SO T2 3 PMV31XN N-channel TrenchMOS FET Rev. 2 — 30 November 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching Trench MOSFET technology Low threshold voltage 1.3 Applications Battery-powered motor control High-speed switching in set top box power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 150 °C - - 20 V ID drain current Tsp = 25 °C; VGS = 4.5 V; see Figure 2; see Figure 3 - - 5.9 A Ptot total power dissipation Tsp = 25 °C; see Figure 1 - - 2 W VGS = 2.5 V; ID = 1 A; Tj = 25 °C; see Figure 9; see Figure 10 - 44 53 mΩ VGS = 4.5 V; ID = 1.5 A; Tj = 25 °C; see Figure 9; see Figure 10 - 31 37 mΩ Static characteristics RDSon drain-source on-state resistance PMV31XN NXP Semiconductors N-channel TrenchMOS FET 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol D 3 G 1 2 S SOT23 (TO-236AB) 017aaa253 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMV31XN TO-236AB plastic surface-mounted package; 3 leads SOT23 4. Marking Table 4. Marking codes Type number Marking code[1] PMV31XN %M4 [1] % = placeholder for manufacturing site code 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 150 °C - 20 V Tj ≥ 25 °C; Tj ≤ 150 °C; RGS = 20 kΩ VDGR drain-gate voltage VGS gate-source voltage ID drain current - 20 V -12 12 V Tsp = 100 °C; VGS = 4.5 V; see Figure 2 - 3.75 A Tsp = 25 °C; VGS = 4.5 V; see Figure 2; see Figure 3 - 5.9 A IDM peak drain current Tsp = 25 °C; pulsed; tp ≤ 10 µs; see Figure 3 - 23.7 A Ptot total power dissipation Tsp = 25 °C; see Figure 1 - 2 W Tstg storage temperature -55 150 °C Tj junction temperature -55 150 °C - 1.7 A Source-drain diode IS source current PMV31XN Product data sheet Tsp = 25 °C All information provided in this document is subject to legal disclaimers. Rev. 2 — 30 November 2011 © NXP B.V. 2011. All rights reserved. 2 of 14 PMV31XN NXP Semiconductors N-channel TrenchMOS FET 03aa17 120 03aa25 120 Pder (%) Ider (%) 80 80 40 40 0 0 0 50 100 150 200 0 50 100 Tsp (°C) Fig 1. 150 200 Tsp (°C) Normalized total power dissipation as a function of solder point temperature Fig 2. Normalized continuous drain current as a function of solder point temperature 03al69 102 ID (A) Limit RDSon = VDS / ID tp = 10 μ s 10 100 μ s 1 ms 1 10 ms DC 100 ms 10-1 10-2 10-1 Fig 3. 1 10 102 VDS (V) Safe operating area; continuous and peak drain currents as a function of drain-source voltage PMV31XN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 30 November 2011 © NXP B.V. 2011. All rights reserved. 3 of 14 PMV31XN NXP Semiconductors N-channel TrenchMOS FET 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-sp) thermal resistance from junction to solder point see Figure 4 - - 60 K/W 03al68 102 Zth(j-sp) (K/W) δ = 0.5 0.2 10 0.1 0.05 P δ= tp T 0.02 1 10-4 Fig 4. t tp single pulse T 10-3 10-2 10-1 1 10 tp (s) 102 Transient thermal impedance from junction to solder point as a function of pulse duration PMV31XN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 30 November 2011 © NXP B.V. 2011. All rights reserved. 4 of 14 PMV31XN NXP Semiconductors N-channel TrenchMOS FET 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = -55 °C 18 - - V ID = 250 µA; VGS = 0 V; Tj = 25 °C 20 - - V VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = -55 °C; see Figure 8 - - 1.8 V ID = 1 mA; VDS = VGS; Tj = 150 °C; see Figure 8 0.35 - - V ID = 1 mA; VDS = VGS; Tj = 25 °C; see Figure 8 0.5 - 1.5 V IDSS drain leakage current VDS = 20 V; VGS = 0 V; Tj = 150 °C - - 100 µA VDS = 20 V; VGS = 0 V; Tj = 25 °C - - 1 µA IGSS gate leakage current VGS = 12 V; VDS = 0 V; Tj = 25 °C - 10 100 nA VGS = -12 V; VDS = 0 V; Tj = 25 °C - 10 100 nA VGS = 2.5 V; ID = 1 A; Tj = 25 °C; see Figure 9; see Figure 10 - 44 53 mΩ VGS = 4.5 V; ID = 1.5 A; Tj = 25 °C; see Figure 9; see Figure 10 - 31 37 mΩ ID = 6 A; VDS = 10 V; VGS = 4.5 V; Tj = 25 °C; see Figure 11 - 5.8 - nC - 1.4 - nC - 1.7 - nC - 410 - pF - 115 - pF - 80 - pF - 10 - ns RDSon drain-source on-state resistance Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time VDS = 20 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C; see Figure 12 VDS = 10 V; RL = 10 Ω; VGS = 4.5 V; RG(ext) = 6 Ω; Tj = 25 °C tr rise time - 15 - ns td(off) turn-off delay time - 25 - ns tf fall time - 12 - ns - 0.75 1.2 V Source-drain diode VSD source-drain voltage PMV31XN Product data sheet IS = 1.5 A; VGS = 0 V; Tj = 25 °C; see Figure 13 All information provided in this document is subject to legal disclaimers. Rev. 2 — 30 November 2011 © NXP B.V. 2011. All rights reserved. 5 of 14 PMV31XN NXP Semiconductors N-channel TrenchMOS FET 03al70 20 4.5 V 3.5 V ID (A) 03al72 20 3.1 V VDS > ID x RDSon ID (A) 2.9 V 15 15 2.5 V 10 10 2.1 V 5 5 Tj = 150 °C 25 °C VGS = 1.7 V 0 0 0 Fig 5. 