RoHS MBR2030CT-MBR2060CT MBR2030CT-MBR2060CT FEATURES · Schottky Barrier Chip · Guard Ring Die Construction for Transient Protection · Low Power Loss, High Efficiency · High Surge Capability · High Current Capability and Low Forward Voltage Drop · For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications ELECTRICAL CHARACTERISTICS (Tamb=25℃ Characteristic Symbol Peak Repetitive Reverse Voltage VRRM R T Working Peak Reverse Voltage VRWM DC Blocking Voltage VR PMS Reverse Voltage VR(RMS) C E L Average Rectified Output Current (Note 1) @ TC=125℃ Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load 1. ANODE 2. CATHODE 3. ANODE O 123 IC N C unless otherwise specified) MBR MBR MBR MBR MBR MBR 2030 2035 2040 2045 2050 2060 30 35 40 45 50 60 V 21 24.5 28 31.5 35 42 V O Unit IO 20 A IFSM 150 A (JEDEC Method) Forward Voltage Drop J E D T ,. L TO-220 SCHOTTKY BARRIER RECTIFIER E Peak Reverse Current @ IF=20A, TC=25℃ @ IF=20A, TC=125℃ @ IF=10A, TC=25℃ 0.84 0.72 0.70 0.57 VFM @ IF=10A, TC=125℃ at Rated DC Blocking Voltage @ TC= 25℃ @ TC=125℃ Typical Junction Capacitance (Note 2) W Operating and Storage Temperature Range 0.95 0.85 0.80 0.70 IRM 0.1 15 mA Cj 650 pF Tj, TSTG -65 to +150 ℃ Notes: 1. Thermal resistance junction to case mounted heat sink. 2. Measured at 1.OMHz and applied reverse voltage of 4.0V DC. WEJ ELECTRONIC CO. V Http:// www.wej.cn E-mail:[email protected]