KTC3879 0.05A , 35V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES A High Power Gain L 3 3 APPLICATIONS C B Top View High Frequency Application HF, VHF Band Amplifier Application 1 1 2 K E 2 D CLASSIFICATION OF hFE Product-Rank KTC3879-R KTC3879-O KTC3879-Y Range 40~80 70~140 120~240 Marking Code RR RO RY F REF. A B C D E F PACKAGE INFORMATION Package MPQ Leader Size SOT-23 3K 7 inch H G Millimeter Min. Max. 2.80 3.04 2.10 2.55 1.20 1.40 0.89 1.15 1.78 2.04 0.30 0.50 REF. G H J K L J Millimeter Min. Max. 0.09 0.18 0.45 0.60 0.08 0.177 0.6 REF. 0.89 1.02 Collector 3 1 Base 2 Emitter ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction, Storage Temperature Symbol Ratings Unit VCBO VCEO VEBO IC PC 35 30 4 50 150 V V V mA mW RθJA 833 °C / W TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage Transition Frequency V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE VCE(sat) VBE(sat) fT 35 30 4 40 100 - 0.1 0.2 1 240 0.4 1 - V V V µA µA µA http://www.SeCoSGmbH.com/ 15-Jul-2011 Rev. A V V MHz Test Conditions IC=100µA, IE=0 IC=100µA, IB=0 IE=100µA, IC=0 VCB=30V, IE=0 VCE=25V, IB=0 VEB=4V, IC=0 VCE=12V, IC=2mA IC=10mA, IB=1mA IC=10mA, IB=1mA VCE=10V, IC=1mA Any changes of specification will not be informed individually. Page 1 of 1