AN10951 1805 MHz to 1880 MHz asymmetrical Doherty amplifier with the BLF7G20LS-90P and BLF7G21LS-160P Rev. 1 — 10 December 2010 Application note Document information Info Content Keywords Doherty architecture, Digital PreDistortion (DPD), IS-95, multi-carrier GSM, W-CDMA, pulse, BLF7G20LS-90P, BLF7G21LS-160P Abstract This application note describes the design and performance of an asymmetrical Doherty amplifier in the 1805 MHz to 1880 MHz band using the BLF7G20LS-90P and the BLF7G21LS-160P LDMOS transistors. AN10951 NXP Semiconductors 1805 MHz to 1880 MHz asymmetrical Doherty amplifier Revision history Rev Date Description 1 20101210 Initial version Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] AN10951 Application note All information provided in this document is subject to legal disclaimers. Rev. 1 — 10 December 2010 © NXP B.V. 10 December 2010. All rights reserved. 2 of 19 AN10951 NXP Semiconductors 1805 MHz to 1880 MHz asymmetrical Doherty amplifier 1. Introduction This application note describes the design and performance of an asymmetrical Doherty amplifier in the 1805 MHz to 1880 MHz band using the BLF7G20LS-90P and the BLF7G21LS-160P LDMOS transistors. The asymmetrical Doherty amplifier design uses NXP Semiconductors’ seventh generation push-pull LDMOS transistors BLF7G20LS-90P and BLF7G21LS-160P on a 0.51 mm (0.020") thick Rogers 4350, Printed-Circuit Board (PCB). The BLF7G20LS-90P is rated at 90 W and operates as the main amplifier for the carrier signal. The BLF7G21LS-160P is rated at 160 W and operates as the amplifier for peak signals. Both devices are internally matched at the input and output. 019aaa400 Fig 1. The assembled asymmetrical Doherty amplifier 2. Test summary Amplifier under test: board number: 1339; date code m1001/D101504; Rogers 4350 PCB, thickness of 0.51 mm (0.020”). The amplifier was characterized under the following conditions: • Frequency band: 1805 MHz to 1880 MHz • Network analyzer measurements for gain (Gp), delay (td) and Input Return Loss (IRL) at: – output power (PL) = 46 dBm – drain-source voltage (VDS) = 28 V – quiescent drain current (IDq) (main amplifier) = 350 mA – gate-source voltage (VGS) (peak amplifier) = 0.3 V • Peak output power measurement: – using the standard CDMA IS-95 signal, the peak-to-average ratio (PAR) = 9.7 dB at 0.01 % probability on the CCDF to determine output power (PL) where the PAR reaches a value of 6.7 dB at 0.01 % probability on the CCDF. This is called the 3 dB compression point. VDS = 28 V, IDq (main amplifier) = 350 mA and VGS (peak amplifier) = 0.3 V AN10951 Application note All information provided in this document is subject to legal disclaimers. Rev. 1 — 10 December 2010 © NXP B.V. 10 December 2010. All rights reserved. 3 of 19 AN10951 NXP Semiconductors 1805 MHz to 1880 MHz asymmetrical Doherty amplifier – using a pulsed signal and measuring the 1 dB and 3 dB compression points with a pulse width of 12 s at 10 % duty cycle: VDS = 28 V, IDq (main amplifier) = 350 mA and VGS (peak amplifier) = 0.3 V • IS-95 measurement at VDS = 28 V, IDq (main amplifier) = 350 mA and VGS = 0.3 V • 6-carrier GSM measurements using a 6-carrier GSM signal with a 4 MHz spacing, PAR = 7.5 dB at 0.01 % probability: VDS = 28 V, IDq (main amplifier) = 