AN10951 1805 MHz to 1880 MHz asymmetrical Doherty

AN10951
1805 MHz to 1880 MHz asymmetrical Doherty amplifier with
the BLF7G20LS-90P and BLF7G21LS-160P
Rev. 1 — 10 December 2010
Application note
Document information
Info
Content
Keywords
Doherty architecture, Digital PreDistortion (DPD), IS-95, multi-carrier
GSM, W-CDMA, pulse, BLF7G20LS-90P, BLF7G21LS-160P
Abstract
This application note describes the design and performance of an
asymmetrical Doherty amplifier in the 1805 MHz to 1880 MHz band using
the BLF7G20LS-90P and the BLF7G21LS-160P LDMOS transistors.
AN10951
NXP Semiconductors
1805 MHz to 1880 MHz asymmetrical Doherty amplifier
Revision history
Rev
Date
Description
1
20101210
Initial version
Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
AN10951
Application note
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 10 December 2010
© NXP B.V. 10 December 2010. All rights reserved.
2 of 19
AN10951
NXP Semiconductors
1805 MHz to 1880 MHz asymmetrical Doherty amplifier
1. Introduction
This application note describes the design and performance of an asymmetrical Doherty
amplifier in the 1805 MHz to 1880 MHz band using the BLF7G20LS-90P and the
BLF7G21LS-160P LDMOS transistors.
The asymmetrical Doherty amplifier design uses NXP Semiconductors’ seventh
generation push-pull LDMOS transistors BLF7G20LS-90P and BLF7G21LS-160P on a
0.51 mm (0.020") thick Rogers 4350, Printed-Circuit Board (PCB). The BLF7G20LS-90P
is rated at 90 W and operates as the main amplifier for the carrier signal. The
BLF7G21LS-160P is rated at 160 W and operates as the amplifier for peak signals. Both
devices are internally matched at the input and output.
019aaa400
Fig 1.
The assembled asymmetrical Doherty amplifier
2. Test summary
Amplifier under test: board number: 1339; date code m1001/D101504; Rogers 4350 PCB,
thickness of 0.51 mm (0.020”).
The amplifier was characterized under the following conditions:
• Frequency band: 1805 MHz to 1880 MHz
• Network analyzer measurements for gain (Gp), delay (td) and Input Return Loss (IRL)
at:
– output power (PL) = 46 dBm
– drain-source voltage (VDS) = 28 V
– quiescent drain current (IDq) (main amplifier) = 350 mA
– gate-source voltage (VGS) (peak amplifier) = 0.3 V
• Peak output power measurement:
– using the standard CDMA IS-95 signal, the peak-to-average ratio (PAR) = 9.7 dB
at 0.01 % probability on the CCDF to determine output power (PL)
where the PAR reaches a value of 6.7 dB at 0.01 % probability on the CCDF. This
is called the 3 dB compression point. VDS = 28 V, IDq (main amplifier) = 350 mA
and VGS (peak amplifier) = 0.3 V
AN10951
Application note
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Rev. 1 — 10 December 2010
© NXP B.V. 10 December 2010. All rights reserved.
