BF996S N-channel dual-gate MOS-FET

DISCRETE SEMICONDUCTORS
DATA SHEET
BF996S
N-channel dual-gate MOS-FET
Product specification
April 1991
NXP Semiconductors
Product specification
N-channel dual-gate MOS-FET
BF996S
FEATURES
DESCRIPTION
 Protected against excessive input voltage surges by
integrated back-to-back diodes between gates
and source.
Depletion type field-effect transistor in a plastic SOT143
microminiature package with interconnected source
and substrate.
APPLICATIONS
 RF applications such as:
d
handbook, halfpage
4
3
– UHF television tuners
g
2
g1
– Professional communication equipment.
PINNING
PIN
SYMBOL
1
s, b
DESCRIPTION
1
2
s,b
source
2
d
drain
3
g2
gate 2
4
g1
gate 1
Top view
MAM039
Marking code: MHp.
Fig.1 Simplified outline (SOT143) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VDS
drain-source voltage

20
V
ID
drain current

30
mA
Ptot
total power dissipation

200
mW
Tj
junction temperature

150
C
18

mS
2.6
pF
Y fs
transfer admittance
up to Tamb = 60 C
f = 1 kHz; ID = 10 mA; VDS = 15 V; VG2S = 4 V
Cig-1s
input capacitance at gate 1 f = 1 MHz; ID = 10 mA; VDS = 15 V; VG2S = 4 V 2.3
Crs
feedback capacitance
f = 1 MHz; ID = 10 mA; VDS = 15 V; VG2S = 4 V 25
F
noise figure
f = 200 MHz GS = 2 mS; BS = BSopt;
ID = 10 mA; VDS = 15 V; VGS2 = 4 V
April 1991
2
1

fF

dB
NXP Semiconductors
Product specification
N-channel dual-gate MOS-FET
BF996S
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage

20
V
ID
drain current (DC)

30
mA
ID(AV)
average drain current

30
mA
IG1-S
gate 1 source

10
mA
IG1-S
gate 2 source

10
mA
Ptot
total power dissipation

200
mW
Tstg
storage temperature range
65
+150
C
Tj
junction temperature

150
C
up to Tamb = 60 C; note 1
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
in free air; note 1
Note to the Limiting values and the Thermal characteristics
1. Device mounted on a ceramic substrate of 8  10  0.7 mm.
MGE792
200
handbook, halfpage
Ptot
(mW)
100
0
0
100
Tamb (°C)
200
Fig.2 Power derating curve.
April 1991
3
VALUE
UNIT
460
K/W
NXP Semiconductors
Product specification
N-channel dual-gate MOS-FET
BF996S
STATIC CHARACTERISTICS
Tj = 25 C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
IG1SS
gate cut-off current
VG1-S = 5 V; VG2-S = VDS = 0

50
nA
IG2SS
gate cut-off current
VG2-S = 5 V; VG1-S = VDS = 0

50
nA
V(BR)G1-SS
gate-source breakdown voltage
IG1-S = 10 mA; VG2-S = VDS = 0
6
20
V
V(BR)G2-SS
gate-source breakdown voltage
IG2-S = 10 mA; VG1-S = VDS = 0
6
20
V
IDSS
drain current
VDS = 15 V; VG1-S = 0; VG2-S = 4 V
4
20
mA
V(P)G1-S
gate-source cut-off current
ID = 20 A; VDS = 15 V; VG2-S = 4 V

2.5
V
V(P)G2-S
gate-source cut-off current
ID = 20 A; VDS = 15 V; VG1-S = 0

2
V
DYNAMIC CHARACTERISTICS
Measuring conditions (common source): ID = 10 mA; VDS = 15 V; VG2-S = 4 V; Tamb = 25 C.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
transfer admittance
f = 1 kHz
15
18