350 mA and VGS (peak amplifier) = 0.3 V • Digital PreDistortion (DPD) measurements using a DPD system: – 2-carrier W-CDMA signal, 10 MHz spacing, peak-to-average ratio (PAR) = 7.6 dB at 0.01 % probability (total signal), VDS = 28 V, IDq (main amplifier) = 350 mA and VGS (peak amplifier) = 0.3 V – 2-carrier LTE signal, 10 MHz spacing, 10 MHz carrier bandwidth, peak-to-average ratio (PAR) = 7.6 dB at 0.01 % probability (total signal), VDS = 28 V, IDq (main amplifier) = 350 mA, VGS (peak amplifier) = 0.3 V 3. RF Performance 3.1 Network analyzer measurements Network analyzer measurements were performed under the following conditions: • • • • PL = 46 dBm VDS = 28 V IDq (main amplifier) = 350 mA VGS (peak amplifier) = 0.3 V 019aaa382 17.5 6 IRL (dB) Gp (dB) 16.5 019aaa383 4.5 IRL (dB) 2 3.5 −2 2.5 −6 1.5 −10 0.5 2 (1) (1) 15.5 14.5 (2) 13.5 12.5 1.74 1.78 1.82 1.86 −14 1.90 1.94 f (GHz) −2 (2) −0.5 1.74 (1) Gp. (1) td. (2) IRL. Power gain and input return loss as a function of frequency AN10951 Application note Fig 3. −6 −10 (2) IRL. Fig 2. 6 td (ns) 1.78 1.82 1.86 −14 1.90 1.94 f (GHz) Delay time and input return loss as a function of frequency All information provided in this document is subject to legal disclaimers. Rev. 1 — 10 December 2010 © NXP B.V. 10 December 2010. All rights reserved. 4 of 19 AN10951 NXP Semiconductors 1805 MHz to 1880 MHz asymmetrical Doherty amplifier 3.2 Peak output power measurements Two methods were used to measure peak output power. • Using a standard IS-95 signal (PAR = 9.7 dB at 0.01 % probability on the CCDF), to determine the output power when PAR reaches 6.7 dB at 0.01 % probability on the CCDF, measured as the 3 dB compression point • Using the pulsed signal (12 s width and 10 % duty cycle), measuring the 1 dB and 3 dB compression points The peak output power measurements were performed under the following conditions: • Bias: VDS = 28 V • IDq (main amplifier) = 350 mA • VGS (peak amplifier) = 0.3 V 019aaa384 55.4 PL(M) (dBm) 019aaa385 17 Gp (dB) 55.2 16 55.0 15 54.8 14 54.6 13 54.4 1800 (1) (2) (3) 12 1820 1840 1860 1880 35 40 f (MHz) 45 50 55 PL(M) (dBm) (1) f = 1805 MHz. (2) f = 1842.5 MHz. (3) f = 1880 MHz. Fig 4. Peak output power as a function of frequency AN10951 Application note Fig 5. Power gain as a function of peak output power All information provided in this document is subject to legal disclaimers. Rev. 1 — 10 December 2010 © NXP B.V. 10 December 2010. All rights reserved. 5 of 19 AN10951 NXP Semiconductors 1805 MHz to 1880 MHz asymmetrical Doherty amplifier 3.3 IS-95 measurements The IS-95 measurements were performed under the following conditions: • Bias: VDS = 28 V • IDq (main amplifier) = 350 mA • VGS (peak amplifier) = 0.3 V Remark: When calculating the drain efficiency, the increase in current caused by the gate temperature compensation circuit ( 50 mA) must be subtracted from the drain current value. This is approximately 50 mA. 019aaa386 17 ηD (%) Gp (dB) 55 019aaa387 10 (1) (2) (3) PAR (dB) 9 16 50 8 (1) (2) (3) 15 45 (4) (5) (6) 7 40 6 14 41 43 45 47 49 PL(AV) (dBm) 41 43 45 47 49 PL (dBm) (1) Gp at 1805 MHz. (1) f = 1805 MHz. (2) Gp at 1842.5 MHz. (2) f = 1842.5 MHz. (3) Gp at 1880 MHz. (3) f = 1880 MHz. (4) D at 1805 MHz. (5) D at 1842.5 MHz. (6) D at 1880 MHz. Fig 6. Power gain and drain efficiency as a function of average output power, IS-95 AN10951 Application note Fig 7. PAR as a function of output power All information provided in this document is subject to legal disclaimers. Rev. 1 — 10 December 2010 © NXP B.V. 10 December 2010. All rights reserved. 