AN10945 174 MHz to 230 MHz DVB-T power amplifier

AN10945
174 MHz to 230 MHz DVB-T power amplifier with the BLF881
Rev. 01 — 18 November 2010
Application note
Document information
Info
Content
Keywords
BLF881, DVB-T, VHF, ACPR, LDMOS, power amplifier, linearity,
efficiency, gain flatness, peak power
Abstract
This application note describes the design and performance of a 50 W
DVB-T power amplifier for the 174 MHz to 230 MHz VHF band using the
BLF881 power transistor. In particular, it compares the DVB-T
performance for flat gain with best ACPR tuning.
AN10945
NXP Semiconductors
174 MHz to 230 MHz DVB-T power amplifier with the BLF881
Revision history
Rev
Date
Description
1
20101118
Initial version
Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
AN10945
Application note
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AN10945
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174 MHz to 230 MHz DVB-T power amplifier with the BLF881
1. Introduction
The BLF881 is a 50 V high power RF transistor based on NXP Semiconductor’s high
voltage LDMOS process. It is designed for use in the 470 MHz to 860 MHz UHF
broadcast band, where it can deliver 140 W (peak sync) for analog TV and 33 W for
DVB-T (8K).
When using the BLF881 in the VHF band, special attention is needed to achieve a
broadband input match due to the high Q (6 at 174 MHz) at these lower input frequencies.
With care, an input return loss better than 6 dB can be achieved across the 28 %
fractional bandwidth.
Another issue at VHF frequencies is that the load pull contours for power, gain and
efficiency are all relatively steep and distinct from each other, so the designer has to make
significant trade-offs between linearity, efficiency and gain flatness for a broadband output
network.
In this design, we compare two differently tuned outputs:
• Flat gain: where gain flatness is optimized over the band while balancing peak power
at the band top and bottom, but sacrificing efficiency.
• Best ACPR: where ACPR and efficiency are optimized over the band, while balancing
efficiency at the band top and bottom, but sacrificing gain flatness.
019aaa401
Output tuned for best ACPR.
Fig 1.
The assembled DVB-T BLF881 amplifier
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174 MHz to 230 MHz DVB-T power amplifier with the BLF881
2. Test summary
The amplifier was characterized under the conditions shown in Table 1.
Table 1.
RF performance summary
Characteristic
AN10945
Application note
Output tuned for
Flat gain
Best ACPR
Frequency range
174 MHz to 230 MHz
174 MHz to 230 MHz
Drain-Source voltage (VDS)
50 V
50 V
Quiescent drain current (IDq)
0.5 A
0.5 A
Minimum input return loss
6 dB
6 dB
Peak DVB-T power
no CCDF data
55.2 dBm to 55.4 dBm
Peak pulse power at 202 MHz
53.4 dBm
52.4 dBm
ACPR at PL = 40 W
−24 dB to −34 dB
−30 dB to −32 dB
DVB-T drain efficiency (ηD) at
PL = 40 W
23 % to 29 %
30 % to 37 %
Peak pulse efficiency at
202 MHz
50 %
63 %
Minimum gain at PL = 40 W
30.5 dB
28.1 dB
Gain flatness
1.4 dB
5.9 dB
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AN10945
NXP Semiconductors
174 MHz to 230 MHz DVB-T power amplifier with the BLF881
3. Design methodology
Initial input tuning was determined with an Agilent Advanced Design System (ADS) using
the equivalent input circuit provided for UHF applications. When the amplifier did not tune
as predicted by this model, it was found that the equivalent circuit was not accurate at
lower frequencies. To more accurately model the device input impedance, ADS was used
to measure the input impedance of the non-linear BLF881 model in a large-signal
harmonic balance simulation. This modelled impedance data was then used to more
accurately model the tuning of the amplifier’s input network. The modelled input
impedance data is shown in Table 2.
Table 2.
Modelled input impedance (Zi)
Pi = 10 dBm, ZL = 4 + j0 Ω, VDS = 50 V, IDq = 0.5 A.
Frequency
Zi
170 MHz
1.2 − j7.2 Ω
200 MHz
1.2 − j6.1 Ω
230 MHz
1.2 − j5.3 Ω
The optimal load impedance was determined by a load pull analysis using ADS. The
compromise load points were chosen to favour peak power, followed by efficiency, while
ignoring gain flatness. A load impedance of 4 + j0 Ω across the band met these criteria.
The tuning of the output was then determined for this 4 Ω load impedance using a linear
small-signal analysis. The 56 pF capacitors used to short-circuit the second harmonic
were also determined using this analysis.
The resulting output network needed only minor tuning to deliver the best ACPR results as
shown in this application note. The flat gain tuned output was determined by iterative
tuning after examination of the load pull data to see which way the load impedance had to
move across the band.
