BGM1013 MMIC wideband amplifier Rev. 5 — 19 September 2011 Product data sheet 1. Product profile 1.1 General description Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits Internally matched to 50 Good output match to 75 Very high gain; 35.5 dB at 1 GHz Upper corner frequency at 2.1 GHz 31 dB flat gain up to 2.2 GHz application 14 dBm saturated output power at 1 GHz High linearity (23 dBm IP3out and 43 dBc IM2) 40 dB isolation. 1.3 Applications Low Noise Block (LNB) Intermediate Frequency (IF) amplifiers Cable systems General purpose. 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VS DC supply voltage RF input; AC coupled - 5 6 V IS DC supply current 23 27.5 33 mA s212 insertion power gain f = 1 GHz 34.5 35.5 36.2 dB NF noise figure f = 1 GHz - 4.6 4.7 dB PL(sat) saturated load power f = 1 GHz 13.0 14.0 - dBm BGM1013 NXP Semiconductors MMIC wideband amplifier) 2. Pinning information Table 2. Pinning Pin Description 1 VS 2, 5 GND2 3 RF_OUT 4 GND1 6 Simplified outline 6 5 4 1 2 3 Symbol 1 6 RF_IN 3 4 2, 5 sym062 3. Ordering information Table 3. Ordering information Type number BGM1013 Package Name Description Version SC-88 plastic surface mounted package; 6 leads SOT363 4. Marking Table 4. Marking codes Type number Marking code BGM1013 C4- 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). BGM1013 Product data sheet Symbol Parameter Conditions RF input; AC coupled VS DC supply voltage IS DC supply current Ptot total power dissipation Tstg Min Max Unit - 6 V - 35 mA - 200 mW storage temperature 65 +150 C Tj junction temperature - 150 C PD maximum drive power - 10 dBm Tsp 90 C All information provided in this document is subject to legal disclaimers. Rev. 5 — 19 September 2011 © NXP B.V. 2011. All rights reserved. 2 of 15 BGM1013 NXP Semiconductors MMIC wideband amplifier) 6. Recommended operating conditions Table 6. Operating conditions Symbol Parameter VS Tamb Conditions Min Typ Max Unit supply voltage 4.5 5.0 5.5 V ambient temperature 40 25 85 C 7. Thermal characteristics Table 7. Thermal characteristics Symbol Parameter Conditions Typ Unit Rth(j-sp) thermal resistance from junction to solder point Ptot = 200 mW; Tsp 90 C 300 K/W 8. Characteristics Table 8. Characteristics VS = 5 V; IS = 27.5 mA; Tj = 25 C; measured on demo board; unless otherwise specified. Symbol Parameter VS DC supply voltage IS DC supply current s212 insertion power gain s112 s222 input return loss output return loss Conditions Min Typ Max Unit RF input; AC coupled - 5 6 V 23 27.5 33 mA f = 100 MHz 34.5 35.2 35.9 dB f = 1 GHz 34.5 35.5 36.2 dB f = 1.8 GHz 33.0 34.0 35.2 dB f = 2.2 GHz 30.5 31.8 33.1 dB f = 2.6 GHz 25.2 29.7 31.2 dB f = 3 GHz 24.0 26.1 27.9 dB f = 1 GHz 10.1 10.6 - dB f = 2.2 GHz 9.3 10.2 - dB f = 1 GHz 18 20 - dB f = 2.2 GHz 13 16 - dB ZL = 50 ZL = 75 s122 NF isolation noise figure f = 1 GHz 15 17 - dB f = 2.2 GHz 12 15 - dB f = 1 GHz 40 42 - dB f = 2.2 GHz 34 36 - dB f = 1 GHz - 4.6 4.7 dB f = 2.2 GHz - 4.9 5.1 dB GHz B bandwidth 3 dB below flat gain at f = 1 GHz - 2.1 - K stability factor f = 1 GHz 1.2 1.3 - f = 2.2 GHz 0.9 1.0 - PL(sat) saturated load power f = 1 GHz 13.0 14.0 - dBm f = 2.2 GHz 9.0 10.2 - dBm BGM1013 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 19 September 2011 © NXP B.V. 2011. All rights reserved. 