mS
Cig1-s
input capacitance at gate 1
f = 1 MHz

2.3
2.6
pF
Cig2-s
input capacitance at gate 2
f = 1 MHz

1.2

pF
Crs
feedback capacitance
f = 1 MHz

25

fF
Cos
output capacitance
f = 1 MHz

0.8

pF
F
noise figure
f = 200 MHz; GS = 2 mS; BS = BSopt

1

dB
f = 800 MHz; GS = 3.3 mS; BS = BSopt 
1.8

dB
GP
power gain
f = 200 MHz; GS = 2 mS; BS = BSopt;
GL = 0.5 mS; BL = BLopt

25

dB
f = 800 MHz; GS = 3.3 mS;
BS = BSopt; GL = 1 mS; BL = BLopt

18

dB
Y fs
April 1991
4
NXP Semiconductors
Product specification
N-channel dual-gate MOS-FET
BF996S
PACKAGE OUTLINE
Plastic surface-mounted package; 4 leads
SOT143B
D
B
E
A
X
y
HE
v M A
e
bp
w M B
4
3
Q
A
A1
c
1
2
Lp
b1
e1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.9
0.1
0.48
0.38
0.88
0.78
0.15
0.09
3.0
2.8
1.4
1.2
1.9
1.7
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
JEITA
ISSUE DATE
04-11-16
06-03-16
SOT143B
April 1991
EUROPEAN
PROJECTION
5
NXP Semiconductors
Product specification
N-channel dual-gate MOS-FET
BF996S
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
Right to make changes  NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
DEFINITIONS
Product specification  The information and data
provided in a Product data sheet shall define the
specification of the product as agreed between NXP
Semiconductors and its customer, unless NXP
Semiconductors and customer have explicitly agreed
otherwise in writing. In no event however, shall an
agreement be valid in which the NXP Semiconductors
product is deemed to offer functions and qualities beyond
those described in the Product data sheet.
Suitability for use  NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in life support, life-critical or safety-critical systems or
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of an NXP Semiconductors product can reasonably be
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accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
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DISCLAIMERS
Limited warranty and liability  Information in this
document is believed to be accurate and reliable.
However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to
the accuracy or completeness of such information and
shall have no liability for the consequences of use of such
information.
Applications  Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
In no event shall NXP Semiconductors be liable for any
indirect, incidental, punitive, special or consequential
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removal or replacement of any products or rework
charges) whether or not such damages are based on tort
(including negligence), warranty, breach of contract or any
other legal theory.
Customers are responsible for the design and operation of
their applications and products using NXP
Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole
responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as
for the planned application and use of customer’s third
party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks
associated with their applications and products.
Notwithstanding any damages that customer might incur
for any reason whatsoever, NXP Semiconductors’
aggregate and cumulative liability towards customer for
the products described herein shall be limited in
accordance with the Terms and conditions of commercial
sale of NXP Semiconductors.
April 1991
6
NXP Semiconductors
Product specification
N-channel dual-gate MOS-FET
BF996S
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described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
NXP Semiconductors does not accept any liability related
to any default, damage, costs or problem which is based
on any weakness or default in the customer’s applications
or products, or the application or use by customer’s third
party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and
products using NXP Semiconductors products in order to
avoid a default of the applications and the products or of
the application or use by customer’s third party
customer(s). NXP does not accept any liability in this
respect.
Quick reference data  The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Non-automotive qualified products  Unless this data
sheet expressly states that this specific NXP
Semiconductors product is automotive qualified, the
product is not suitable for automotive use. It is neither
qualified nor tested in accordance with automotive testing
or application requirements. NXP Semiconductors accepts
no liability for inclusion and/or use of non-automotive
qualified products in automotive equipment or
applications.
Limiting values  Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions above those given in the Recommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
permanently and irreversibly affect the quality and
reliability of the device.
In the event that customer uses the product for design-in
and use in automotive applications to automotive
specifications and standards, customer (a) shall use the
product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and
specifications, and (b) whenever customer uses the
product for automotive applications beyond NXP
Semiconductors’ specifications such use shall be solely at
customer’s own risk, and (c) customer fully indemnifies
NXP Semiconductors for any liability, damages or failed
product claims resulting from customer design and use of
the product for automotive applications beyond NXP
Semiconductors’ standard warranty and NXP
Semiconductors’ product specifications.
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Semiconductors products are sold subject to the general
terms and conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, unless otherwise
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Semiconductors hereby expressly objects to applying the
customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
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may be interpreted or construed as an offer to sell products
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April 1991
7
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Printed in The Netherlands
R77/02/pp8
Date of release:April 1991