TCDT1110(G) Vishay Telefunken Optocoupler with Phototransistor Output Description The TCDT1110(G) consists of a phototransistor optically coupled to a gallium arsenide infraredemitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements. Applications Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): 14827 D For appl. class I – IV at mains voltage ≤ 300 V D For appl. class I – III at mains voltage ≤ 600 V according to VDE 0884, table 2, suitable for: Switch-mode power supplies, line receiver, computer peripheral interface, microprocessor system interface. nc C E 6 5 4 1 2 3 A (+) C (–) VDE Standards D VDE 0884 Optocoupler for electrical safety requirements 94 9222 These couplers perform safety functions according to the following equipment standards: nc D IEC 950/EN 60950 Office machines (applied for reinforced isolation for mains voltage ≤ 400 VRMS) D VDE 0804 Telecommunication processing apparatus and data D IEC 65 Safety for mains-operated electronic and related household apparatus Order Instruction Ordering Code CTR Ranking TCDT1110/ TCDT1110G1) > 100% 1) G = Leadform 10.16 mm; G is not market on the body 216 Remarks Rev. A3, 11–Jan–99 TCDT1110(G) Vishay Telefunken Features D Rated recurring peak voltage (repetitive) Approvals: D BSI: BS EN 41003, BS EN 60095 (BS 415), BS EN 60950 (BS 7002), Certificate number 7081 and 7402 VIORM = 600 VRMS D Creepage current resistance according to VDE 0303/IEC 112 Comparative Tracking Index: CTI = 275 D Thickness through insulation ≥ 0.75 mm D FIMKO (SETI): EN 60950, Certificate number 12399 D Underwriters Laboratory (UL) 1577 recognized, file number E-76222 D VDE 0884, Certificate number 94778 VDE 0884 related features: D Rated impulse voltage (transient overvoltage) VIOTM = 6 kV peak D Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV D Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 V peak) General features: D Isolation materials according to UL94-VO D Pollution degree 2 (DIN/VDE 0110 resp. IEC 664) D Climatic classification 55/100/21 (IEC 68 part 1) D Special construction: Therefore, extra low coupling capacity of typical 0.3 pF, high Common Mode Rejection D Low temperature coefficient of CTR D Base not connected D Coupling System A Absolute Maximum Ratings Input (Emitter) Parameter Reverse voltage Forward current Forward surge current Power dissipation Junction temperature Test Conditions tp/T ≤ 10 ms Tamb ≤ 25°C Symbol VR IF IFSM PV Tj Value 6 60 3 100 125 Unit V mA A mW °C Symbol VCEO VECO IC ICM PV Tj Value 70 7 50 100 150 125 Unit V V mA mA mW °C Symbol VIO Ptot Tamb Tstg Tsd Value 3.75 250 –55 to +100 –55 to +125 260 Unit kV mw °C °C °C Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature Test Conditions tp/T = 0.5, tp ≤ 10 ms Tamb ≤ 25°C Coupler Parameter Isolation test voltage (RMS) Total power dissipation Ambient temperature range Storage temperature range Soldering temperature Rev. A3, 11–Jan–99 Test Conditions t = 1 min Tamb ≤ 25°C 2 mm from case, t ≤ 10 s 217 TCDT1110(G) Vishay Telefunken Electrical Characteristics (Tamb = 25°C) Input (Emitter) Parameter Forward voltage Junction capacitance Test Conditions IF = 50 mA VR = 0, f = 1 MHz Symbol VF Cj Min. Typ. 1.2 50 Max. 1.5 Unit V pF Test Conditions IC = 1 mA IE = 100 mA VCE = 30 V, IF = 0 Symbol VCEO VECO ICEO Min. 70 7 Typ. Max. 150 Unit V V nA Test Conditions IF = 10 mA, IC = 0.5 mA Symbol VCEsat Min. Max. 0.3 Unit V VCE = 5 V, IF = 10 mA, RL = 1 W f = 1 MHz fc 110 kHz Ck 0.3 pF Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector cut-off current Coupler Parameter Collector emitter saturation voltage Cut-off frequency Coupling capacitance Typ. Current Transfer Ratio (CTR) Parameter IC/IF 218 Test Conditions VCE = 20 V, IF = 10 mA Type TCDT1110(G) Symbol CTR Min. 1 Typ. Max. Unit Rev. A3, 11–Jan–99 TCDT1110(G) Vishay Telefunken Maximum Safety Ratings (according to VDE 0884) see figure 1 This device is used for protective separation against electrical shock only within the maximum safety ratings. This must be ensured by using protective circuits in the applications. Input (Emitter) Parameters Forward current Test Conditions Symbol Isi Value 130 Unit mA Test Conditions Tamb ≤ 25°C Symbol Psi Value 265 Unit mW Test Conditions Symbol VIOTM Tsi Value 6 150 Unit kV °C Output (Detector) Parameters Power dissipation Coupler Parameters Rated impulse voltage Safety