SOT-23 Plastic-Encapsulate Transistors SOT—23 C945LT1 1. BASE TRANSISTOR（ NPN ） 2. EMITTER 3. COLLECTOR Parameter Symbol ０．９５ ０．４ ０．９５ １．９ ２．４ １．３ ２．９ Power dissipation PCM : 0.2 W（Tamb=25℃） Collector current ICM : 0.15 A Collector-base voltage V(BR)CBO : 60 V Operating and storage junction temperature range T J ，T stg: -55℃ to +150 ELECTRICAL CHARACTERISTICS（Tamb=25℃ otherwise specified） １．０ FEATURES Unit : mm unless Test Collector-base breakdown voltage V(BR)CBO Ic= 1ｍA， Collector-emitter breakdown voltage V(BR)CEO Collector-emitter breakdown voltage V(BR)EBO conditions MIN TYP MAX UNIT 60 V Ic= 0.1mA， IB=0 50 V Ic= 100μA， IB=0 5 V IE=0 Collector cut-off current ICBO VCB=60 V , IE=0 0.1 μA Collector cut-off current ICEO VCB=45 V , IE=0 0.1 μA Emitter cut-off current IEBO VEB= 5V , 0.1 μA hFE(1) VCE= 6V, IC= 1mA hFE(2) VCE= 6V, IC= 0.1mA IC=0 130 400 DC current gain 40 Collector-emitter saturation voltage VCE(sat) IC=100 mA, IB= 10m A 0.3 V Base-emitter saturation voltage VBE(sat) IC=100 mA, IB= 10m A 1 V 1.4 V Base-emitter voltage VBEF Transition frequency fT CLASSIFICATION OF h FE(1) Ｒａｎｋ Ｒａｎｇｅ ＭＡＲＫＩＮＧ IE= 310m A VCE=6V, IC= 10mA f=30MHz 150 MHz Ｌ Ｈ １３０－２００ ２００－４００ ＣＲ SOT-23 PACKAGE OUTLINE DIMENSIONS D θ b L E E1 L1 0.2 e C Symbol A A1 A2 e1 Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 0.900 1.100 0.035 0.043 A1 0.000 0.100 0.000 0.004 A2 0.900 1.000 0.035 0.039 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 e e1 1.800 L 0.100 0.037TPY 0.950TPY 2.000 0.071 0.550REF 0.079 0.022REF L1 0.300 0.500 0.012 0.020 θ 0° 8° 0° 8°