3 of 15 BGM1013 NXP Semiconductors MMIC wideband amplifier) Table 8. Characteristics …continued VS = 5 V; IS = 27.5 mA; Tj = 25 C; measured on demo board; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit PL(1dB) load power at 1 dB gain compression f = 1 GHz 12.0 13.0 - dBm f = 2.2 GHz 7.0 8.1 - dBm input third order intercept point f = 1 GHz 14 12.8 - dBm f = 2.2 GHz 15 13.2 - dBm 21 22.7 - dBm 17 18.6 - dBm IP3in IP3out output third order intercept point f = 1 GHz f = 2.2 GHz IM2 second order intermodulation product f0 = 1 GHz; PD = 45 dBm (PL = 10 dBm) - 45 43 dBc f0 = 1 GHz; PD = 40 dBm (PL = 5 dBm) - 43 41 dBc 9. Application information Figure 1 shows a typical application circuit for the BGM1013 MMIC. The device is internally matched to 50 and therefore does not need any external matching. Output impedance is also very good to 75 load. The value of the input and output DC blocking capacitors C1 and C2 should be not more than 100 pF for applications above 100 MHz. Their values can be used to fine-tune the input and output impedance. For the RF-choke, optimal results are obtained with a good quality chip inductor like the TDK MLG1608 (0603) or a wire-wound SMD. The value of the inductor can be used to fine-tune the output impedance. The RF choke and supply decoupling components should be located as close as possible to the MMIC. Ground paths must be as short as possible. The printed-circuit board (PCB) top ground plane must be as close as possible to the MMIC, and ideally directly beneath it. When using vias, use at least 3 vias for the top ground plane in order to limit ground path inductance. Supply decoupling with C3 should be from pin 1 to the same top ground plane. VS VS 1 IN 6 RF in C3 L1 C2 3 OUT C1 RF out R1(1) BGM1013 SOT363 4 2, 5 GND1 GND2 001aab389 (1) R1 is omitted in typical application. Fig 1. BGM1013 Product data sheet Typical application circuit All information provided in this document is subject to legal disclaimers. Rev. 5 — 19 September 2011 © NXP B.V. 2011. All rights reserved. 4 of 15 BGM1013 NXP Semiconductors MMIC wideband amplifier) Figure 2 shows the PCB layout used for the typical application. 30 mm PH 30 mm IN OUT V+ PH IC1 C2 C1 L1 IN OUT C3 V+ 001aab395 Material = FR4; thickness = 0.6 mm; r = 4.6. Fig 2. Table 9. BGM1013 Product data sheet Printed-circuit board layout and component view for typical application List of components used for the typical application Component Description Value Dimensions C1, C2 multilayer ceramic chip capacitor 100 pF 0603 C3 multilayer ceramic chip capacitor 22 nF 0603 R1 SMD resistor - 0603 L1 SMD inductor 100 nH 0603 All information provided in this document is subject to legal disclaimers. Rev. 5 — 19 September 2011 © NXP B.V. 2011. All rights reserved. 