6 of 19 AN10951 NXP Semiconductors 1805 MHz to 1880 MHz asymmetrical Doherty amplifier 3.4 6-Carrier GSM measurements The 6-carrier GSM measurements were performed under the following conditions: • • • • Bias: VDS = 28 V, IDq (main amplifier) = 350 mA and VGS (peak amplifier) = 0.3 V Test signal: 6 carrier GSM, 4 MHz spacing, PAR = 7.5 dB at 0.01% probability IMD3: 4 MHz offset from the closest carrier IMD5: 8 MHz offset from the closest carrier 019aaa388 18 Gp (dB) 019aaa389 60 ηD (%) 17 40 16 (1) (2) (3) (1) (2) (3) 15 20 14 13 0 38 42 46 50 38 42 PL (dBm) (1) f = 1805 MHz. (2) f = 1842.5 MHz. (2) f = 1842.5 MHz. (3) f = 1880 MHz. (3) f = 1880 MHz. Power gain as a function of output power AN10951 Application note 50 PL (dBm) (1) f = 1805 MHz. Fig 8. 46 Fig 9. Drain efficiency as a function of output power All information provided in this document is subject to legal disclaimers. Rev. 1 — 10 December 2010 © NXP B.V. 10 December 2010. All rights reserved. 7 of 19 AN10951 NXP Semiconductors 1805 MHz to 1880 MHz asymmetrical Doherty amplifier 019aaa390 −20 IMD3 (dBc) 019aaa391 −22 (1) (2) IMD5 (dBc) (1) (2) −24 −26 (3) (3) (4) (4) −28 −30 (5) (5) −32 −34 (6) (6) −36 38 42 46 −38 50 38 42 PL (dBm) 50 PL (dBm) (1) 1805 MHz IMD3 low. (1) 1805 MHz IMD5 low. (2) 1805 MHz IMD3 high. (2) 1805 MHz IMD5 high. (3) 1842.5 MHz IMD3 low. (3) 1842.5 MHz IMD5 low. (4) 1842.5 MHz IMD3 high. (4) 1842.5 MHz IMD5 high. (5) 1880 MHz IMD3 low. (5) 1880 MHz IMD5 low. (6) 1880 MHz IMD3 high. (6) 1880 MHz IMD5 high. Fig 10. IMD3 as a function of output power 46 Fig 11. IMD5 as a function of output power 4. DPD Measurements 4.1 DPD measurements with 2-carrier W-CDMA The DPD measurements were performed using a Texas Instruments DPD system under the following conditions: • 2-carrier W-CDMA signal, spacing: 10 MHz, peak-to-average ratio (PAR) = 7.6 dB at 0.01 % probability (total signal) • • • • AN10951 Application note Channel bandwidth = 3.84 MHz IMD: 10 MHz offset from the carrier (IBW = 3.84 MHz) VDS = 28 V, IDq (main amplifier) = 350 mA, VGS (peak amplifier) = 0.3 V IBW = 3.84 MHz All information provided in this document is subject to legal disclaimers. Rev. 1 — 10 December 2010 © NXP B.V. 10 December 2010. All rights reserved. 8 of 19 AN10951 NXP Semiconductors 1805 MHz to 1880 MHz asymmetrical Doherty amplifier 1 probability (%) 10−1 10−2 10−3 10−4 10−5 10−6 0 dB 10 dB 20 dB PAR (dB) 019aaa392 Test signal: 2-carrier W-CDMA, 10 MHz spacing; PAR = 7.6 dB at 0.01% probability. Fig 12. CCDF test signal 4.1.1 1.805 GHz DPD correction The following DPD measurements were performed under the following conditions: • • • • fc = 1.805 GHz PL = 46.8 dBm IMD = 10 MHz offset from the carrier Channel bandwidth = 3.84 MHz 40 30 20 10 0 −10 −20 −30 −40 −50 relative dB 1780 (1) (2) 1785 1790 1795 1800 1805 1810 1815 1820 1825 1830 f (MHz) 019aaa393 (1) IMD uncorrected: 25.4 dBc (lower), 24.9 dBc (upper). (2) IMD corrected: 53.2 dBc (lower), 53.6 dBc (upper). Fig 13. DPD measurement, fc = 1.805 GHz 4.1.2 1.8425 GHz DPD correction The following DPD measurements were performed under the following conditions: • • • • AN10951 Application note fc = 1.8425 GHz PL = 46.8 dBm IMD = 10 MHz offset from the carrier IBW = 3.84 MHz All information provided in this document is subject to legal disclaimers. Rev. 1 — 10 December 2010 © NXP B.V. 10 December 2010. All rights reserved. 