0.2 0.4 0.6 0.8 1 VDS (V) Output characteristics: drain current as a function of drain-source voltage; typical values Fig 6. 03al83 10-3 1 2 3 V 4 GS (V) Transfer characteristics: drain current as a function of gate-source voltage; typical values 03al82 2 VGS (th) (V) ID (A) min 10 0 typ 1.5 max max -4 1 typ 0.5 min 10-5 10-6 0 0.5 1 1.5 VGS (V) 0 −60 2 0 60 120 180 Tj (°C) ID = 1 mA; VDS = VGS Fig 7. Sub-threshold drain current as a function of gate-source voltage PMV31XN Product data sheet Fig 8. Gate-source threshold voltage as a function of junction temperature All information provided in this document is subject to legal disclaimers. Rev. 2 — 30 November 2011 © NXP B.V. 2011. All rights reserved. 6 of 14 PMV31XN NXP Semiconductors N-channel TrenchMOS FET 03al71 80 VGS = 2.5 V Tj = 25 °C RDSon (mΩ) 03af18 2 a 60 1.5 2.9 V 3.1 V 40 1 3.5 V 4.5 V 0.5 20 0 -60 0 0 Fig 9. 5 10 15 20 ID (A) Drain-source on-state resistance as a function of drain current; typical values 017aaa395 5 0 60 120 Tj (°C) 180 Fig 10. Normalized drain-source on-state resistance factor as a function of junction temperature 03al74 103 VGS (V) C (pF) 4 Ciss 3 Coss 102 Crss 2 1 0 0 2 4 6 8 QG (nC) 10 10-1 1 10 VDS (V) 102 ID = 6 A; VDD = 10 V; Tj = 25 °C Fig 11. Gate-source voltage as a function of gate charge; typical values PMV31XN Product data sheet Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 30 November 2011 © NXP B.V. 2011. All rights reserved. 7 of 14 PMV31XN NXP Semiconductors N-channel TrenchMOS FET 017aaa376 20 IS (A) 15 10 5 (1) (2) 0 0 0.5 1.0 1.5 VSD (V) VDS > ID × RDSon (1) Tj = 25 °C (2) Tj = 150 °C Fig 13. Source current as a function of source-drain voltage; typical values PMV31XN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 30 November 2011 © NXP B.V. 2011. All rights reserved. 8 of 14 PMV31XN NXP Semiconductors N-channel TrenchMOS FET 8. Package outline Plastic surface-mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC JEITA TO-236AB EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 Fig 14. Package outline SOT23 (TO-236AB) PMV31XN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 30 November 2011 © NXP B.V. 2011. All rights reserved. 9 of 14 PMV31XN NXP Semiconductors N-channel TrenchMOS FET 9. Soldering 3.3 2.9 1.9 solder lands solder resist 3 2 1.7 solder paste occupied area 0.6 (3×) 0.7 (3×) Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig 15. Reflow soldering footprint for SOT23 (TO-236AB) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig 16. Wave soldering footprint for SOT23 (TO-236AB) PMV31XN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 30 November 2011 © NXP B.V. 2011. All rights reserved. 10 of 14 PMV31XN NXP Semiconductors N-channel TrenchMOS FET 10. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes PMV31XN v.2 20111130 Product data sheet - PMV31XN v.1 Modifications: PMV31XN v.1 PMV31XN Product data sheet • The format of this document has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • • • • • Legal texts have been adapted to the new company name where appropriate. 1 “Product profile”: updated 5 “Limiting values”: VDSR drain-source voltage redefined to VDGR drain-gate voltage 14 “Package outline SOT23 (TO-236AB)”: updated 9 “Soldering”: added 11 “Legal information”: updated 20030226 Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 2 — 30 November 2011 - © NXP B.V. 2011. All rights reserved. 11 of 14 PMV31XN NXP Semiconductors N-channel TrenchMOS FET 11. Legal information 11.1 Data sheet status Document status [1] [2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 11.2 Definitions Preview — The document is a preview version only. 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Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 2 — 30 November 2011 © NXP B.V. 2011. All rights reserved. 12 of 14 PMV31XN NXP Semiconductors N-channel TrenchMOS FET Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. 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In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. 12. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PMV31XN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 30 November 2011 © NXP B.V. 2011. All rights reserved. 13 of 14 PMV31XN NXP Semiconductors N-channel TrenchMOS FET 13. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2 Thermal characteristics . . . . . . . . . . . . . . . . . . .4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Contact information. . . . . . . . . . . . . . . . . . . . . .13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 30 November 2011 Document identifier: PMV31XN