SECOS 2SC2551

2SC2551
0.1 A , 300 V
NPN Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES

High Voltage

Low Saturation Voltage

Small Collector Output Capacitance

Complementary to 2SA1091
TO-92
G
H
J
A
Emitter
Collector
Base
D
B
CLASSIFICATION OF hFE(1)
K
Product-Rank
2SC2551-R
2SC2551-O
Range
30~90
50~150
Millimeter
Min.
Max.
4.40
4.70
4.30
4.70
12.70
3.30
3.81
0.36
0.56
0.36
0.51
1.27 TYP.
1.10
2.42
2.66
0.36
0.76
REF.
E
C
A
B
C
D
E
F
G
H
J
K
F
Collector


Base

Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Unit
Collector to Base Voltage
VCBO
300
V
Collector to Emitter Voltage
VCEO
300
V
Emitter to Base Voltage
VEBO
6
V
Collector Current - Continuous
IC
0.1
A
Collector Power Dissipation
PC
400
mW
TJ, TSTG
150, -55~150
°C
Junction, Storage Temperature
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Collector to Base Breakdown Voltage
V(BR)CBO
300
-
-
V
IC=100μA, IE=0
Collector to Emitter Breakdown Voltage
V(BR)CEO
300
-
-
V
IC=1mA, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO
6
-
-
V
IE=100μA, IC=0
ICBO
-
-
0.1
μA
VCB=300V, IE=0
μA
Collector Cut – Off Current
Emitter Cut – Off Current
DC Current Gain
IEBO
-
-
0.1
hFE(1)
30
-
150
*
VEB=6V, IC=0
VCE=10V, IC=20mA
20
-
-
Collector to Emitter Saturation Voltage
VCE(sat)
-
-
0.5
V
IC=20mA, IB=2mA
Base to Emitter voltage
VBE(sat)
-
-
1.2
V
IC=20mA, IB=2mA
fT
-
80
-
MHz
VCE=10V, IC=20mA
Cob
-
-
4
pF
Transition Frequency
Collector Output Capacitance
http://www.SeCoSGmbH.com/
21-Feb-2011 Rev. A
hFE(2)
Test Conditions
VCE=10V, IC=1mA
VCB=20V, IE=0, f=1MHz
Any changes of specification will not be informed individually.
Page 1 of 3
2SC2551
Elektronische Bauelemente
0.1 A , 300 V
NPN Plastic Encapsulated Transistor
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
21-Feb-2011 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 3
2SC2551
Elektronische Bauelemente
0.1 A , 300 V
NPN Plastic Encapsulated Transistor
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
21-Feb-2011 Rev. A
Any changes of specification will not be informed individually.
Page 3 of 3