3 of 19
AN10951
NXP Semiconductors
1805 MHz to 1880 MHz asymmetrical Doherty amplifier
– using a pulsed signal and measuring the 1 dB and 3 dB compression points with a
pulse width of 12 s at 10 % duty cycle: VDS = 28 V, IDq (main amplifier) = 350 mA
and VGS (peak amplifier) = 0.3 V
• IS-95 measurement at VDS = 28 V, IDq (main amplifier) = 350 mA and VGS = 0.3 V
• 6-carrier GSM measurements using a 6-carrier GSM signal with a 4 MHz spacing,
PAR = 7.5 dB at 0.01 % probability: VDS = 28 V, IDq (main amplifier) = 350 mA and
VGS (peak amplifier) = 0.3 V
• Digital PreDistortion (DPD) measurements using a DPD system:
– 2-carrier W-CDMA signal, 10 MHz spacing, peak-to-average ratio (PAR) = 7.6 dB
at 0.01 % probability (total signal), VDS = 28 V, IDq (main amplifier) = 350 mA and
VGS (peak amplifier) = 0.3 V
– 2-carrier LTE signal, 10 MHz spacing, 10 MHz carrier bandwidth, peak-to-average
ratio (PAR) = 7.6 dB at 0.01 % probability (total signal), VDS = 28 V, IDq (main
amplifier) = 350 mA, VGS (peak amplifier) = 0.3 V
3. RF Performance
3.1 Network analyzer measurements
Network analyzer measurements were performed under the following conditions:
•
•
•
•
PL = 46 dBm
VDS = 28 V
IDq (main amplifier) = 350 mA
VGS (peak amplifier) = 0.3 V
019aaa382
17.5
6
IRL
(dB)
Gp
(dB)
16.5
019aaa383
4.5
IRL
(dB)
2
3.5
−2
2.5
−6
1.5
−10
0.5
2
(1)
(1)
15.5
14.5
(2)
13.5
12.5
1.74
1.78
1.82
1.86
−14
1.90
1.94
f (GHz)
−2
(2)
−0.5
1.74
(1) Gp.
(1) td.
(2) IRL.
Power gain and input return loss as a function
of frequency
AN10951
Application note
Fig 3.
−6
−10
(2) IRL.
Fig 2.
6
td
(ns)
1.78
1.82
1.86
−14
1.90
1.94
f (GHz)
Delay time and input return loss as a function
of frequency
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Rev. 1 — 10 December 2010
© NXP B.V. 10 December 2010. All rights reserved.
4 of 19
AN10951
NXP Semiconductors
1805 MHz to 1880 MHz asymmetrical Doherty amplifier
3.2 Peak output power measurements
Two methods were used to measure peak output power.
• Using a standard IS-95 signal (PAR = 9.7 dB at 0.01 % probability on the CCDF), to
determine the output power when PAR reaches 6.7 dB at 0.01 % probability on the
CCDF, measured as the 3 dB compression point
• Using the pulsed signal (12 s width and 10 % duty cycle), measuring the 1 dB and
3 dB compression points
The peak output power measurements were performed under the following conditions:
• Bias: VDS = 28 V
• IDq (main amplifier) = 350 mA
• VGS (peak amplifier) = 0.3 V
019aaa384
55.4
PL(M)
(dBm)
019aaa385
17
Gp
(dB)
55.2
16
55.0
15
54.8
14
54.6
13
54.4
1800
(1)
(2)
(3)
12
1820
1840
1860
1880
35
40
f (MHz)
45
50
55
PL(M) (dBm)
(1) f = 1805 MHz.
(2) f = 1842.5 MHz.
(3) f = 1880 MHz.
Fig 4.
Peak output power as a function of frequency
AN10951
Application note
Fig 5.
Power gain as a function of peak output power
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Rev. 1 — 10 December 2010
© NXP B.V. 10 December 2010. All rights reserved.
5 of 19
AN10951
NXP Semiconductors
1805 MHz to 1880 MHz asymmetrical Doherty amplifier
3.3 IS-95 measurements
The IS-95 measurements were performed under the following conditions:
• Bias: VDS = 28 V
• IDq (main amplifier) = 350 mA
• VGS (peak amplifier) = 0.3 V
Remark: When calculating the drain efficiency, the increase in current caused by the gate
temperature compensation circuit ( 50 mA) must be subtracted from the drain current
value. This is approximately 50 mA.
019aaa386
17
ηD
(%)
Gp
(dB)
55
019aaa387
10
(1)
(2)
(3)
PAR
(dB)
9
16
50
8
(1)
(2)
(3)
15
45
(4)
(5)
(6)
7
40
6
14
41
43
45
47
49
PL(AV) (dBm)
41
43
45
47
49
PL (dBm)
(1) Gp at 1805 MHz.
(1) f = 1805 MHz.
(2) Gp at 1842.5 MHz.
(2) f = 1842.5 MHz.
(3) Gp at 1880 MHz.
(3) f = 1880 MHz.
(4) D at 1805 MHz.
(5) D at 1842.5 MHz.
(6) D at 1880 MHz.