5 of 15 BGM1013 NXP Semiconductors MMIC wideband amplifier) 9.1 Flat gain application: 31 dB between 800 MHz and 2.2 GHz By changing the components at the output of the amplifier, a flatter gain can be obtained. The gain is 31 dB 1 dB between 800 MHz and 2.2 GHz. PL(1dB) is 10 dBm at 1 GHz and 5.7 dBm at 2.2 GHz. 30 mm PH 30 mm IN OUT V+ PH IC1 C2 R1 C1 L1 IN OUT C3 V+ 001aab397 Fig 3. Table 10. Product data sheet List of components used for the 31 dB flat gain application[1] Component Description Value Dimensions C1 multilayer ceramic chip capacitor 100 pF 0603 C2 multilayer ceramic chip capacitor 4.7 pF 0603 C3 multilayer ceramic chip capacitor 22 nF 0603 R1 SMD resistor 27 0603 L1 SMD inductor 5.6 nH 0603 [1] BGM1013 Printed-circuit board layout and component view for 31 dB flat gain application Pin 2 should not be connected in order to obtain optimal input matching. All information provided in this document is subject to legal disclaimers. Rev. 5 — 19 September 2011 © NXP B.V. 2011. All rights reserved. 6 of 15 BGM1013 NXP Semiconductors MMIC wideband amplifier) 90° 1.0 +1 135° +0.5 0.8 45° +2 0.6 +0.2 0.4 +5 0.2 180° 0 0.2 0.5 1 100 MHz 2 5 10 0° 0 3 GHz −5 −0.2 −135° −2 −0.5 −45° −1 1.0 −90° 001aab399 IS = 27.5 mA; VS = 5 V; PD = 35 dBm; Zo = 50 . Fig 4. Input reflection coefficient (s11); typical values 90° 1.0 +1 135° +0.5 0.8 45° +2 0.6 +0.2 0.4 +5 100 MHz 0.2 180° 0 0.2 0.5 1 2 5 10 0° 0 3 GHz −5 −0.2 −135° −2 −0.5 −45° −1 −90° 1.0 001aab401 IS = 27.5 mA; VS = 5 V; PD = 35 dBm; Zo = 50 . Fig 5. BGM1013 Product data sheet Output reflection coefficient (s22); typical values All information provided in this document is subject to legal disclaimers. Rev. 5 — 19 September 2011 © NXP B.V. 2011. All rights reserved. 7 of 15 BGM1013 NXP Semiconductors MMIC wideband amplifier) 001aab402 0 |s12| 2 (dB) −10 001aab404 40 |s21| 2 (dB) 35 (1) −20 (2) 30 −30 (3) 25 −40 −50 20 0 1000 2000 3000 0 1000 2000 f (MHz) 3000 f (MHz) IS = 27.5 mA; VS = 5 V; PD = 35 dBm; Zo = 50 . PD = 35 dBm; Zo = 50 . (1) IS = 32.6 mA; VS = 5.5 V. (2) IS = 27.5 mA; VS = 5 V. (3) IS = 21.5 mA; VS = 4.5 V. (s122) Fig 6. Isolation as a function of frequency; typical values 001aab406 20 (1) PL (dBm) (2) Insertion gain (s212) as a function of frequency; typical values Fig 7. 001aab408 15 PL (dBm) (1) (2) 10 (3) (3) 10 5 0 0 −5 −10 −45 −35 −25 PD (dBm) −15 −10 −40 f = 1 GHz; Zo = 50 . (1) VS = 5.5 V. (1) VS = 5.5 V. (2) VS = 5 V. (3) VS = 4.5 V. (3) VS = 4.5 V. Load power as a function of drive power at 1 GHz; typical values BGM1013 Product data sheet −20 PD (dBm) −10 f = 2.2 GHz; Zo = 50 . (2) VS = 5 V. Fig 8. −30 Fig 9. Load power as a function of drive power at 2.2 GHz; typical values All information provided in this document is subject to legal disclaimers. Rev. 5 — 19 September 2011 © NXP B.V. 2011. All rights reserved. 8 of 15 BGM1013 NXP Semiconductors MMIC wideband amplifier) 001aab410 6 001aab411 5 K NF (dB) 4 5.5 3 5 (1) 2 (2) (3) 4.5 1 4 0 0 500 1000 1500 2000 2500 f (MHz) Zo = 50 . 0 1000 2000 3000 4000 f (MHz) IS = 27.5 mA; VS = 5 V; Zo = 50 . (1) VS = 5.5 V. (2) VS = 5 V. (3) VS = 4.5 V. Fig 10. Noise figure as a function of frequency; typical values BGM1013 Product data sheet Fig 11. Stability factor as a function of frequency; typical values All information provided in this document is subject to legal disclaimers. Rev. 5 — 19 September 2011 © NXP B.V. 2011. All rights reserved. 