DISCRETE SEMICONDUCTORS DATA SHEET BT132 series D Triacs logic level Product specification January 1998 NXP Semiconductors Product specification Triacs logic level GENERAL DESCRIPTION Glass passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. PINNING - TO92 PIN BT132 series D QUICK REFERENCE DATA SYMBOL PARAMETER MAX. MAX. UNIT VDRM IT(RMS) ITSM BT132Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current 500D 500 1 16 PIN CONFIGURATION 600D 600 1 16 V A A SYMBOL DESCRIPTION 1 main terminal 2 2 gate 3 main terminal 1 T2 T1 G 3 2 1 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER VDRM Repetitive peak off-state voltages IT(RMS) ITSM RMS on-state current Non-repetitive peak on-state current 2 It dIT/dt IGM VGM PGM PG(AV) Tstg Tj 2 I t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature CONDITIONS MIN. - full sine wave; Tlead ≤51 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 1.5 A; IG = 0.2 A; dIG/dt = 0.2 A/μs T2+ G+ T2+ GT2- GT2- G+ over any 20 ms period MAX. -500 5001 UNIT -600 6001 V - 1 A - 16 17.6 1.28 A A A2s -40 - 50 50 50 10 2 5 5 0.5 150 125 A/μs A/μs A/μs A/μs A V W W ˚C ˚C 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 3 A/μs. January 1998 1 Rev 1.000 1;3 Semiconductors Product specification Triacs logic level BT132 series D THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-lead Thermal resistance junction to lead Thermal resistance junction to ambient full cycle half cycle pcb mounted;lead length = 4mm Rth j-a MIN. TYP. MAX. UNIT - 150 60 80 - K/W K/W K/W MIN. TYP. MAX. UNIT T2+ G+ T2+ GT2- GT2- G+ - 2.0 2.5 2.5 5.0 5 5 5 10 mA mA mA mA T2+ G+ T2+ GT2- GT2- G+ VD = 12 V; IGT = 0.1 A IT = 5 A VD = 12 V; IT = 0.1 A VD = 400 V; IT = 0.1 A; Tj = 125 ˚C VD = VDRM(max); Tj = 125 ˚C 0.25 - 1.6 4.5 1.2 2.2 1.2 1.4 0.7 0.4 0.1 10 15 10 15 10 1.70 1.5 0.5 mA mA mA mA mA V V V mA MIN. TYP. MAX. UNIT - 5 - V/μs - 2 - μs STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS IGT Gate trigger current VD = 12 V; IT = 0.1 A IL Latching current IH VT VGT Holding current On-state voltage Gate trigger voltage ID Off-state leakage current VD = 12 V; IGT = 0.1 A DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS dVD/dt Critical rate of rise of off-state voltage Gate controlled turn-on time VDM = 67% VDRM(max); Tj = 125 ˚C; exponential waveform; RGK = 1 kΩ ITM = 6 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/μs tgt January 1998 2 Rev 1.000 1;3 Semiconductors Product specification Triacs logic level 1.4 BT132 series D BT132D Ptot / W Tmb(max) / C =180 1.2 120 1 1 IT(RMS) / A 41 53 60 0.6 30 51 C 1 65 0.8 90 0.8 BT132D 1.2 77 0.6 89 0.4 0.4 101 0.2 113 00 0 0.2 0.4 0.6 IT(RMS) / A 0.8 0.2 125 1.2 1 0 -50 3 time 24 Tj initial = 25 C max 100 1.5 dI T/dt limit 1 T2- G+ quadrant 0.5 100us 1ms T/s 10ms 0 0.01 100ms Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp ≤ 20ms. ITSM / A BT132D IT(RMS) / A 2.5 T 20 150 ITSM IT 10 10us 100 Fig.4. Maximum permissible rms current IT(RMS) , versus lead temperature Tlead. BT132D ITSM / A 50 Tmb / C Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where α = conduction angle. 1000 0 1.6 I TSM T 15 10 Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tlead ≤ 51˚C. BT136 IT 0.1 1 surge duration / s VGT(Tj) VGT(25 C) BT136 1.4 time Tj initial = 25 C max 1.2 10 1 0.8 5 0.6 0 10 100 Number of cycles at 50Hz 0.4 -50 1000 Fig.3. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz. January 1998 0 50 Tj / C 100 150 Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25˚C), versus junction temperature Tj. 3 Rev 1.000 1;3 Semiconductors Product specification Triacs logic level 3 BT132 series D IGT(Tj) IGT(25 C) Tj = 125 C Tj = 25 C T2+ G+ T2+ GT2- GT2- G+ 2.5 typ 10 max Vo = 1.27 V Rs = 0.091 ohms 8 2 6 1.5 4 1 2 0.5 0 -50 0 50 Tj / C 100 0 150 Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25˚C), versus junction temperature Tj. 3 BT136 IT / A 12 BT136D IL(Tj) IL(25 C) 0 0.5 1 1.5 VT / V 2 2.5 3 Fig.10. Typical and maximum on-state characteristic. 100 TRIAC 2.5 BT134W Zth j-sp (K/W) 10 unidirectional 2 bidirectional 1 1.5 P D 1 tp 0.1 0.5 t 0 -50 0 50 Tj / C 100 0.01 10us 150 IH(Tj) IH(25C) 1ms 10ms 0.1s 1s 10s tp / s Fig.11. Transient thermal impedance Zth j-lead, versus pulse width tp. Fig.8. Normalised latching current IL(Tj)/ IL(25˚C), versus junction temperature Tj. 3 0.1ms 1000 TRIAC dVD/dt (V/us) 2.5 100 2 1.5 10 1 0.5 0 -50 0 50 Tj / C 100 1 150 50 100 150 Tj / C Fig.12. Typical, critical rate of rise of off-state voltage, dVD/dt versus junction temperature Tj. Fig.9. Normalised holding current IH(Tj)/ IH(25˚C), versus junction temperature Tj. January 1998 0 4 Rev 1.000 1;3 Semiconductors Product specification Triacs logic level BT132 series D MECHANICAL DATA Dimensions in mm 2.54 Net Mass: 0.2 g 0.66 0.56 1.6 4.2 max 4.8 max 5.2 max 12.7 min 0.48 0.40 321 0.40 min Fig.13. TO92 Variant; plastic envelope. Notes 1. Epoxy meets UL94 V0 at 1/8". January 1998 5 Rev 1.000 NXP Semiconductors Legal information DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. 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