2SC4115

2SC4115
3A , 40V
NPN Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of ā€œ-Cā€ specifies halogen & lead-free
SOT-89
FEATURES
Small Flat Package
General Purpose Application
Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A)
4
1
A
CLASSIFICATION OF hFE(1)
E
Product-Rank
2SC4115-Q
2SC4115-R
2SC4115-S
Range
120~270
180~390
270~560
Marking
4115Q
4115R
4115S
C
B
D
F
G
H
K
J
MPQ
SOT-89
L
Collector
PACKAGE INFORMATION
Package
2
B C 3
E
2
Leader Size
1K
REF.
1
7 inch
A
B
C
D
E
F
Base
3
Emitter
Millimeter
Min.
Max.
4.40
4.60
3.94
4.25
1.40
1.60
2.25
2.60
1.50
1.85
0.89
1.20
Millimeter
Min.
Max.
0.40
0.58
1.50 TYP
3.00 TYP
0.32
0.52
0.35
0.44
REF.
G
H
J
K
L
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Unit
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCEO
20
V
Emitter-Base Voltage
VEBO
6
V
Collector Current-Continuous
IC
3
A
Collector Power Dissipation
PC
500
mW
TJ, TSTG
150, -55~150
°C
Junction & Storage Temperature
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Collector-Base Breakdown Voltage
V(BR)CBO
40
-
-
V
IC=50µA, IE=0
Collector-Emitter Breakdown Voltage
V(BR)CEO
20
-
-
V
IC=1mA, IB=0
Emitter-Base Breakdown Voltage
V(BR)EBO
6
-
-
V
IE=50µA, IC=0
Collector Cut-Off Current
ICBO
-
0.1
µA
VCB=30V, IE=0
Emitter Cut-Off Current
IEBO
-
-
0.1
µA
VEB=5V, IC=0
DC Current Gain
hFE
120
-
560
VCE(sat)
-
-
0.5
fT
200
290
-
Collector-Emitter Saturation voltage
Transition Frequency
http://www.SeCoSGmbH.com/
20-Mar-2012 Rev. A
Test conditions
VCE=2V, IC=100mA
V
IC=2A, IB=100mA
MHz VCE=2V,IC=500mA,f=100MHz
Any changes of specification will not be informed individually.
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