AN10945
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AN10945
NXP Semiconductors
174 MHz to 230 MHz DVB-T power amplifier with the BLF881
4. RF performance
4.1 Best ACPR tuning
019aaa402
35
G
(dB)
33
0
shoulder
distance
(dB)
−10
(1)
−20
31
(2)
29
−30
(3)
−40
27
25
170
190
−50
230
210
f (MHz)
VDS = 50 V; IDq = 0.5 A; DVB-T = 8K (OFDM); ACPR measured within 30 kHz bandwidth at
fc = ± 4.3 MHz.
(1) Gain.
(2) Lower adjacent.
(3) Upper adjacent.
Fig 2.
AN10945
Application note
DVB-T gain and ACPR at PL = 40 W
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AN10945
NXP Semiconductors
174 MHz to 230 MHz DVB-T power amplifier with the BLF881
019aaa403
0
shoulder
distance
(dB)
−10
50
ηD
(%)
(1)
(2)
(3)
40
−20
30
−30
20
−40
−50
10
(4)
(5)
(6)
0
0
20
40
60
80
PL (W)
VDS = 50 V; IDq = 0.5 A; DVB-T = 8K (OFDM); ACPR measured within 30 kHz bandwidth at
fc = ± 4.3 MHz.
(1) ηD = 202 MHz.
(2) ηD = 174 MHz.
(3) ηD = 230 MHz.
(4) ACPR = 174 MHz.
(5) ACPR = 202 MHz.
(6) ACPR = 230 MHz.
Fig 3.
DVB-T ACPR and drain efficiency
019aaa404
35
G
(dB)
40
ηD
(dB)
(1)
33
36
(2)
31
32
29
28
27
24
25
170
190
20
230
210
f (MHz)
VDS = 50 V; IDq = 0.5 A; DVB-T = 8K (OFDM).
(1) Gain.
(2) Drain efficiency.
Fig 4.
AN10945
Application note
DVB-T gain and drain efficiency at PL = 40 W
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AN10945
NXP Semiconductors
174 MHz to 230 MHz DVB-T power amplifier with the BLF881
019aaa405
9
PAR
(dB)
50
ηD
(%)
(1)
8
40
(2)
7
30
6
170
190
20
230
210
f (MHz)
VDS = 50 V; IDq = 0.5 A; DVB-T = 8K (OFDM); PAR at 0.01 % probability on the CCDF.
(1) PAR.
(2) Drain efficiency.
Fig 5.
DVB-T PAR and drain efficiency at PL = 50 W
019aaa406
34
80
ηD
(%)
G
(dB)
32
60
(1)
30
40
28
20
(2)
26
0
34
38
42
46
50
54
PL (dBm)
VDS = 50 V; IDq = 0.5 A; tp = 12 μs.
(1) Gain.
(2) Drain efficiency.
Fig 6.
AN10945
Application note
Pulse gain and drain efficiency at 202 MHz
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AN10945
NXP Semiconductors
174 MHz to 230 MHz DVB-T power amplifier with the BLF881
019aaa407
0
IRL
(dB)
−4
−8
−12
−16
−20
100
140
180
220
260
300
f (MHz)
VDS = 50 V; IDq = 0.5 A; Pi = 10 dBm.
Fig 7.
Input return loss
4.2 Flat gain tuning
019aaa408
35
G
(dB)
40
PAE
(%)
33
36
(1)
31
32
29
28
(2)
27
25
170
24
190
20
230
210
f (MHz)
VDS = 50 V; IDq = 0.5 A; DVB-T = 8K (OFDM).
(1) Gain.
(2) PAE.
Fig 8.
AN10945
Application note
DVB-T gain and power added efficiency at PL = 40 W
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AN10945
NXP Semiconductors
174 MHz to 230 MHz DVB-T power amplifier with the BLF881
019aaa409
0
shoulder
distance
(dB)
−10
50
PAE
(%)
40
−20
(1)
−30
(2)
30
20
(3)
−40
−50
10
0
0
20
40
60
80
PL (W)
VDS = 50 V; IDq = 0.5 A; DVB-T = 8K (OFDM); ACPR measured within 30 kHz bandwidth at
fc = ± 4.3 MHz.
(1) Efficiency.
(2) Upper adjacent.
(3) Lower adjacent.
Fig 9.
DVB-T ACPR and power added efficiency at 202 MHz
019aaa410
32
60
ηD
(%)
G
(dB)
(1)
30
40
28
20
(2)
26
0
34
38
42
46
50
54
PL (dBm)
VDS = 50 V; IDq = 0.5 A; tp = 12 μs.
(1) Gain.
(2) Drain efficiency.
