Terminal Capacitance Ct - 30 250 pF V=0, f=1KHz Collector Dark Current ICEO - - 100 nA VCE=20V, IF=0 BVCEO 80 - - V IC=0.1mA, IF=0 BVECO 6 - - V IE=10µA, IF=0 IC 2.5 - 30 mA CTR 50 - 600 % VCE(sat) - 0.1 0.2 V IF=20mA, IC=1mA - Ω DC500V, 40~60%R.H. V=0, f=1MHz Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector Current Current Transfer Ratio Collector-Emitter Saturation Voltage Isolation Resistance TRANSFER CHARACTERISTICS Floating Capacitance http://www.SeCoSGmbH.com/ 09-Jul-2014 Rev. C RISO 5x10 10 1x10 11 CF - 0.6 1 pF Cut-Off Frequency fC - 80 - KHz Response Time(Rise) tr - 4 18 µs Response Time(Fall) tf - 3 18 µs Test Conditions VCE=5V, IF=5mA VCE=5V, IC=2mA, RL=100Ω, -3dB VCE=2V, IC=2mA RL=100Ω Any changes of specification will not be informed individually. Page 2 of 4 BL817S Elektronische Bauelemente 0.05A , 80V , 150mW High Density Mounting Type Photocoupler CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 09-Jul-2014 Rev. C Any changes of specification will not be informed individually. Page 3 of 4 BL817S Elektronische Bauelemente 0.05A , 80V , 150mW High Density Mounting Type Photocoupler CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 09-Jul-2014 Rev. C Any changes of specification will not be informed individually. Page 4 of 4