Fig 6.
Power gain and drain efficiency as a function
of average output power, IS-95
AN10951
Application note
Fig 7.
PAR as a function of output power
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Rev. 1 — 10 December 2010
© NXP B.V. 10 December 2010. All rights reserved.
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AN10951
NXP Semiconductors
1805 MHz to 1880 MHz asymmetrical Doherty amplifier
3.4 6-Carrier GSM measurements
The 6-carrier GSM measurements were performed under the following conditions:
•
•
•
•
Bias: VDS = 28 V, IDq (main amplifier) = 350 mA and VGS (peak amplifier) = 0.3 V
Test signal: 6 carrier GSM, 4 MHz spacing, PAR = 7.5 dB at 0.01% probability
IMD3: 4 MHz offset from the closest carrier
IMD5: 8 MHz offset from the closest carrier
019aaa388
18
Gp
(dB)
019aaa389
60
ηD
(%)
17
40
16
(1)
(2)
(3)
(1)
(2)
(3)
15
20
14
13
0
38
42
46
50
38
42
PL (dBm)
(1) f = 1805 MHz.
(2) f = 1842.5 MHz.
(2) f = 1842.5 MHz.
(3) f = 1880 MHz.
(3) f = 1880 MHz.
Power gain as a function of output power
AN10951
Application note
50
PL (dBm)
(1) f = 1805 MHz.
Fig 8.
46
Fig 9.
Drain efficiency as a function of output power
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Rev. 1 — 10 December 2010
© NXP B.V. 10 December 2010. All rights reserved.
7 of 19
AN10951
NXP Semiconductors
1805 MHz to 1880 MHz asymmetrical Doherty amplifier
019aaa390
−20
IMD3
(dBc)
019aaa391
−22
(1)
(2)
IMD5
(dBc)
(1)
(2)
−24
−26
(3)
(3)
(4)
(4)
−28
−30
(5)
(5)
−32
−34
(6)
(6)
−36
38
42
46
−38
50
38
42
PL (dBm)
50
PL (dBm)
(1) 1805 MHz IMD3 low.
(1) 1805 MHz IMD5 low.
(2) 1805 MHz IMD3 high.
(2) 1805 MHz IMD5 high.
(3) 1842.5 MHz IMD3 low.
(3) 1842.5 MHz IMD5 low.
(4) 1842.5 MHz IMD3 high.
(4) 1842.5 MHz IMD5 high.
(5) 1880 MHz IMD3 low.
(5) 1880 MHz IMD5 low.
(6) 1880 MHz IMD3 high.
(6) 1880 MHz IMD5 high.
Fig 10. IMD3 as a function of output power
46
Fig 11. IMD5 as a function of output power
4. DPD Measurements
4.1 DPD measurements with 2-carrier W-CDMA
The DPD measurements were performed using a Texas Instruments DPD system under
the following conditions:
• 2-carrier W-CDMA signal, spacing: 10 MHz, peak-to-average ratio (PAR) = 7.6 dB at
0.01 % probability (total signal)
•
•
•
•
AN10951
Application note
Channel bandwidth = 3.84 MHz
IMD: 10 MHz offset from the carrier (IBW = 3.84 MHz)
VDS = 28 V, IDq (main amplifier) = 350 mA, VGS (peak amplifier) = 0.3 V
IBW = 3.84 MHz
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Rev. 1 — 10 December 2010
© NXP B.V. 10 December 2010. All rights reserved.
8 of 19
AN10951
NXP Semiconductors
1805 MHz to 1880 MHz asymmetrical Doherty amplifier
1
probability
(%)
10−1
10−2
10−3
10−4
10−5
10−6
0 dB
10 dB
20 dB
PAR (dB)
019aaa392
Test signal: 2-carrier W-CDMA, 10 MHz spacing; PAR = 7.6 dB at 0.01% probability.