Fig 10. Pulse gain and drain efficiency at 202 MHz
Note that the peak power with flat gain tuning is up to 0.5 dB higher than with best ACPR
tuning. Linearity (evident with poorer ACPR and more gain expansion with power) and
efficiency are both significantly worse with flat gain tuning. A more suitable approach to
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174 MHz to 230 MHz DVB-T power amplifier with the BLF881
achieving flat gain than tuning the output is probably to use a simple gain slope network at
the amplifier input. A frequency-selective lossy network could also be used to improve
input return loss across the band.
The flat gain tuning was achieved with C8 = 2 × 68 pF (ATC 800B) mounted 33 mm from
the start of the 4 mm output microstrip (compared to 82 pF and 41 mm, for best ACPR
tuning) and C9 = 33 pF (compared to 30 pF for best ACPR tuning).
5. PCB and schematic
The PCB was designed to accommodate either the BLF881 or the BLF573, a 300 W
LDMOS RF power transistor designed for broadcast applications and industrial, scientific
and medical applications in the HF to 500 MHz band.
019aaa411
PCB is a Rogers 5880, height = 0.79 mm, copper thickness = 35 μm.
Fig 11. PCB layout
AN10945
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AN10945
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174 MHz to 230 MHz DVB-T power amplifier with the BLF881
Table 3.
Bill of Materials
Component
Description
Value
Remarks
C1, C21
capacitor; 100 V 5 % NPO; 0805
1 nF
ATC 800R
C2
capacitor; 100 V 5 % NPO; 0805
18 pF
ATC 100B
C3, C4, C5
capacitor; 100 V 5 % NPO; 0805
100 pF
-
C6, C7
capacitor; 500 V 5 % NPO
56 pF
-
C8
capacitor; 500 V 5 % NPO
82 pF
-
C9
capacitor; 500 V 5 % NPO
30 pF
-
C10, C31
capacitor; 500 V 5 % NPO
510 pF
-
C20, C25, C30, C34,
C37
capacitor; 250 V 5 % NPO; 1210
10 nF
-
C22, C27
capacitor; 25 V 10 % X7R; 1206
10 μF
-
C23, C26
capacitor; 50 V 10 % X7R; 0805
100 nF
-
C24
capacitor; 25 V 10 % X7R; 0805
1 μF
-
C32
capacitor; 100 V 10 % X7R; 1210
100 nF
-
C33
capacitor; 100 V 10 % X7S; 2220
10 μF
TDK C5750X7S2A106M
C35
capacitor; 100 V 10 % X7R; 1206
1 μF
TDK C3216X7R2A105K
C36
capacitor; 63 V aluminium electrolytic
470 μF
-
L1
inductor; 5t; air
18.5 nH
Coilcraft A05T
L2, L5
ferrite bead; 5 A
45 Ω at 100 MHz
Fair-Rite 2743019447
L3
inductor; 3t; 20 AWG; 3 mm; ID
-
-
L4
inductor; 4t; 20 AWG; 4 mm; ID
-
-
R1, R2
resistor; 5 %; 100 ppm; CF; 0805
2.2 Ω
-
E1, E2
tab; Faston; 0.25 inch
-
-
ferrite bead; 200 mA; 0805
1 k Ω at 100 MHz
-
C101, C102, C105
capacitor; 50 V 10 % X7R; 0805
100 nF
-
C106
capacitor; 100 V 5 % NPO; 0805
1 nF
-
C103, C104, C107
capacitor; 50 V 10 % X7R; 0805
1 μF
-
C108
capacitor; 100 V 10 % X7R; 1210
2.2 μF
-
D101
LED; green; 1206
-
-
D102
LED; red; 1206
-
-
U101
voltage regulator
-
Linear LT3010EMS8E
U102
dual comparator
-
Linear LT6700CS6-3
Q101
transistor NPN; 45 V; 100 mA; GP
-
NXP BC847B
U103
rail-rail opamp
-
National LM7321MF
R106
potentiometer; 5t cermet
200 Ω
-
R3, R4
resistor; 5 %; 100 ppm; CF; 2010
1Ω
positioned under L4
R112, R113, R117,
R118
resistor; 1 %; 100 ppm; CF; 0805
10 kΩ
-
R104, R114, R115
resistor; 1 %; 100 ppm; CF; 0805
1.1 kΩ
-
R105
resistor; 1 %; 100 ppm; CF; 0805
2 kΩ
-
RF circuit
Bias circuit
L101, L102
AN10945
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174 MHz to 230 MHz DVB-T power amplifier with the BLF881
Table 3.
