2SB709A -0.2A , -45V PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES SOT-23 For general amplification Complementary of the 2SD601A A L 3 3 C B Top View CLASSIFICATION OF hFE 1 Product-Rank 2SB709A-Q 2SB709A-R 2SB709A-S Range 160~260 210~340 290~460 Marking BQ1 BR1 BS1 1 2 K E D F MPQ LeaderSize SOT-23 3K 7’ inch H G Millimeter Min. Max. 2.80 3.04 2.10 2.55 1.20 1.40 0.89 1.15 1.78 2.04 0.30 0.50 REF. PACKAGE INFORMATION Package 2 A B C D E F REF. G H J K L J Millimeter Min. Max. 0.09 0.18 0.45 0.60 0.08 0.177 0.6 REF. 0.89 1.02 Collector 3 1 Base 2 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Symbol Ratings Unit Collector to Base Voltage Parameter VCBO -45 V Collector to Emitter Voltage VCEO -45 V Emitter to Base Voltage VEBO -7 V Collector Currrent IC -100 mA Collector Power Dissipation PC 200 mW TJ, TSTG 150, -55 ~ 150 ℃ Junction & Storage Temperature ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Collector-base breakdown voltage V(BR)CBO -45 - - V IC= -10μA, IE=0 Collector-emitter breakdown voltage V(BR)CEO -45 - - V IC= -2mA, IB=0 Emitter-base breakdown voltage V(BR)EBO -7 - - V IE= -10μA, IC=0 ICBO - - -0.1 μA VCB= -20V, IE=0 Collector cut-off current Test Conditions ICEO - - -100 μA VCE= -10V, IB=0 VCE(sat) - - -0.5 V IC= -100mA, IB= -10mA DC current gain hFE 160 - 460 Transition frequency fT 60 - - MHz Cob - - 2.7 pF Emitter cut-off current Collector-emitter saturation voltage Collector output capacitance http://www.SeCoSGmbH.com/ 21-Jan-2011 Rev. B VCE= -10V, IC= -2mA VCE= -10V, IC= -1mA, f=200MHz VCB= -10V, IE=0, f=1MHz Any changes of specification will not be informed individually. Page 1 of 3 2SB709A Elektronische Bauelemente -0.2A , -45V PNP Silicon General Purpose Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 21-Jan-2011 Rev. B Any changes of specification will not be informed individually. Page 2 of 3 2SB709A Elektronische Bauelemente -0.2A , -45V PNP Silicon General Purpose Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 21-Jan-2011 Rev. B Any changes of specification will not be informed individually. Page 3 of 3