9 of 19 AN10951 NXP Semiconductors 1805 MHz to 1880 MHz asymmetrical Doherty amplifier 40 30 20 10 0 −10 −20 −30 −40 −50 relative dB (1) (2) 1812.5 1817.5 1822.5 1827.5 1832.5 1837.5 1842.5 1847.5 1852.5 1857.5 1862.5 1867.5 1872.5 f (MHz) 019aaa394 (1) IMD uncorrected: 27.6 dBc (lower), 29.6 dBc (upper). (2) IMD corrected: 54.1 dBc (lower), 55.5 dBc (upper). Fig 14. DPD measurement, fc = 1.8425 GHz 4.1.3 1.88 GHz DPD correction The following DPD measurements were performed under the following conditions: • • • • fc = 1.88 GHz PL = 46.8 dBm IMD = 10 MHz offset from the carrier IBW = 3.84 MHz 40 30 20 10 0 −10 −20 −30 −40 −50 relative dB 1855 (1) (2) 1860 1865 1870 1875 1880 1885 1890 1895 1900 1905 f (MHz) 019aaa395 (1) IMD uncorrected: 31.3 dBc (lower), 33.3 dBc (upper). (2) IMD corrected: 52.9 dBc (lower), 53.5 dBc (upper). Fig 15. DPD measurement, fc = 1.88 GHz 4.2 DPD measurements with 2-carrier LTE The DPD measurements were performed using a Texas Instruments DPD system under the following conditions: • 2-carrier LTE signal, spacing: 10 MHz, peak-to-average ratio (PAR) = 7.6 dB at 0.01 % probability (total signal) • Channel bandwidth = 10 MHz • ACPR: 7.5 MHz offset from the carrier (IBW = 3.84 MHz) AN10951 Application note All information provided in this document is subject to legal disclaimers. Rev. 1 — 10 December 2010 © NXP B.V. 10 December 2010. All rights reserved. 10 of 19 AN10951 NXP Semiconductors 1805 MHz to 1880 MHz asymmetrical Doherty amplifier • VDS = 28 V, IDq (main amplifier) = 500 mA, VGS (peak amplifier) = 0.4 V 1 probability (%) 10−1 10−2 10−3 10−4 10−5 10−6 0 dB 10 dB 20 dB PAR (dB) 019aaa396 Test signal: 2-carrier W-CDMA, 10 MHz spacing; PAR = 7.6 dB at 0.01% probability. Fig 16. Test signal CCDF 4.2.1 1.805 GHz DPD correction The following DPD measurements were performed under the following conditions: • • • • fc = 1.805 GHz PL = 46.8 dBm Channel bandwidth = 10 MHz ACPR: 7.5 MHz offset from the carrier (IBW = 3.84 MHz) 40 ACPR 30 (dBc) 20 10 0 −10 −20 −30 −40 −50 1780 (1) (2) 1785 1790 1795 1800 1805 1810 1815 1820 1825 1830 f (MHz) 019aaa397 (1) IMD uncorrected: 25.8 dBc (lower), 25.7 dBc (upper). (2) IMD corrected: 51.9 dBc (lower), 52.2 dBc (upper). Fig 17. DPD measurement, fc = 1.805 GHz 4.2.2 1.8425 GHz DPD correction The following DPD measurements were performed under the following conditions: • • • • AN10951 Application note fc = 1.8425 GHz PL = 46.8 dBm Channel bandwidth = 10 MHz ACPR: 7.5 MHz offset from the carrier (IBW = 3.84 MHz) All information provided in this document is subject to legal disclaimers. Rev. 1 — 10 December 2010 © NXP B.V. 10 December 2010. All rights reserved. 