BA591 Band-switching diode

DISCRETE SEMICONDUCTORS
DATA SHEET
BA591
Band-switching diode
Product specification
Supersedes data of 1998 Aug 31
2004 Feb 17
NXP Semiconductors
Product specification
Band-switching diode
BA591
FEATURES
PINNING
 Very small plastic SMD package
PIN
DESCRIPTION
 Low diode capacitance: max. 1.05 pF
1
cathode
 Low diode forward resistance: max. 0.7 
2
anode
 Small inductance.
APPLICATIONS
1
2
 Low loss band-switching in VHF television tuners
 Surface mount band-switching circuits.
sym006
DESCRIPTION
Marking code: A1.
The marking bar indicates the cathode.
The BA591 is a planar, high performance band-switching
diode in the very small SOD323 (SC-76) SMD plastic
package.
Fig.1
Simplified outline (SOD323; SC-76) and
symbol.
ORDERING INFORMATION
TYPE
NUMBER
BA591
PACKAGE
NAME

DESCRIPTION
VERSION
plastic surface mounted package; 2 leads
SOD323
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VR
continuous reverse voltage

35
V
IF
continuous forward current

100
mA
Ptot
total power dissipation

500
mW
Tstg
storage temperature
65
+150
C
Tj
junction temperature
65
+150
C
2004 Feb 17
Ts = 90 C
2
NXP Semiconductors
Product specification
Band-switching diode
BA591
CHARACTERISTICS
Tj = 25 C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VF
forward voltage
IF = 10 mA

1
V
IR
reverse current
VR = 20 V

20
nA
Cd
diode capacitance
f = 1 MHz; note 1; see Fig.2
VR = 1 V
0.8
1.05
pF
VR = 3 V
0.65
0.9
pF
IF = 3 mA
0.45
0.7

IF = 10 mA
0.36
0.5

100

k
2

nH
rD
diode forward resistance
1/gp
reverse resistance
LS
series inductance
f = 100 MHz; note 1; see Fig.3
VR = 1 V; f = 100 MHz; note 1
Note
1. Guaranteed on AQL basis; inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-s)
2004 Feb 17
PARAMETER
thermal resistance from junction to soldering point
3
VALUE
UNIT
120
K/W
NXP Semiconductors
Product specification
Band-switching diode
BA591
GRAPHICAL DATA
MGL477
1.6
MGL476
10
handbook, halfpage
handbook, halfpage
Cd
(pF)
rD
(Ω)
1.2
1
0.8
0.4
10−1
10−1
0
0
10
20
VR (V)
30
Tj = 25 C; f = 1 MHz.
Tj = 25 C; f = 100 MHz.
Fig.2
Fig.3
Diode capacitance as a function of reverse
voltage; typical values.
2004 Feb 17
4
1
10
IF (mA)
102
Diode forward resistance as a function of
forward current; typical values.
NXP Semiconductors
Product specification
Band-switching diode
BA591
PACKAGE OUTLINE
Plastic surface-mounted package; 2 leads
SOD323
A
D
E
X
v
HD
M
A
Q
1
2
bp
A
A1
(1)
c
Lp
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
HD
Lp
Q
v
mm
1.1
0.8
0.05
0.40
0.25
0.25
0.10
1.8
1.6
1.35
1.15
2.7
2.3
0.45
0.15
0.25
0.15
0.2
Note
1. The marking bar indicates the cathode
OUTLINE
VERSION
SOD323
2004 Feb 17
REFERENCES
IEC
JEDEC
JEITA
SC-76
5
EUROPEAN
PROJECTION
ISSUE DATE
03-12-17
06-03-16
NXP Semiconductors
Product specification
Band-switching diode
BA591
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
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DEFINITIONS
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2004 Feb 17
6
NXP Semiconductors
Product specification
Band-switching diode
BA591
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Limiting values  Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions above those given in the Recommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
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2004 Feb 17
7
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Printed in The Netherlands
R77/03/pp8
Date of release: 2004 Feb 17