2SA1036 -0.5A, -40V PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES SOT-23 IC Max.= -500 mA Low VCE(sat). Ideal for low-voltage operation. A L 3 3 C B Top View CLASSIFICATION OF hFE 1 Product-Rank 2SA1036-P 2SA1036-Q 2SA1036-R Range 82~180 120~270 180~390 Marking HP HQ HR 1 2 K E D F MPQ LeaderSize SOT-23 3K 7’ inch H G Millimeter Min. Max. 2.80 3.04 2.10 2.55 1.20 1.40 0.89 1.15 1.78 2.04 0.30 0.50 REF. PACKAGE INFORMATION Package 2 A B C D E F REF. G H J K L J Millimeter Min. Max. 0.09 0.18 0.45 0.60 0.08 0.177 0.6 REF. 0.89 1.02 Collector 3 1 Base 2 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Symbol Ratings Unit Collector to Base Voltage Parameter VCBO -40 V Collector to Emitter Voltage VCEO -32 V Emitter to Base Voltage VEBO -5 V Collector Currrent IC -500 mA Total Power Dissipation PD 150 mW TJ, TSTG 150, -55 ~ 150 ℃ Junction & Storage Temperature ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Collector-base breakdown voltage V(BR)CBO -40 - - V IC=-100μA, IE=0 Collector-emitter breakdown voltage V(BR)CEO -32 - - V IC=-1mA, IB=0 Emitter-base breakdown voltage V(BR)EBO -5 - - V IE=-100μA, IC=0 ICBO - - -1 μA VCB=-20V, IE=0 Collector cut-off current Test Conditions IEBO - - -1 μA VEB= -4V, IC=0 VCE(sat) - - -0.4 V IC=-100mA, IB=-10mA DC current gain hFE 82 - 390 Transition frequency fT - 200 - MHz COB - 7 - pF Emitter cut-off current Collector-emitter saturation voltage Collector output capacitance http://www.SeCoSGmbH.com/ 31-Dec-2010 Rev. B VCE=-3V, IC=-10mA VCE=-5V, IC=-20mA, f=100MHz VCB=-10V, IE=0, f=1MHz Any changes of specification will not be informed individually. Page 1 of 2 2SA1036 Elektronische Bauelemente -0.5A, -40V PNP Silicon General Purpose Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 31-Dec-2010 Rev. B Any changes of specification will not be informed individually. Page 2 of 2