temperature Insulation Rated Parameters (according to VDE 0884) Parameter Test Conditions Partial discharge test voltage – 100%, ttest = 1 s Routine test Partial discharge g test voltage g – tTr = 60 s, ttest = 10 s, Lot test (sample test) (see figure 2) Insulation resistance VIO = 500 V VIO = 500 V, Tamb = 100°C VIO = 500 V, Tamb = 200°C Symbol Vpd Min. 1.6 VIOTM Vpd RIO RIO 6 1.3 1012 1011 RIO 109 Typ. Max. Unit kV kV kV W W W (construction test only) VIOTM 300 V Psi 250 t1, t2 = 1 to 10 s t3, t4 = 1 s ttest = 10 s tstres = 12 s (mW) 200 VPd 150 VIOWM VIORM 100 Isi (mA) 50 0 0 0 25 50 75 100 125 150 175 200 Tamb ( °C ) 95 10934 Figure 1. Derating diagram Rev. A3, 11–Jan–99 t3 ttest t4 t1 13930 tTr = 60 s t2 tstres t Figure 2. Test pulse diagram for sample test according to DIN VDE 0884 219 TCDT1110(G) Vishay Telefunken Switching Characteristics Parameter Turn-off time Turn-on time Turn-off time Turn-on time IF 0 Test Conditions VS = 10 V, IC = 2 mA, RL = 100 W ((see figure g 3)) Symbol toff ton toff ton VS = 10 V, IF = 10 mA, RL = 1 kW ((see figure g 4)) Typ. 15.0 15.0 18.0 9.0 + 10 V IF 96 11698 IC = 2 mA ; Adjusted through input amplitude RG = 50 W tp = 0.01 T tp = 50 ms IF 0 t tp Channel I 50 W 100 W Channel II Unit ms ms ms ms IC Oscilloscope RL CL w1M W v 20 pF 100% 90% 95 10889 Figure 3. Test circuit, non-saturated operation 10% 0 t tr td IF 0 IF = 10 mA ts ton + 10 V tp tion td tr ton (= td + tr) IC RG = 50 W tp = 0.01 T tp = 50 ms tf toff pulse duradelay time rise time turn-on time ts tf toff (= ts + tf) storage time fall time turn-off time Figure 5. Switching times Channel I 50 W 95 10898 1 kW Channel II Oscilloscope RL CL w 1 MW v 20 pF Figure 4. Test circuit, saturated operation 220 Rev. A3, 11–Jan–99 TCDT1110(G) Vishay Telefunken Typical Characteristics (Tamb = 25_C, unless otherwise specified) 10000 Coupled device ICEO– Collector Dark Current, with open Base ( nA ) P tot – Total Power Dissipation ( mW ) 300 250 200 Phototransistor 150 IR-diode 100 50 VCE=30V IF=0 1000 100 10 0 1 0 40 80 120 Tamb – Ambient Temperature ( °C ) 96 11700 0 50 100 75 Tamb – Ambient Temperature ( °C ) 95 11072 Figure 6. Total Power Dissipation vs. Ambient Temperature 1000.0 25 Figure 9. Collector Dark Current vs. Ambient Temperature 100.00 IC – Collector Current ( mA ) I F – Forward Current ( mA ) VCE=10V 100.0 10.0 1.0 0.1 0 96 11862 1.3 1.0 10.0 100.0 IF – Forward Current ( mA ) 96 11904 Figure 10. Collector Current vs. Forward Current 100 1.5 1.4 0.10 VCE=10V IF=10mA 1.2 1.1 1.0 0.9 0.8 0.7 20mA IC – Collector Current ( mA ) CTR rel – Relative Current Transfer Ratio Figure 7. Forward Current vs. Forward Voltage 1.00 0.01 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF – Forward Voltage ( V ) 10.00 IF=50mA 10mA 10 5mA 2mA 1 1mA 0.6 0.5 –30 –20 –10 0 10 20 30 40 50 60 70 80 96 11874 Tamb – Ambient Temperature ( °C ) Figure 8. Relative Current Transfer Ratio vs. Ambient Temperature Rev. A3, 11–Jan–99 0.1 0.1 95 10985 1 10 100 VCE – Collector Emitter Voltage ( V ) Figure 11. Collector Current vs. Collector Emitter Voltage 221 TCDT1110(G) 1.0 t on / t off – Turn on / Turn off Time ( m s ) VCEsat – Collector Emitter Saturation Voltage ( V ) Vishay Telefunken 0.8 20% 0.6 CTR=50% 0.4 0.2 10% 0 1 30 toff 20 10 100 10 IC – Collector Current ( mA ) ton 0 5 VCE=20V 100 10 20 15 Figure 15. Turn on / off Time vs. Forward Current t on / t off – Turn on / Turn off Time ( m s ) 1000 10 IF – Forward Current ( mA ) 95 10974 Figure 12. Collector Emitter Saturation Voltage vs. Collector Current CTR – Current Transfer Ratio ( % ) Saturated Operation VS=5V RL=1kW 40 0 95 10972 1 20 Non Saturated Operation VS=10V RL=100W 15 toff 10 ton 5 0 0.1 95 10976 50 1 100 10 IF – Forward Current ( mA ) 0 95 10975 Figure 13. Current Transfer Ratio vs. Forward Current 2 4 6 8 10 IC – Collector Current ( mA ) Figure 16. Turn on / off Time vs. Collector Current Type Date Code (YM) XXXXXX 918 A TK 63 0884 V D E Production Location Safety Logo 15090 Coupling System Indicator Company Logo Figure 14. Marking example 222 Rev. A3, 11–Jan–99 TCDT1110(G) Vishay Telefunken Dimensions of TCDT1110G in mm y y weight: ca. 0.50 g creepage distance: 8 mm air path: 8 mm after mounting on PC board 14771 Dimensions of TCDT1110 in mm y y weight: 0.50 g creepage distance: 6 mm air path: 6 mm after mounting on PC board 14770 Rev. A3, 11–Jan–99 223