Fig 12. CCDF test signal
4.1.1 1.805 GHz DPD correction
The following DPD measurements were performed under the following conditions:
•
•
•
•
fc = 1.805 GHz
PL = 46.8 dBm
IMD = 10 MHz offset from the carrier
Channel bandwidth = 3.84 MHz
40
30
20
10
0
−10
−20
−30
−40
−50
relative dB
1780
(1)
(2)
1785
1790
1795
1800
1805
1810
1815
1820
1825
1830
f (MHz)
019aaa393
(1) IMD uncorrected: 25.4 dBc (lower), 24.9 dBc (upper).
(2) IMD corrected: 53.2 dBc (lower), 53.6 dBc (upper).
Fig 13. DPD measurement, fc = 1.805 GHz
4.1.2 1.8425 GHz DPD correction
The following DPD measurements were performed under the following conditions:
•
•
•
•
AN10951
Application note
fc = 1.8425 GHz
PL = 46.8 dBm
IMD = 10 MHz offset from the carrier
IBW = 3.84 MHz
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Rev. 1 — 10 December 2010
© NXP B.V. 10 December 2010. All rights reserved.
9 of 19
AN10951
NXP Semiconductors
1805 MHz to 1880 MHz asymmetrical Doherty amplifier
40
30
20
10
0
−10
−20
−30
−40
−50
relative dB
(1)
(2)
1812.5 1817.5 1822.5 1827.5 1832.5 1837.5 1842.5 1847.5 1852.5 1857.5 1862.5 1867.5 1872.5
f (MHz)
019aaa394
(1) IMD uncorrected: 27.6 dBc (lower), 29.6 dBc (upper).
(2) IMD corrected: 54.1 dBc (lower), 55.5 dBc (upper).
Fig 14. DPD measurement, fc = 1.8425 GHz
4.1.3 1.88 GHz DPD correction
The following DPD measurements were performed under the following conditions:
•
•
•
•
fc = 1.88 GHz
PL = 46.8 dBm
IMD = 10 MHz offset from the carrier
IBW = 3.84 MHz
40
30
20
10
0
−10
−20
−30
−40
−50
relative dB
1855
(1)
(2)
1860
1865
1870
1875
1880
1885
1890
1895
1900
1905
f (MHz)
019aaa395
(1) IMD uncorrected: 31.3 dBc (lower), 33.3 dBc (upper).
(2) IMD corrected: 52.9 dBc (lower), 53.5 dBc (upper).
Fig 15. DPD measurement, fc = 1.88 GHz
4.2 DPD measurements with 2-carrier LTE
The DPD measurements were performed using a Texas Instruments DPD system under
the following conditions:
• 2-carrier LTE signal, spacing: 10 MHz, peak-to-average ratio (PAR) = 7.6 dB at
0.01 % probability (total signal)
• Channel bandwidth = 10 MHz
• ACPR: 7.5 MHz offset from the carrier (IBW = 3.84 MHz)
AN10951
Application note
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Rev. 1 — 10 December 2010
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AN10951
NXP Semiconductors
1805 MHz to 1880 MHz asymmetrical Doherty amplifier
• VDS = 28 V, IDq (main amplifier) = 500 mA, VGS (peak amplifier) = 0.4 V
1
probability
(%)
10−1
10−2
10−3
10−4
10−5
10−6
0 dB
10 dB
20 dB
PAR (dB)
019aaa396
Test signal: 2-carrier W-CDMA, 10 MHz spacing; PAR = 7.6 dB at 0.01% probability.
Fig 16. Test signal CCDF
4.2.1 1.805 GHz DPD correction
The following DPD measurements were performed under the following conditions:
•
•
•
•
fc = 1.805 GHz
PL = 46.8 dBm
Channel bandwidth = 10 MHz
ACPR: 7.5 MHz offset from the carrier (IBW = 3.84 MHz)
40
ACPR
30
(dBc)
20
10
0
−10
−20
−30
−40
−50
1780
(1)
(2)
1785
1790
1795
1800
1805
1810
1815
1820
1825
1830
f (MHz)
019aaa397
(1) IMD uncorrected: 25.8 dBc (lower), 25.7 dBc (upper).
(2) IMD corrected: 51.9 dBc (lower), 52.2 dBc (upper).
