JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate DIODE ＳＯＴ－３２３ BAS19W/20W/21W 1.BASE 2.EMITTER SWITCHING DIODE 3.COLLECTOR FEATURES １．０１ ＲＥＦ １．２５±０．０５ Power dissipation PD : 200 mW（Tamb=25℃） Collector current IF : 200 mA Collector-base voltage VR : 19W:120 V; 20W:150V ; 21W:200V Operating and storage junction temperature range T J ，T stg: -55℃ to +150℃ Parameter Symbol unless Test otherwise conditions BAS19W Reverse breakdown voltage BAS20W V(BR) R Diode IR= 100µA MAX 150 VR=150V UNIT V 0.1 µA 1000 1250 mV 5 pF 50 nS 200V voltage VF IF=100mA IF=200mA capacitance CD VR=0V Reveres recovery time MIN 100V IR BAS21W Forward specified） 200 BAS19W BAS20W KA8 KT2 KT3 100 BAS21W Reverse voltage leakage current ２．００±０．０５ Unit : mm Marking :BAS19W BAS20W BAS21W ELECTRICAL CHARACTERISTICS（Tamb=25℃ ０．３０ １．３０±０．０３ ２．３０±０．０５ trr f=1MHz IF=IR=30mA Irr=0.1×IR SOT-323 PACKAGE OUTLINE DIMENSIONS D e1 θ L1 E E1 L e 0.02 b Symbol A A2 A1 c Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 0.900 1.100 0.035 0.043 A1 0.000 0.100 0.000 0.004 A2 0.900 1.000 0.035 0.039 b 0.200 0.400 0.008 0.016 c 0.080 0.150 0.003 0.006 D 2.000 2.200 0.079 0.087 E 1.150 1.350 0.045 0.053 E1 2.150 2.450 0.085 e e1 1.200 1.400 0.047 0.525REF L 0.096 0.026TYP 0.650TYP 0.055 0.021REF L1 0.260 0.460 0.010 0.018 θ 0° 8° 0° 8°