11 of 19 AN10951 NXP Semiconductors 1805 MHz to 1880 MHz asymmetrical Doherty amplifier 40 ACPR 30 (dBc) 20 10 0 −10 −20 −30 −40 −50 (1) (2) 1812.5 1817.5 1822.5 1827.5 1832.5 1837.5 1842.5 1847.5 1852.5 1857.5 1862.5 1867.5 1872.5 f (MHz) 019aaa398 (1) IMD uncorrected: 28.1 dBc (lower), 29.7 dBc (upper). (2) IMD corrected: 54.2 dBc (lower), 55 dBc (upper). Fig 18. DPD measurement, fc = 1.8425 GHz 4.2.3 1.88 GHz DPD correction The following DPD measurements were performed under the following conditions: • • • • fc = 1.88 GHz PL = 46.8 dBm Channel bandwidth = 10 MHz ACPR: 7.5 MHz offset from the carrier (IBW = 3.84 MHz) 40 ACPR 30 (dBc) 20 10 0 −10 −20 −30 −40 −50 1855 (1) (2) 1860 1865 1870 1875 1880 1885 1890 1895 1900 1905 f (MHz) 019aaa399 (1) IMD uncorrected: 32.1 dBc (lower), 33.7 dBc (upper). (2) IMD corrected: 52.1 dBc (lower), 52.6 dBc (upper). Fig 19. DPD measurement, fc = 1.88 GHz AN10951 Application note All information provided in this document is subject to legal disclaimers. Rev. 1 — 10 December 2010 © NXP B.V. 10 December 2010. All rights reserved. 12 of 19 AN10951 NXP Semiconductors 1805 MHz to 1880 MHz asymmetrical Doherty amplifier 4.3 DPD measurements with 6-carrier GMSK The DPD measurements were performed using an Optichron OP6180 DPD system under the following conditions: • 6-carrier GMSK signal, spacing: 6 MHz, peak-to-average ratio (PAR) = 6.2 dB at 0.01 % probability (total signal) • fc = 1.8425 GHz • PL = 47.2 dBm 019aaa798 Lower: 28.6 dBc. Upper: 31.5 dBc. Fig 20. 6-carrier GMSK DPD measurement, without DPD AN10951 Application note All information provided in this document is subject to legal disclaimers. Rev. 1 — 10 December 2010 © NXP B.V. 10 December 2010. All rights reserved. 13 of 19 AN10951 NXP Semiconductors 1805 MHz to 1880 MHz asymmetrical Doherty amplifier 019aaa799 Lower: 63.1 dBc. Upper: 62.3 dBc. Fig 21. 6-carrier GMSK DPD measurement, with DPD AN10951 Application note All information provided in this document is subject to legal disclaimers. Rev. 1 — 10 December 2010 © NXP B.V. 10 December 2010. All rights reserved. 14 of 19 AN10951 NXP Semiconductors 1805 MHz to 1880 MHz asymmetrical Doherty amplifier 5. BLF7G20LS-90P and BLF7G21LS-160P asymmetrical Doherty amplifier board Q1 R1 R12 C2 R2 R3 R7 C1 L1 C5 R13 R14 R5 L3 C20 R11 R10 R4 D1 R6 R8 Q2 C4 L2 R9 C7 C10 C11 C12 C13 C3 C19 C8 C6 C18 C9 C14 C15 C16 C17 X1 90P/160P Asym Doherty Output Rev 1 20 Ro4350 R150 C115 C117 C114 C116 C106 R106 R108 D101 R104 90P/160P Asym Doherty C103 Input Rev 1 R109 20Ro4350 C111 C113 C118 C110 C112 C107 L02 C120 Q102 R111 R105 R113 R102 R103 R107 C101 R101 L101 C105 R112 C102 Q101 R110 C104 R114 L103 019aaa472 Fig 22. BLF7G20LS-90P and BLF7G21LS-160P asymmetrical Doherty amplifier board component layout AN10951 Application note All information provided in this document is subject to legal disclaimers. Rev. 1 — 10 December 2010 © NXP B.V. 10 December 2010. All rights reserved. 