9 of 15 BGM1013 NXP Semiconductors MMIC wideband amplifier) Table 11. Scattering parameters VS = 5 V; IS = 27.5 mA; PD = 35 dBm; Zo = 50 ; Tamb = 25 C; measured on demo board. f (MHz) s11 s21 s12 s22 K-factor Magnitude (ratio) Angle (deg) Magnitude (ratio) Angle (deg) Magnitude (ratio) Angle (deg) Magnitude (ratio) Angle (deg) 100 0.259 19.3 57.79 2.5 0.01642 47.3 0.325 118.6 0.9 200 0.258 3.2 57.96 10.9 0.01096 20.7 0.248 110.9 1.0 400 0.270 25.6 60.08 41.2 0.00712 12.6 0.163 87.0 1.3 600 0.271 43.7 60.60 67.0 0.00751 13.9 0.134 63.2 1.2 800 0.281 61.5 60.74 95.6 0.00687 12.1 0.104 43.7 1.3 1000 0.296 80.1 60.44 121.2 0.00759 7.3 0.092 37.7 1.2 1200 0.317 102.3 59.21 147.1 0.00828 11.5 0.097 33.9 1.2 1400 0.335 127.7 57.01 172.9 0.00981 16.8 0.123 25.6 1.1 1600 0.334 158.1 54.46 160.8 0.01130 25.1 0.142 6.0 1.0 1800 0.331 169.6 50.31 134.1 0.01272 34.0 0.157 14.2 1.0 2000 0.326 130.6 44.63 104.7 0.01571 43.0 0.172 39.8 0.9 2200 0.309 95.9 38.92 79.4 0.01826 57.0 0.172 61.9 0.9 2400 0.287 59.0 33.31 55.5 0.01994 69.2 0.161 83.5 1.0 2600 0.257 20.4 28.20 33.1 0.01952 78.3 0.147 104.4 1.1 2800 0.224 15.5 23.60 13.1 0.02037 89.9 0.139 125.1 1.2 3000 0.198 50.7 20.24 4.8 0.02198 99.8 0.127 151.5 1.3 BGM1013 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 19 September 2011 © NXP B.V. 2011. All rights reserved. 10 of 15 BGM1013 NXP Semiconductors MMIC wideband amplifier) 10. Package outline Plastic surface-mounted package; 6 leads SOT363 D E B y X A HE 6 5 v M A 4 Q pin 1 index A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC SOT363 JEITA SC-88 EUROPEAN PROJECTION ISSUE DATE 04-11-08 06-03-16 Fig 12. Package outline SOT363 (SC-88) BGM1013 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 19 September 2011 © NXP B.V. 2011. All rights reserved. 11 of 15 BGM1013 NXP Semiconductors MMIC wideband amplifier) 11. Revision history Table 12. Revision history Document ID Release date Data sheet status Change notice Supersedes BGM1013 v.5 20110919 Product data sheet - BGM1013 v.4 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. BGM1013 v.4 20060501 Product data sheet - BGM1013 v.3 BGM1013 v.3 (9397 750 14413) 20041209 Product data sheet - BGM1013 v.2 BGM1013 v.2 (9397 750 14229) 20041130 Product data sheet - BGM1013 v.1 BGM1013 v.1 (9397 750 13469) 20040831 Product data sheet - - BGM1013 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 19 September 2011 © NXP B.V. 2011. All rights reserved. 12 of 15 BGM1013 NXP Semiconductors MMIC wideband amplifier) 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. 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Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. 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Export might require a prior authorization from national authorities. BGM1013 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 19 September 2011 © NXP B.V. 2011. All rights reserved. 13 of 15 BGM1013 NXP Semiconductors MMIC wideband amplifier) Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BGM1013 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 19 September 2011 © NXP B.V. 2011. All rights reserved. 14 of 15 BGM1013 NXP Semiconductors MMIC wideband amplifier) 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Recommended operating conditions. . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 4 Flat gain application: 31 dB between 800 MHz and 2.2 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Contact information. . . . . . . . . . . . . . . . . . . . . 14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 19 September 2011 Document identifier: BGM1013