BAV99W

RoHS
BAV99W
SOT-323
SWITCHING DIODE
FEATURES
D
T
,. L
O
1.01 REF
1.25±0.05
Power dissipation
2.30±0.05
mA
V
IC
Operating and storage junction temperature range
T J ,T stg: -55℃ to +150℃ C
R
T
2.00±0.05
IF :
150
Collector-base voltage
VR :
75
mW(Tamb=25℃)
1.30±0.03
PD :
200
Collector current
0.30
BAV99W
Unit : mm
N
O
Marking: KJG C
E
L
ELECTRICAL CHARACTERISTICS(Tamb=25℃
Parameter
E
Reverse breakdown voltage
J
E
Reverse voltage leakage current
Symbol
V(BR) R
unless
Test
VR=75V
VF
IF=1mA
IF=10mA
IF=50mA
IF=150mA
Diode capacitance
CD
VR=0V
Reveres recovery time
trr
W
conditions
IR= 100µA
IR
Forward voltage
otherwise
specified)
MIN
MAX
75
f=1MHz
UNIT
V
2.5
µA
715
855
1000
1250
mV
2
pF
4
nS
IF=IR=10mA
Irr=0.1×IR
RC=100Ω
SHEN ZHEN YONG ER JIA ELECTRONIC CO.,LTD.
Tel: 0755-8324 8022 Fax 0755-8324 9522
Http:// www.wej.cn
BAV99W
R
T
J
E
O
IC
C
O
N
C
E
L
E
W
SHEN ZHEN YONG ER JIA ELECTRONIC CO.,LTD.
Tel: 0755-8324 8022 Fax 0755-8324 9522
D
T
,. L
Http:// www.wej.cn
BAV99W
SOT-323 PACKAGE OUTLINE DIMENSIONS
D
e1
D
T
,. L
θ
O
E
E1
L
e
L1
IC
0.02
b
N
A1
c
A
A2
R
T
C
E
L
O
Dimensions In Millimeters
Symbol
A
A1
J
E
A2
b
c
D
W
E
C
Dimensions In Inches
Min
Max
Min
Max
0.900
1.100
0.035
0.043
0.000
0.100
0.000
0.004
0.900
1.000
0.035
0.039
0.200
0.400
0.008
0.016
0.080
0.150
0.003
0.006
2.000
2.200
0.079
0.087
E
1.150
1.350
0.045
0.053
E1
2.150
2.450
0.085
e
e1
1.200
1.400
0.047
0.525REF
L
0.096
0.026TYP
0.650TYP
0.055
0.021REF
L1
0.260
0.460
0.010
0.018
θ
0°
8°
0°
8°
SHEN ZHEN YONG ER JIA ELECTRONIC CO.,LTD.
Tel: 0755-8324 8022 Fax 0755-8324 9522
Http:// www.wej.cn