Fig 17. DPD measurement, fc = 1.805 GHz
4.2.2 1.8425 GHz DPD correction
The following DPD measurements were performed under the following conditions:
•
•
•
•
AN10951
Application note
fc = 1.8425 GHz
PL = 46.8 dBm
Channel bandwidth = 10 MHz
ACPR: 7.5 MHz offset from the carrier (IBW = 3.84 MHz)
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Rev. 1 — 10 December 2010
© NXP B.V. 10 December 2010. All rights reserved.
11 of 19
AN10951
NXP Semiconductors
1805 MHz to 1880 MHz asymmetrical Doherty amplifier
40
ACPR
30
(dBc)
20
10
0
−10
−20
−30
−40
−50
(1)
(2)
1812.5 1817.5 1822.5 1827.5 1832.5 1837.5 1842.5 1847.5 1852.5 1857.5 1862.5 1867.5 1872.5
f (MHz)
019aaa398
(1) IMD uncorrected: 28.1 dBc (lower), 29.7 dBc (upper).
(2) IMD corrected: 54.2 dBc (lower), 55 dBc (upper).
Fig 18. DPD measurement, fc = 1.8425 GHz
4.2.3 1.88 GHz DPD correction
The following DPD measurements were performed under the following conditions:
•
•
•
•
fc = 1.88 GHz
PL = 46.8 dBm
Channel bandwidth = 10 MHz
ACPR: 7.5 MHz offset from the carrier (IBW = 3.84 MHz)
40
ACPR
30
(dBc)
20
10
0
−10
−20
−30
−40
−50
1855
(1)
(2)
1860
1865
1870
1875
1880
1885
1890
1895
1900
1905
f (MHz)
019aaa399
(1) IMD uncorrected: 32.1 dBc (lower), 33.7 dBc (upper).
(2) IMD corrected: 52.1 dBc (lower), 52.6 dBc (upper).
Fig 19. DPD measurement, fc = 1.88 GHz
AN10951
Application note
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Rev. 1 — 10 December 2010
© NXP B.V. 10 December 2010. All rights reserved.
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AN10951
NXP Semiconductors
1805 MHz to 1880 MHz asymmetrical Doherty amplifier
4.3 DPD measurements with 6-carrier GMSK
The DPD measurements were performed using an Optichron OP6180 DPD system under
the following conditions:
• 6-carrier GMSK signal, spacing: 6 MHz, peak-to-average ratio (PAR) = 6.2 dB at
0.01 % probability (total signal)
• fc = 1.8425 GHz
• PL = 47.2 dBm
019aaa798
Lower: 28.6 dBc.
Upper: 31.5 dBc.
Fig 20. 6-carrier GMSK DPD measurement, without DPD
AN10951
Application note
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Rev. 1 — 10 December 2010
© NXP B.V. 10 December 2010. All rights reserved.
13 of 19
AN10951
NXP Semiconductors
1805 MHz to 1880 MHz asymmetrical Doherty amplifier
019aaa799
Lower: 63.1 dBc.
Upper: 62.3 dBc.
Fig 21. 6-carrier GMSK DPD measurement, with DPD
AN10951
Application note
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Rev. 1 — 10 December 2010
© NXP B.V. 10 December 2010. All rights reserved.
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AN10951
NXP Semiconductors
1805 MHz to 1880 MHz asymmetrical Doherty amplifier
5. BLF7G20LS-90P and BLF7G21LS-160P asymmetrical Doherty amplifier
board
Q1 R1
R12
C2
R2
R3
R7
C1
L1
C5
R13
R14
R5
L3
C20
R11
R10
R4
D1
R6
R8
Q2
C4
L2
R9
C7
C10 C11 C12 C13
C3
C19
C8
C6
C18
C9
C14 C15 C16 C17
X1
90P/160P
Asym Doherty
Output Rev 1
20 Ro4350
R150
C115 C117
C114 C116
C106
R106
R108
D101
R104
90P/160P
Asym Doherty C103
Input Rev 1
R109
20Ro4350
C111 C113 C118
C110 C112
C107
L02
C120
Q102
R111
R105
R113
R102 R103 R107 C101
R101
L101
C105
R112 C102 Q101
R110
C104
R114
L103
019aaa472
Fig 22. BLF7G20LS-90P and BLF7G21LS-160P asymmetrical Doherty amplifier board
component layout
AN10951
Application note
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Rev. 1 — 10 December 2010
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15 of 19
AN10951
NXP Semiconductors
1805 MHz to 1880 MHz asymmetrical Doherty amplifier
5.1 BLF7G20LS-90P and BLF7G21LS-160P asymmetrical Doherty
amplifier board components
Table 1.