Bill of Materials
Component
Description
Value
Remarks
R102, R103, R108
resistor; 1 %; 100 ppm; CF; 0805
432 Ω
-
R116
resistor; 1 %; 100 ppm; CF; 0805
52.3 kΩ
-
R109
resistor; 1 %; 100 ppm; CF; 0805
5.11 kΩ
-
R101
resistor; 1 %; 100 ppm; CF; 0805
0.0 Ω
-
R111
resistor; 1 %; 100 ppm; CF; 0805
88.7 kΩ
-
R110
resistor; 1 %; 100 ppm; CF; 0805
909 Ω
-
E101, E102
test point
-
-
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NXP Semiconductors
AN10945
Application note
VD
L101
BLM21BD102
VG
U101
LT3010EMS8E
IN
EN
1
5
2
+8V
OUT
ADJ
R116
52.3 kΩ
GND:4,9
C106
1 nF
C107
1 μF
R103
432 Ω
bias monitor/overdrive
E102
R115
1.1 kΩ
R102
432 Ω
C108
2.2 μF
R104
1.1 kΩ
R117
10 kΩ
R106
200 Ω
R105
2 kΩ
D101
HSMG-C150
green = power
R101
75 Ω
U103
LM7321MF
3
5
C101
100 nF
R108
R113
432 Ω
10 KΩ
R111(1)
88.7 kΩ
R109
5.1 kΩ
1
4
C102
100 nF
3
3
Q101
BC847B
5
R114(1)
1.1 kΩ
400 mV
C105(1)
100 nF
R112(1)
10 kΩ
ground
E101
C104
1 μF
D102(1)
HSMH-C150
red = overtemp
2 LT6700CS6-3
U102(1)
019aaa412
AN10945
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© NXP B.V. 2010. All rights reserved.
Fig 12. Bias circuit schematic
VGATE
6
4
(1) These components are optional.
1
2
1
2
R110
909 Ω
C103
1 μF
174 MHz to 230 MHz DVB-T power amplifier with the BLF881
Rev. 01 — 18 November 2010
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R118
10 kΩ
8
L102
BLM21BD102
AN10945
NXP Semiconductors
174 MHz to 230 MHz DVB-T power amplifier with the BLF881
6. Abbreviations
Table 4.
AN10945
Application note
Abbreviations
Acronym
Description
ACPR
Adjacent Channel Power Ratio
CCDF
Complementary Cumulative Distribution Function
DVB-T
Digital Video Broadcast - Terrestrial
LDMOS
Laterally Diffused Metal-Oxide Semiconductor
OFDM
Orthogonal Frequency Division Multiplex
PAE
Power Added Efficiency
PAR
Peak-to-Average power Ratio
PCB
Printed-Circuit Board
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174 MHz to 230 MHz DVB-T power amplifier with the BLF881
7. Legal information
7.1
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
7.2
Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
AN10945
Application note
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Evaluation products — This product is provided on an “as is” and “with all
faults” basis for evaluation purposes only. NXP Semiconductors, its affiliates
and their suppliers expressly disclaim all warranties, whether express, implied
or statutory, including but not limited to the implied warranties of
non-infringement, merchantability and fitness for a particular purpose. The
entire risk as to the quality, or arising out of the use or performance, of this
product remains with customer.
In no event shall NXP Semiconductors, its affiliates or their suppliers be liable
to customer for any special, indirect, consequential, punitive or incidental
damages (including without limitation damages for loss of business, business
interruption, loss of use, loss of data or information, and the like) arising out
the use of or inability to use the product, whether or not based on tort
(including negligence), strict liability, breach of contract, breach of warranty or
any other theory, even if advised of the possibility of such damages.
Notwithstanding any damages that customer might incur for any reason
whatsoever (including without limitation, all damages referenced above and
all direct or general damages), the entire liability of NXP Semiconductors, its
affiliates and their suppliers and customer’s exclusive remedy for all of the
foregoing shall be limited to actual damages incurred by customer based on
reasonable reliance up to the greater of the amount actually paid by customer
for the product or five dollars (US$5.00). The foregoing limitations, exclusions
and disclaimers shall apply to the maximum extent permitted by applicable
law, even if any remedy fails of its essential purpose.
7.3
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 18 November 2010
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174 MHz to 230 MHz DVB-T power amplifier with the BLF881
8. Contents
1
2
3
4
4.1
4.2
5
6
7
7.1
7.2
7.3
8
Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Test summary. . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Design methodology . . . . . . . . . . . . . . . . . . . . . 5
RF performance . . . . . . . . . . . . . . . . . . . . . . . . . 6
Best ACPR tuning. . . . . . . . . . . . . . . . . . . . . . . 6
Flat gain tuning . . . . . . . . . . . . . . . . . . . . . . . . . 9
PCB and schematic . . . . . . . . . . . . . . . . . . . . . 11
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Legal information. . . . . . . . . . . . . . . . . . . . . . . 16
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
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Date of release: 18 November 2010
Document identifier: AN10945