15 of 19 AN10951 NXP Semiconductors 1805 MHz to 1880 MHz asymmetrical Doherty amplifier 5.1 BLF7G20LS-90P and BLF7G21LS-160P asymmetrical Doherty amplifier board components Table 1. BLF7G20LS-90P and BLF7G21LS-160P asymmetrical Doherty amplifier board components Designator Description Input PCB Rogers 4350; r = 3.5; thickness 0.51 mm (0.020”) Output PCB Part identifier C1, C2, C4, 100 nF ceramic 0805 capacitor C101, C102, C104 Manufacturer Ohio circuits S0805W104K1HRN-P4 Multicomp GRM31CR72A105KA0 MuRata C6, C7, C12, 30 pF ceramic chip capacitor C16, C18, C106, C107, C112, C116, C118 100B American Technical Ceramics C8, C9 0.9 pF capacitor 100B American Technical Ceramics C11, C15, C111, C115 100 nF capacitor GRM31CR72E104KW03L MuRata C13, C17, C113, C117 10 F capacitor 100B MuRata C19 1.1 pF capacitor 100B MuRata C20, C120 220 F, 50 V electrolytic SMT capacitor PCE3474CT-ND Panasonic C110 1.7 pF capacitor 100B American Technical Ceramics C114 1.6 pF capacitor 100B American Technical Ceramics L1, L3, L101, Ferroxcube bead L103 2743019447 Fair Rite L2, L102 10 nH inductor 0603CS-10NXJB Coilcraft Q1, Q101 78L08 voltage regulator NJM#78L08UA-ND NJR Q2, Q102 2N2222 NPN transistor MMBT2222 Fairchild R1, R14, R101, R114 9.1 resistor CRCW08059R09FKEA Vishay Dale R2, R3, 430 resistor R102, R103, R106 CRCW0805432RFKEA Vishay Dale C3, C5, C10, C14, C103, C105 1 F ceramic capacitor R4 75 resistor CRCW080575R0FKEA Vishay Dale R104 0 resistor CRCW08050R0FKEA Vishay Dale R5, R105 200 potentiometer 3214W-1-201E Bourns R6 2 k resistor CRCW08052K00FKTA Vishay Dale R7, R107 1.1 k resistor CRCW08051K10FKEA Vishay Dale R8, R108 11 k resistor CRCW080511K0FKEA Vishay Dale R9, R109 5.1 resistor CRCW08055R11FKEA Vishay Dale R10, R110 5.1 k resistor CRCW08055K10FKTA Vishay Dale R11, R111 910 resistor CRCW0805909RFKTA Vishay Dale AN10951 Application note All information provided in this document is subject to legal disclaimers. Rev. 1 — 10 December 2010 © NXP B.V. 10 December 2010. All rights reserved. 16 of 19 AN10951 NXP Semiconductors 1805 MHz to 1880 MHz asymmetrical Doherty amplifier Table 1. BLF7G20LS-90P and BLF7G21LS-160P asymmetrical Doherty amplifier board components …continued Designator Description Part identifier Manufacturer R12, R112 1.1 k resistor CRCW08051K10FKEA Vishay Dale R13, R113 499 /0.5 W resistor CRCW2010499RFKEF Vishay Dale R150 EMC SMT 2010 50 load - EMC X1 5 dB hybrid coupler X3C19P1-05S Anaren 6. Abbreviations Table 2. AN10951 Application note Abbreviations Acronym Description ACPR Adjacent Channel Power Ratio CCDF Complementary Cumulative Distribution Function DPD Digital PreDistortion GSM Global System for Mobile communications GMSK Gaussian Minimum Shift Keying IBW Integration BandWidth IMD InterModulation Distortion LDMOS Laterally Diffused Metal-Oxide Semiconductor LTE Long-Term Evolution MOSFET Metal-Oxide Silicon Field-Effect Transistor PAR Peak-to-Average power Ratio PCB Printed-Circuit Board W-CDMA Wideband Code Division Multiple Access All information provided in this document is subject to legal disclaimers. Rev. 1 — 10 December 2010 © NXP B.V. 10 December 2010. All rights reserved. 17 of 19 AN10951 NXP Semiconductors 1805 MHz to 1880 MHz asymmetrical Doherty amplifier 7. Legal information 7.1 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. 