2SC4617 0.15A , 60V NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES SOT-523 Low Cob. Cob=2.0pF Complement of 2SA1774 A M 3 3 C B Top View CLASSIFICATION OF hFE 1 1 Product-Rank 2SC4617-Q 2SC4617-R 2SC4617-S Range 120~270 180~390 270~560 Marking BQ BR BS K D F LeaderSize SOT-523 3K 7’ inch H G A B C D E F PACKAGE INFORMATION MPQ 2 E REF. Package 2 L Millimeter Min. Max. 1.5 1.7 1.45 1.75 0.75 0.85 0.7 0.9 0.9 1.1 0.15 0.25 J Millimeter Min. Max. 0.1 0.55 REF. 0.1 0.2 0.5 TYP. 0.25 0.325 REF. G H J K L M Collector 3 1 Base 2 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Symbol Ratings Unit Collector to Base Voltage Parameter VCBO 60 V Collector to Emitter Voltage VCEO 50 V Emitter to Base Voltage VEBO 7 V Collector Currrent IC 150 mA Collector Power Dissipation PC 150 mW TJ, TSTG 150, -55 ~ 150 ℃ Junction & Storage Temperature ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Parameter V(BR)CBO 60 - - V IC=50μA, IE=0 Collector-emitter breakdown voltage V(BR)CEO 50 - - V IC=1mA, IB=0 Emitter-base breakdown voltage V(BR)EBO 7 - - V IE=50μA, IC=0 Collector cut-off current ICBO - - 0.1 μA VCB=60V, IE=0 Emitter cut-off current IEBO - - 0.1 μA VEB= 7V, IC=0 VCE(sat) - - 0.4 V IC=50mA, IB=5mA hFE 120 - 560 fT - 180 - MHz Cob - - 3.5 pF Collector-emitter saturation voltage * DC current gain Transition frequency Collector output capacitance Test Conditions VCE=6V, IC=1mA VCE=12V, IE=2mA, f=100MHz VCB=12V, IE=0, f=1MHz * Pulse Test :Pulse Width ≤300us,D.C ≤ 2% http://www.SeCoSGmbH.com/ 24-Feb-2011 Rev. D Any changes of specification will not be informed individually. Page 1 of 2 2SC4617 Elektronische Bauelemente 0.15A , 60V NPN Silicon General Purpose Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 24-Feb-2011 Rev. D Any changes of specification will not be informed individually. Page 2 of 2