2SD1005 1A , 100V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 FEATURES Small Flat Package 4 High Breakdown Voltage Excellent DC Current Gain Linearity 1 CLASSIFICATION OF hFE(1) 2 B C 3 E A E Product-Rank 2SD1005-W 2SD1005-V 2SD1005-U Range 90~180 135~270 200~400 Marking BW BV BU C B D F G H Collector K J L 2 PACKAGE INFORMATION Package MPQ REF. 1 Leader Size A B C D E F Base SOT-89 1K 7 inch 3 Emitter Millimeter Min. Max. 4.40 4.60 3.94 4.25 1.40 1.60 2.25 2.60 1.50 1.85 0.89 1.20 Millimeter Min. Max. 0.40 0.58 1.50 TYP 3.00 TYP 0.32 0.52 0.35 0.44 REF. G H J K L ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Symbol Ratings Unit Collector-Base Voltage Parameter VCBO 100 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 5 V Collector Current-Continuous IC 1 A Collector Power Dissipation PC 500 mW RθJA 250 °C / W TJ, TSTG 150, -55~150 °C Maximum Junction to Ambient Junction & Storage Temperature ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Collector-Base Breakdown Voltage V(BR)CBO 100 - - V IC=0.1mA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO 80 - - V IC=1mA, IB=0 Emitter-Base Breakdown Voltage V(BR)EBO 5 - - V IE=0.1mA, IC=0 Collector Cut-Off Current ICBO - 0.1 µA VCB=100V, IE=0 Emitter Cut-Off Current IEBO - - 0.1 µA VEB=5V, IC=0 90 - 400 VCE=2V, IC=100mA 25 - - VCE=2V, IC=500mA DC Current Gain hFE* Test conditions Collector-Emitter Saturation voltage VCE(sat)* - - 0.5 V IC=500mA, IB=50mA Base-emitter saturation voltage VBE(sat)* - - 1.5 V IC=500mA, IB=50mA Base-emitter voltage VBE* 0.6 - 0.7 V VCE=10V,IC=10mA Transition Frequency fT - 160 - MHz VCE=5V,IC=10mA COB - 12 - pF Collector Output Capacitance VCB=10V, IE=0, f=1MHz *Pulse test http://www.SeCoSGmbH.com/ 10-Nov-2011 Rev. A Any changes of specification will not be informed individually. Page 1 of 1