BLF7G20LS-90P and BLF7G21LS-160P asymmetrical Doherty amplifier board components
Designator
Description
Input PCB
Rogers 4350; r = 3.5; thickness 0.51 mm (0.020”)
Output PCB
Part identifier
C1, C2, C4, 100 nF ceramic 0805 capacitor
C101, C102,
C104
Manufacturer
Ohio circuits
S0805W104K1HRN-P4
Multicomp
GRM31CR72A105KA0
MuRata
C6, C7, C12, 30 pF ceramic chip capacitor
C16, C18,
C106, C107,
C112, C116,
C118
100B
American Technical Ceramics
C8, C9
0.9 pF capacitor
100B
American Technical Ceramics
C11, C15,
C111, C115
100 nF capacitor
GRM31CR72E104KW03L
MuRata
C13, C17,
C113, C117
10 F capacitor
100B
MuRata
C19
1.1 pF capacitor
100B
MuRata
C20, C120
220 F, 50 V electrolytic SMT
capacitor
PCE3474CT-ND
Panasonic
C110
1.7 pF capacitor
100B
American Technical Ceramics
C114
1.6 pF capacitor
100B
American Technical Ceramics
L1, L3, L101, Ferroxcube bead
L103
2743019447
Fair Rite
L2, L102
10 nH inductor
0603CS-10NXJB
Coilcraft
Q1, Q101
78L08 voltage regulator
NJM#78L08UA-ND
NJR
Q2, Q102
2N2222 NPN transistor
MMBT2222
Fairchild
R1, R14,
R101, R114
9.1  resistor
CRCW08059R09FKEA
Vishay Dale
R2, R3,
430  resistor
R102, R103,
R106
CRCW0805432RFKEA
Vishay Dale
C3, C5,
C10, C14,
C103, C105
1 F ceramic capacitor
R4
75  resistor
CRCW080575R0FKEA
Vishay Dale
R104
0  resistor
CRCW08050R0FKEA
Vishay Dale
R5, R105
200  potentiometer
3214W-1-201E
Bourns
R6
2 k resistor
CRCW08052K00FKTA
Vishay Dale
R7, R107
1.1 k resistor
CRCW08051K10FKEA
Vishay Dale
R8, R108
11 k resistor
CRCW080511K0FKEA
Vishay Dale
R9, R109
5.1  resistor
CRCW08055R11FKEA
Vishay Dale
R10, R110
5.1 k resistor
CRCW08055K10FKTA
Vishay Dale
R11, R111
910  resistor
CRCW0805909RFKTA
Vishay Dale
AN10951
Application note
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Rev. 1 — 10 December 2010
© NXP B.V. 10 December 2010. All rights reserved.
16 of 19
AN10951
NXP Semiconductors
1805 MHz to 1880 MHz asymmetrical Doherty amplifier
Table 1.
BLF7G20LS-90P and BLF7G21LS-160P asymmetrical Doherty amplifier board components …continued
Designator
Description
Part identifier
Manufacturer
R12, R112
1.1 k resistor
CRCW08051K10FKEA
Vishay Dale
R13, R113
499 /0.5 W resistor
CRCW2010499RFKEF
Vishay Dale
R150
EMC SMT 2010 50  load
-
EMC
X1
5 dB hybrid coupler
X3C19P1-05S
Anaren
6. Abbreviations
Table 2.