7.2 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product AN10951 Application note design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Evaluation products — This product is provided on an “as is” and “with all faults” basis for evaluation purposes only. NXP Semiconductors, its affiliates and their suppliers expressly disclaim all warranties, whether express, implied or statutory, including but not limited to the implied warranties of non-infringement, merchantability and fitness for a particular purpose. The entire risk as to the quality, or arising out of the use or performance, of this product remains with customer. In no event shall NXP Semiconductors, its affiliates or their suppliers be liable to customer for any special, indirect, consequential, punitive or incidental damages (including without limitation damages for loss of business, business interruption, loss of use, loss of data or information, and the like) arising out the use of or inability to use the product, whether or not based on tort (including negligence), strict liability, breach of contract, breach of warranty or any other theory, even if advised of the possibility of such damages. Notwithstanding any damages that customer might incur for any reason whatsoever (including without limitation, all damages referenced above and all direct or general damages), the entire liability of NXP Semiconductors, its affiliates and their suppliers and customer’s exclusive remedy for all of the foregoing shall be limited to actual damages incurred by customer based on reasonable reliance up to the greater of the amount actually paid by customer for the product or five dollars (US$5.00). The foregoing limitations, exclusions and disclaimers shall apply to the maximum extent permitted by applicable law, even if any remedy fails of its essential purpose. 7.3 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. All information provided in this document is subject to legal disclaimers. Rev. 1 — 10 December 2010 © NXP B.V. 10 December 2010. All rights reserved. 18 of 19 AN10951 NXP Semiconductors 1805 MHz to 1880 MHz asymmetrical Doherty amplifier 8. Contents 1 2 3 3.1 3.2 3.3 3.4 4 4.1 4.1.1 4.1.2 4.1.3 4.2 4.2.1 4.2.2 4.2.3 4.3 5 5.1 6 7 7.1 7.2 7.3 8 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Test summary. . . . . . . . . . . . . . . . . . . . . . . . . . . 3 RF Performance . . . . . . . . . . . . . . . . . . . . . . . . . 4 Network analyzer measurements . . . . . . . . . . . 4 Peak output power measurements . . . . . . . . . . 5 IS-95 measurements . . . . . . . . . . . . . . . . . . . . 6 6-Carrier GSM measurements . . . . . . . . . . . . . 7 DPD Measurements . . . . . . . . . . . . . . . . . . . . . . 8 DPD measurements with 2-carrier W-CDMA . . 8 1.805 GHz DPD correction . . . . . . . . . . . . . . . . 9 1.8425 GHz DPD correction . . . . . . . . . . . . . . . 9 1.88 GHz DPD correction . . . . . . . . . . . . . . . . 10 DPD measurements with 2-carrier LTE . . . . . 10 1.805 GHz DPD correction . . . . . . . . . . . . . . . 11 1.8425 GHz DPD correction . . . . . . . . . . . . . . 11 1.88 GHz DPD correction . . . . . . . . . . . . . . . . 12 DPD measurements with 6-carrier GMSK . . . 13 BLF7G20LS-90P and BLF7G21LS-160P asymmetrical Doherty amplifier board . . . . . 15 BLF7G20LS-90P and BLF7G21LS-160P asymmetrical Doherty amplifier board components . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Legal information. . . . . . . . . . . . . . . . . . . . . . . 18 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 10 December 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 10 December 2010 Document identifier: AN10951