AN10951
Application note
Abbreviations
Acronym
Description
ACPR
Adjacent Channel Power Ratio
CCDF
Complementary Cumulative Distribution Function
DPD
Digital PreDistortion
GSM
Global System for Mobile communications
GMSK
Gaussian Minimum Shift Keying
IBW
Integration BandWidth
IMD
InterModulation Distortion
LDMOS
Laterally Diffused Metal-Oxide Semiconductor
LTE
Long-Term Evolution
MOSFET
Metal-Oxide Silicon Field-Effect Transistor
PAR
Peak-to-Average power Ratio
PCB
Printed-Circuit Board
W-CDMA
Wideband Code Division Multiple Access
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 10 December 2010
© NXP B.V. 10 December 2010. All rights reserved.
17 of 19
AN10951
NXP Semiconductors
1805 MHz to 1880 MHz asymmetrical Doherty amplifier
7. Legal information
7.1
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
7.2
Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
AN10951
Application note
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Evaluation products — This product is provided on an “as is” and “with all
faults” basis for evaluation purposes only. NXP Semiconductors, its affiliates
and their suppliers expressly disclaim all warranties, whether express, implied
or statutory, including but not limited to the implied warranties of
non-infringement, merchantability and fitness for a particular purpose. The
entire risk as to the quality, or arising out of the use or performance, of this
product remains with customer.
In no event shall NXP Semiconductors, its affiliates or their suppliers be liable
to customer for any special, indirect, consequential, punitive or incidental
damages (including without limitation damages for loss of business, business
interruption, loss of use, loss of data or information, and the like) arising out
the use of or inability to use the product, whether or not based on tort
(including negligence), strict liability, breach of contract, breach of warranty or
any other theory, even if advised of the possibility of such damages.
Notwithstanding any damages that customer might incur for any reason
whatsoever (including without limitation, all damages referenced above and
all direct or general damages), the entire liability of NXP Semiconductors, its
affiliates and their suppliers and customer’s exclusive remedy for all of the
foregoing shall be limited to actual damages incurred by customer based on
reasonable reliance up to the greater of the amount actually paid by customer
for the product or five dollars (US$5.00). The foregoing limitations, exclusions
and disclaimers shall apply to the maximum extent permitted by applicable
law, even if any remedy fails of its essential purpose.
7.3
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 10 December 2010
© NXP B.V. 10 December 2010. All rights reserved.
18 of 19
AN10951
NXP Semiconductors
1805 MHz to 1880 MHz asymmetrical Doherty amplifier
8. Contents
1
2
3
3.1
3.2
3.3
3.4
4
4.1
4.1.1
4.1.2
4.1.3
4.2
4.2.1
4.2.2
4.2.3
4.3
5
5.1
6
7
7.1
7.2
7.3
8
Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Test summary. . . . . . . . . . . . . . . . . . . . . . . . . . . 3
RF Performance . . . . . . . . . . . . . . . . . . . . . . . . . 4
Network analyzer measurements . . . . . . . . . . . 4
Peak output power measurements . . . . . . . . . . 5
IS-95 measurements . . . . . . . . . . . . . . . . . . . . 6
6-Carrier GSM measurements . . . . . . . . . . . . . 7
DPD Measurements . . . . . . . . . . . . . . . . . . . . . . 8
DPD measurements with 2-carrier W-CDMA . . 8
1.805 GHz DPD correction . . . . . . . . . . . . . . . . 9
1.8425 GHz DPD correction . . . . . . . . . . . . . . . 9
1.88 GHz DPD correction . . . . . . . . . . . . . . . . 10
DPD measurements with 2-carrier LTE . . . . . 10
1.805 GHz DPD correction . . . . . . . . . . . . . . . 11
1.8425 GHz DPD correction . . . . . . . . . . . . . . 11
1.88 GHz DPD correction . . . . . . . . . . . . . . . . 12
DPD measurements with 6-carrier GMSK . . . 13
BLF7G20LS-90P and BLF7G21LS-160P
asymmetrical Doherty amplifier board . . . . . 15
BLF7G20LS-90P and BLF7G21LS-160P
asymmetrical Doherty amplifier board
components . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Legal information. . . . . . . . . . . . . . . . . . . . . . . 18
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 10 December 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 10 December 2010
Document identifier: AN10951